Inventor · disambiguated record
Benjamin Damilano
Also filed as: DAMILANO BENJAMIN · DAMILANO BENJAMIN GERARD · DAMILANO BENJAMIN GERARD PIERR
9 granted patents·4 pending applications·83 citations·filing 2000–2025
84Inventor score
Files withCENTRE NAT RECH SCIENT8COMMISSARIAT ENERGIE ATOMIQUE3MASSIES JEAN1SOITEC SILICON ON INSULATOR1
Top patents by PatentIndex Score
13 records- 0194US10103195B2Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabricationCENTRE NAT RECH SCIENT·Filed 2015·Granted Oct 16, 2018·17 cites·10 claims
- 0283US8470618B2Method of manufacturing a light-emitting diode having electrically active and passive portionsMASSIES JEAN·Filed 2010·Granted Jun 25, 2013·6 cites·24 claims
- 0376US6445009B1Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackingsCENTRE NAT RECH SCIENT·Filed 2000·Granted Sep 3, 2002·33 cites·28 claims
- 0475US6730943B2Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination deviceCENTRE NAT RECH SCIENT·Filed 2001·Granted May 4, 2004·27 cites·17 claims
- 0572US2025318322A1Method for manufacturing a substrate comprising a relaxed ingan layer and substrate thus obtained for the resumption of growth of a led structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2025·Application pending·0 cites
- 0665US12342661B2Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jun 24, 2025·0 cites·10 claims
- 0755US12328975B2Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaNSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jun 10, 2025·0 cites·5 claims
- 0848US2009101934A1Monolithic White Light-Emitting DiodeCENTRE NAT RECH SCIENT·Filed 2007·Application pending·0 cites
- 0943US2016043272A1Monolithic light-emitting deviceCENTRE NAT RECH SCIENT·Filed 2014·Application pending·0 cites
- 1040US11047799B2Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque maskCENTRE NAT RECH SCIENT·Filed 2017·Granted Jun 29, 2021·0 cites·15 claims
- 1138US2020203556A1Method of manufacturing optoelectronic structures provided with coplanar light emitting diodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Application pending·0 cites
- 1234US11217663B2Semiconductor heterostructures with wurtzite-type structure on ZnO substrateCENTRE NAT RECH SCIENT·Filed 2017·Granted Jan 4, 2022·0 cites·12 claims
- 1332US11085130B2Method for producing nanostructuresCENTRE NAT RECH SCIENT·Filed 2016·Granted Aug 10, 2021·0 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when Benjamin Damilano files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →