Inventor · disambiguated record
Mizue Kitada
Also filed as: KITADA MIZUE
29 granted patents·2 pending applications·179 citations·filing 2001–2023
95Inventor score
Files withSHINDENGEN ELECTRIC MFG31
Top patents by PatentIndex Score
31 records- 0189US6573559B2Transistor and method of manufacturing the sameSHINDENGEN ELECTRIC MFG·Filed 2001·Granted Jun 3, 2003·47 cites·17 claims
- 0286US6404032B1Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2001·Granted Jun 11, 2002·42 cites·4 claims
- 0382US10439056B2Power semiconductor device and method of manufacturing power semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2016·Granted Oct 8, 2019·4 cites·11 claims
- 0476US6841825B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Jan 11, 2005·20 cites·10 claims
- 0575US6768138B1Diode elementSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Jul 27, 2004·26 cites·6 claims
- 0673US10818496B2Semiconductor device having crystal defects and method of manufacturing the semiconductor device having crystal defectsSHINDENGEN ELECTRIC MFG·Filed 2019·Granted Oct 27, 2020·1 cites·17 claims
- 0772US6706615B2Method of manufacturing a transistorSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Mar 16, 2004·15 cites·14 claims
- 0868US11843048B2Method of manufacturing MOSFET having a semiconductor base substrate with a super junction structureSHINDENGEN ELECTRIC MFG·Filed 2022·Granted Dec 12, 2023·0 cites·6 claims
- 0964US7196376B2Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltageSHINDENGEN ELECTRIC MFG·Filed 2005·Granted Mar 27, 2007·3 cites·12 claims
- 1064US6906355B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Jun 14, 2005·11 cites·22 claims
- 1162US10468480B1MOSFET and power conversion circuitSHINDENGEN ELECTRIC MFG·Filed 2016·Granted Nov 5, 2019·1 cites·5 claims
- 1259US7365391B2Semiconductor device and method for manufacturing thereofSHINDENGEN ELECTRIC MFG·Filed 2006·Granted Apr 29, 2008·2 cites·10 claims
- 1355US2025176229A1Semiconductor device and method for manufacturing semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2023·Application pending·0 cites
- 1453US11342452B2MOSFET, having a semiconductor base substrate with a super junction structure, method of manufacturing the MOSFET, and power conversion circuit having the MOSFETSHINDENGEN ELECTRIC MFG·Filed 2017·Granted May 24, 2022·0 cites·10 claims
- 1546US10475917B2MosfetSHINDENGEN ELECTRIC MFG·Filed 2018·Granted Nov 12, 2019·0 cites·8 claims
- 1644US9859414B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2014·Granted Jan 2, 2018·0 cites·7 claims
- 1744US7855413B2Diode with low resistance and high breakdown voltageSHINDENGEN ELECTRIC MFG·Filed 2007·Granted Dec 21, 2010·0 cites·3 claims
- 1844US7135718B2Diode device and transistor deviceSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Nov 14, 2006·3 cites·14 claims
- 1944US6876034B2Semiconductor device having active groovesSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Apr 5, 2005·2 cites·12 claims
- 2042US10411141B2Semiconductor device and method of manufacturing semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Sep 10, 2019·0 cites·16 claims
- 2141US7230298B2Transistor having narrow trench filled with epitaxially-grown filling material free of voidsSHINDENGEN ELECTRIC MFG·Filed 2002·Granted Jun 12, 2007·2 cites·9 claims
- 2240US10700191B2MOSFET and power conversion circuitSHINDENGEN ELECTRIC MFG·Filed 2016·Granted Jun 30, 2020·0 cites·12 claims
- 2339US10468518B2Power semiconductor device having a first and a second conductive-type columnar regions formed alternately with each other and method of manufacturing the power semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Nov 5, 2019·0 cites·8 claims
- 2438US11626479B2Semiconductor device and method of manufacturing semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2020·Granted Apr 11, 2023·0 cites·19 claims
- 2538US7208375B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2004·Granted Apr 24, 2007·0 cites·5 claims
- 2637US11005354B2Power conversion circuitSHINDENGEN ELECTRIC MFG·Filed 2017·Granted May 11, 2021·0 cites·22 claims
- 2737US10290734B2MOSFET and power conversion circuitSHINDENGEN ELECTRIC MFG·Filed 2017·Granted May 14, 2019·0 cites·11 claims
- 2837US7573109B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2006·Granted Aug 11, 2009·0 cites·14 claims
- 2936US10872952B1MOSFET and power conversion circuitSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Dec 22, 2020·0 cites·17 claims
- 3036US7282764B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2006·Granted Oct 16, 2007·0 cites·11 claims
- 3134US2019221664A1Mosfet and power conversion circuitSHINDENGEN ELECTRIC MFG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →