Inventor · disambiguated record
Frank Z. Custode
Also filed as: CUSTODE FRANK Z
16 granted patents·195 citations·filing 1978–1990
94Inventor score
Files withROCKWELL INTERNATIONAL CORP16
Top patents by PatentIndex Score
16 records- 0176US4231051AProcess for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structuresROCKWELL INTERNATIONAL CORP·Filed 1978·Granted Oct 28, 1980·22 cites·10 claims
- 0269US4404581AROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cellsROCKWELL INTERNATIONAL CORP·Filed 1980·Granted Sep 13, 1983·22 cites·5 claims
- 0363US4593453ATwo-level transistor structures and method utilizing minimal area thereforROCKWELL INTERNATIONAL CORP·Filed 1984·Granted Jun 10, 1986·18 cites·2 claims
- 0463US4406049AVery high density cells comprising a ROM and method of manufacturing sameROCKWELL INTERNATIONAL CORP·Filed 1982·Granted Sep 27, 1983·26 cites·1 claims
- 0552US5051805ASub-micron bipolar devices with sub-micron contactsROCKWELL INTERNATIONAL CORP·Filed 1990·Granted Sep 24, 1991·15 cites·3 claims
- 0651US4994407ARadiation hardened field oxides for NMOS and CMOS-bulk and process for formingROCKWELL INTERNATIONAL CORP·Filed 1988·Granted Feb 19, 1991·15 cites·7 claims
- 0749US4229755AFabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elementsROCKWELL INTERNATIONAL CORP·Filed 1978·Granted Oct 21, 1980·12 cites·10 claims
- 0846US4990983ARadiation hardened field oxides for NMOS and CMOS-bulk and process for formingROCKWELL INTERNATIONAL CORP·Filed 1987·Granted Feb 5, 1991·16 cites·6 claims
- 0942US5114874AMethod of making a sub-micron NMOS, PMOS and CMOS devices with methods for forming sub-micron contactsROCKWELL INTERNATIONAL CORP·Filed 1990·Granted May 19, 1992·9 cites·10 claims
- 1039US4697328AMethod of making hardened NMOS sub-micron field effect transistorsROCKWELL INTERNATIONAL CORP·Filed 1986·Granted Oct 6, 1987·9 cites·6 claims
- 1137US4947225ASub-micron devices with method for forming sub-micron contactsROCKWELL INTERNATIONAL CORP·Filed 1987·Granted Aug 7, 1990·6 cites·5 claims
- 1236US4749662ADiffused field CMOS-bulk processROCKWELL INTERNATIONAL CORP·Filed 1986·Granted Jun 7, 1988·7 cites·6 claims
- 1336US4694565AMethod of making hardened CMOS sub-micron field effect transistorsROCKWELL INTERNATIONAL CORP·Filed 1986·Granted Sep 22, 1987·8 cites·8 claims
- 1435US4419808AMethod of producing redundant ROM cellsROCKWELL INTERNATIONAL CORP·Filed 1982·Granted Dec 13, 1983·4 cites·1 claims
- 1533US4879583ADiffused field CMOS-bulk process and CMOS transistorsROCKWELL INTERNATIONAL CORP·Filed 1987·Granted Nov 7, 1989·5 cites·3 claims
- 1630US5114867ASub-micron bipolar devices with method for forming sub-micron contactsROCKWELL INTERNATIONAL CORP·Filed 1990·Granted May 19, 1992·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →