Inventor · disambiguated record
Been-Hon Lin
Also filed as: LIN BEEN-HON
2 granted patents·64 citations·filing 1997–1998
65Inventor score
Technology areasH10P
Files withTAIWAN SEMICONDUCTOR MFG2
Top patents by PatentIndex Score
2 records- 0169US6100202APre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 8, 2000·51 cites·12 claims
- 0243US6042887AProcess for forming a sausg inter metal dielectric layer by pre-coating the reactorTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 28, 2000·13 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →