Inventor · disambiguated record
Andrew Clark
Also filed as: CLARK ANDREW · CLARK ANDREW H · CLARK ANDREW W
68 granted patents·24 pending applications·443 citations·filing 1991–2023
98Inventor score
Top patents by PatentIndex Score
92 records- 0197US5235927AAutopilot systemNAUTECH LTD·Filed 1992·Granted Aug 17, 1993·68 cites·4 claims
- 0295US8796121B1Stress mitigating amorphous SiO2 interlayerDARGIS RYTIS·Filed 2013·Granted Aug 5, 2014·23 cites·13 claims
- 0394US8846504B1GaN on Si(100) substrate using epi-twistDARGIS RYTIS·Filed 2013·Granted Sep 30, 2014·21 cites·8 claims
- 0494US8501635B1Modification of REO by subsequent III-N EPI processCLARK ANDREW·Filed 2012·Granted Aug 6, 2013·20 cites·20 claims
- 0592US8633569B1AlN inter-layers in III-N material grown on REO/silicon substrateARKUN ERDEM·Filed 2013·Granted Jan 21, 2014·15 cites·17 claims
- 0692US8394194B1Single crystal reo buffer on amorphous SiOxDARGIS RYTIS·Filed 2012·Granted Mar 12, 2013·13 cites·9 claims
- 0792US6411638B1Coupled cavity anti-guided vertical-cavity surface-emitting laserHONEYWELL INC·Filed 1999·Granted Jun 25, 2002·95 cites·33 claims
- 0890US9142406B1III-N material grown on ErAlN buffer on Si substrateDARGIS RYTIS·Filed 2014·Granted Sep 22, 2015·13 cites·16 claims
- 0989US10075143B2Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitrideIQE PLC·Filed 2016·Granted Sep 11, 2018·6 cites·47 claims
- 1089US8748900B1Re-silicide gate electrode for III-N device on Si substrateTRANSLUCENT INC·Filed 2013·Granted Jun 10, 2014·10 cites·20 claims
- 1188US8878188B2REO gate dielectric for III-N device on Si substrateDARGIS RYTIS·Filed 2013·Granted Nov 4, 2014·9 cites·21 claims
- 1287US8823055B2REO/ALO/A1N template for III-N material growth on siliconARKUN ERDEM·Filed 2012·Granted Sep 2, 2014·8 cites·10 claims
- 1386US10605987B2Re-based integrated photonic and electronic layered structuresIQE PLC·Filed 2019·Granted Mar 31, 2020·4 cites·21 claims
- 1486US8680507B1A1N inter-layers in III-N material grown on DBR/silicon substrateARKUN ERDEM·Filed 2013·Granted Mar 25, 2014·9 cites·13 claims
- 1586US8636844B1Oxygen engineered single-crystal REO templateDARGIS RYTIS·Filed 2012·Granted Jan 28, 2014·7 cites·6 claims
- 1684US8623747B1Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devicesARKUN ERDEM·Filed 2012·Granted Jan 7, 2014·6 cites·17 claims
- 1784US8455756B2High efficiency solar cell using IIIB material transition layersLEBBY MICHAEL·Filed 2010·Granted Jun 4, 2013·4 cites·5 claims
- 1882US9674602B2Acoustic element for a speakerBOSE CORP·Filed 2014·Granted Jun 6, 2017·5 cites·6 claims
- 1982US9360565B2Radiation detector and fabrication processCLARK ANDREW·Filed 2010·Granted Jun 7, 2016·6 cites·7 claims
- 2079US8823025B1III-N material grown on AIO/AIN buffer on Si substrateARKUN ERDEM·Filed 2013·Granted Sep 2, 2014·4 cites·18 claims
- 2179US8794010B2Laser cooling of modified SOI waferWILLIAMS DAVID L·Filed 2010·Granted Aug 5, 2014·5 cites·24 claims
- 2279US8039736B2Photovoltaic up conversion and down conversion using rare earthsCLARK ANDREW·Filed 2009·Granted Oct 18, 2011·5 cites·15 claims
- 2378US11201451B2Porous distributed Bragg reflectors for laser applicationsIQE PLC·Filed 2019·Granted Dec 14, 2021·1 cites·21 claims
- 2478US8049100B2Multijunction rare earth solar cellTRANSLUCENT INC·Filed 2009·Granted Nov 1, 2011·7 cites·11 claims
