Inventor · disambiguated record
Cheng-Yeh Shih
Also filed as: SHIH CHENG-YEH
21 granted patents·605 citations·filing 1994–2001
96Inventor score
Top patents by PatentIndex Score
21 records- 0192US6100118AFabrication of metal fuse design for redundancy technology having a guard ringTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 8, 2000·116 cites·10 claims
- 0286US6080637AShallow trench isolation technology to eliminate a kink effectTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 27, 2000·88 cites·25 claims
- 0385US6037213AMethod for making cylinder-shaped capacitors for dynamic random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·55 cites·20 claims
- 0483US6307213B1Method for making a fuse structure for improved repaired yields on semiconductor memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 23, 2001·31 cites·5 claims
- 0577US6100116AMethod to form a protected metal fuseTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 8, 2000·51 cites·9 claims
- 0674US6121073AMethod for making a fuse structure for improved repaired yields on semiconductor memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 19, 2000·40 cites·23 claims
- 0772US6323118B1Borderless dual damascene contactTAIWAN SEMICONDUCTOR FOR MFG C·Filed 1998·Granted Nov 27, 2001·48 cites·23 claims
- 0870US6143617AComposite capacitor electrode for a DRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·26 cites·18 claims
- 0960US6825520B1Capacitor with a roughened silicide layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 30, 2004·8 cites·2 claims
- 1060US6479402B1Method to improve adhesion of molding compound by providing an oxygen rich film over the top surface of a passivation layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 12, 2002·10 cites·25 claims
- 1160US5521119APost treatment of tungsten etching backTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted May 28, 1996·29 cites·20 claims
- 1256US6204134B1Method for fabricating a self aligned contact plugTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 20, 2001·16 cites·17 claims
- 1353US6670690B1Method of making an improved field oxide isolation structure for semiconductor integrated circuits having higher field oxide threshold voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 30, 2003·3 cites·3 claims
- 1453US6268281B1Method to form self-aligned contacts with polysilicon plugsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 31, 2001·18 cites·17 claims
- 1546US5707895AThin film transistor performance enhancement by water plasma treatmentTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 13, 1998·13 cites·17 claims
- 1644US6348409B1Self aligned contact plug technologyTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 19, 2002·11 cites·18 claims
- 1744US5834346AProcedure for eliminating bubbles formed during reflow of a dielectric layer over an LDD structureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Nov 10, 1998·12 cites·17 claims
- 1842US6054368AMethod of making an improved field oxide isolation structure for semiconductor integrated circuits having higher field oxide threshold voltagesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Apr 25, 2000·8 cites·24 claims
- 1941US5953606AMethod for manufacturing a TFT SRAM memory device with improved performanceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 14, 1999·7 cites·13 claims
- 2041US5943569AMethod for making improved capacitors on dynamic random access memory having increased capacitance, longer refresh times, and improved yieldsTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 24, 1999·9 cites·22 claims
- 2139US6078087ASRAM memory device with improved performanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 20, 2000·6 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →