Assignee
DARGIS RYTIS
US·12 granted patents·6 pending applications·89 citations·filing 2011–2017
Top patents by PatentIndex Score
18 records- 0195US8796121B1Stress mitigating amorphous SiO2 interlayerDARGIS RYTIS·Filed 2013·Granted Aug 5, 2014·23 cites·13 claims
- 0294US8846504B1GaN on Si(100) substrate using epi-twistDARGIS RYTIS·Filed 2013·Granted Sep 30, 2014·21 cites·8 claims
- 0392US8394194B1Single crystal reo buffer on amorphous SiOxDARGIS RYTIS·Filed 2012·Granted Mar 12, 2013·13 cites·9 claims
- 0490US9142406B1III-N material grown on ErAlN buffer on Si substrateDARGIS RYTIS·Filed 2014·Granted Sep 22, 2015·13 cites·16 claims
- 0588US8878188B2REO gate dielectric for III-N device on Si substrateDARGIS RYTIS·Filed 2013·Granted Nov 4, 2014·9 cites·21 claims
- 0686US8636844B1Oxygen engineered single-crystal REO templateDARGIS RYTIS·Filed 2012·Granted Jan 28, 2014·7 cites·6 claims
- 0777US9917193B2III-N semiconductor layer on Si substrateDARGIS RYTIS·Filed 2016·Granted Mar 13, 2018·2 cites·5 claims
- 0865US9236249B2III-N material grown on REN epitaxial buffer on Si substrateDARGIS RYTIS·Filed 2013·Granted Jan 12, 2016·1 cites·23 claims
- 0955US9460917B2Method of growing III-N semiconductor layer on Si substrateDARGIS RYTIS·Filed 2014·Granted Oct 4, 2016·0 cites·15 claims
- 1055US2012183767A1Hexagonal reo template buffer for iii-n layers on siliconDARGIS RYTIS·Filed 2011·Application pending·0 cites
- 1150US2013334536A1SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOxDARGIS RYTIS·Filed 2013·Application pending·0 cites
- 1249US9139934B2REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrateDARGIS RYTIS·Filed 2014·Granted Sep 22, 2015·0 cites·30 claims
- 1348US9443939B2Strain compensated REO buffer for III-N on siliconDARGIS RYTIS·Filed 2015·Granted Sep 13, 2016·0 cites·14 claims
- 1448US9431526B2Heterostructure with carrier concentration enhanced by single crystal REO induced strainsDARGIS RYTIS·Filed 2014·Granted Aug 30, 2016·0 cites·29 claims
- 1548US2013099357A1Strain compensated reo buffer for iii-n on siliconDARGIS RYTIS·Filed 2011·Application pending·0 cites
- 1644US2016181093A1Iii-n epitaxy on multilayer buffer with protective top layerDARGIS RYTIS·Filed 2014·Application pending·0 cites
- 1739US2012280276A1Single Crystal Ge On SiDARGIS RYTIS·Filed 2012·Application pending·0 cites
- 1837US2019122885A1Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layersDARGIS RYTIS·Filed 2017·Application pending·0 cites
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