- 2577US10855237B1Method for changing audio limiter settings under low alternating-current (AC) line voltage conditionBOSE CORP·Filed 2019·Granted Dec 1, 2020·2 cites·18 claims
- 2677US10566944B2Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitrideIQE PLC·Filed 2018·Granted Feb 18, 2020·2 cites·10 claims
- 2777US9917193B2III-N semiconductor layer on Si substrateDARGIS RYTIS·Filed 2016·Granted Mar 13, 2018·2 cites·5 claims
- 2876US11355340B2Semiconductor material having tunable permittivity and tunable thermal conductivityIQE PLC·Filed 2020·Granted Jun 7, 2022·1 cites·28 claims
- 2975US9596530B2Configurable speakerBOSE CORP·Filed 2013·Granted Mar 14, 2017·3 cites·18 claims
- 3075US8637763B2Solar cells with engineered spectral conversionLEBBY MICHAEL·Filed 2010·Granted Jan 28, 2014·1 cites·15 claims
- 3175US8039738B2Active rare earth tandem solar cellTRANSLUCENT INC·Filed 2009·Granted Oct 18, 2011·4 cites·15 claims
- 3274US10332857B2Rare earth pnictides for strain managementIQE PLC·Filed 2017·Granted Jun 25, 2019·1 cites·19 claims
- 3373US11063114B2III-N to rare earth transition in a semiconductor structureIQE PLC·Filed 2019·Granted Jul 13, 2021·1 cites·22 claims
- 3473US10128350B2Integrated epitaxial metal electrodesIQE PLC·Filed 2017·Granted Nov 13, 2018·1 cites·29 claims
- 3571US6678300B2Coupled cavity anti-guided vertical-cavity surface-emitting laserHONEYWELL INT INC·Filed 2002·Granted Jan 13, 2004·8 cites·26 claims
- 3670US8872308B2AlN cap grown on GaN/REO/silicon substrate structureARKUN ERDEM·Filed 2013·Granted Oct 28, 2014·2 cites·15 claims
- 3769US8679953B1Crystalline REO template on silicon substrateCLARK ANDREW·Filed 2012·Granted Mar 25, 2014·2 cites·4 claims
- 3868US9105471B2Rare earth oxy-nitride buffered III-N on siliconCLARK ANDREW·Filed 2011·Granted Aug 11, 2015·2 cites·12 claims
- 3967US8178841B2Monolithically integrated IR imaging using rare-earth up conversion materialsCLARK ANDREW·Filed 2009·Granted May 15, 2012·1 cites·16 claims
- 4066US12382690B2Structure and method using a single crystalline bixbyite oxide layer in a orientationIQE PLC·Filed 2022·Granted Aug 5, 2025·0 cites·15 claims
- 4165US9236249B2III-N material grown on REN epitaxial buffer on Si substrateDARGIS RYTIS·Filed 2013·Granted Jan 12, 2016·1 cites·23 claims
- 4265US8039737B2Passive rare earth tandem solar cellTRANSLUCENT INC·Filed 2009·Granted Oct 18, 2011·1 cites·15 claims
- 4364US9496132B2Nucleation of III-N on REO templatesTRANSLUCENT INC·Filed 2013·Granted Nov 15, 2016·1 cites·17 claims
- 4464US8835955B2IIIOxNy on single crystal SOI substrate and III n growth platformARKUN ERDEM·Filed 2011·Granted Sep 16, 2014·1 cites·18 claims
- 4564US8455881B2Ge quantum dots for dislocation engineering of III-N on siliconARKUN ERDEM·Filed 2011·Granted Jun 4, 2013·1 cites·7 claims
- 4661US2022254631A1Porous rf switch for reduced crosstalkIQE PLC·Filed 2022·Application pending·0 cites
- 4760US10825912B2Integrated epitaxial metal electrodesIQE PLC·Filed 2018·Granted Nov 3, 2020·0 cites·39 claims
- 4860US2012085399A1REO-Ge Multi-Junction Solar CellLEBBY MICHAEL S·Filed 2011·Application pending·0 cites
- 4959US11133389B2Pnictide nanocomposite structure for lattice stabilizationIQE PLC·Filed 2020·Granted Sep 28, 2021·0 cites·18 claims
- 5059US10615141B2Pnictide buffer structures and devices for GaN base applicationsIQE PLC·Filed 2017·Granted Apr 7, 2020·0 cites·15 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →