Inventor · disambiguated record
Atman Zhao
Also filed as: ZHAO ATMAN
4 granted patents·11 citations·filing 2005–2008
68Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI4
Top patents by PatentIndex Score
4 records- 0168US7396693B2Multiple point gate oxide integrity test method and system for the manufacture of semiconductor integrated circuitsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted Jul 8, 2008·4 cites·12 claims
- 0267US7619435B2Method and system for derivation of breakdown voltage for MOS integrated circuit devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Nov 17, 2009·6 cites·12 claims
- 0356US7573285B2Multiple point gate oxide integrity test method and system for the manufacture of semiconductor integrated circuitsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Aug 11, 2009·1 cites·13 claims
- 0436US7462497B2Method and system for derivation of breakdown voltage for MOS integrated circuit devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted Dec 9, 2008·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Atman Zhao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →