Inventor · disambiguated record
Kurt Rottner
Also filed as: ROTTNER KURT
10 granted patents·393 citations·filing 1990–1997
92Inventor score
Top patents by PatentIndex Score
10 records- 0188US6040237AFabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edgeABB RESEARCH LTD·Filed 1997·Granted Mar 21, 2000·89 cites·9 claims
- 0287US6104043ASchottky diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted Aug 15, 2000·94 cites·10 claims
- 0385US5710059AMethod for producing a semiconductor device having a semiconductor layer of SiC by implantingABB RESEARCH LTD·Filed 1996·Granted Jan 20, 1998·86 cites·14 claims
- 0480US6002159ASiC semiconductor device comprising a pn junction with a voltage absorbing edgeABB RESEARCH LTD·Filed 1996·Granted Dec 14, 1999·54 cites·12 claims
- 0560US6703294B1Method for producing a region doped with boron in a SiC-layerCREE INC·Filed 1996·Granted Mar 9, 2004·24 cites·5 claims
- 0651US5705406AMethod for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation techniqueABB RESEARCH LTD·Filed 1996·Granted Jan 6, 1998·15 cites·15 claims
- 0750US5902117APN-diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted May 11, 1999·13 cites·15 claims
- 0837US5674765AMethod for producing a semiconductor device by the use of an implanting stepABB RESEARCH LTD·Filed 1996·Granted Oct 7, 1997·6 cites·14 claims
- 0936US5849620AMethod for producing a semiconductor device comprising an implantation stepABB RESEARCH LTD·Filed 1995·Granted Dec 15, 1998·6 cites·18 claims
- 1032US5053727ACircuit coupling an oscillator to an electrical loadSIEMENS AG·Filed 1990·Granted Oct 1, 1991·6 cites·5 claims
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