Inventor · disambiguated record
Hae Wang Yang
Also filed as: YANG HAE WANG
3 granted patents·4 citations·filing 2007–2011
55Inventor score
Top patents by PatentIndex Score
3 records- 0166US7880263B2Method and resulting structure DRAM cell with selected inverse narrow width effectSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Feb 1, 2011·4 cites·19 claims
- 0249US7678644B2Method and resulting structure for DRAM cell and peripheral transistorSEMICONDUCTOR MFG INT SHANGHAI·Filed 2007·Granted Mar 16, 2010·0 cites·20 claims
- 0334US8338893B2Method and resulting structure DRAM cell with selected inverse narrow width effectYANG HAE WANG·Filed 2011·Granted Dec 25, 2012·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →