Inventor · disambiguated record
Young Hun Han
Also filed as: HAN YOUNG · HAN YOUNG HUN
9 granted patents·18 pending applications·40 citations·filing 2005–2025
84Inventor score
Top patents by PatentIndex Score
27 records- 0192US9711682B2Multiple quantum well light emitting device with multi-layer barrier structureLG INNOTEK CO LTD·Filed 2013·Granted Jul 18, 2017·11 cites·17 claims
- 0286US10770622B2Light-emitting element and light-emitting element package comprising sameLG INNOTEK CO LTD·Filed 2016·Granted Sep 8, 2020·3 cites·20 claims
- 0376US7860289B2Method of dental microscopic procedureYOO BEN·Filed 2009·Granted Dec 28, 2010·9 cites·22 claims
- 0476US7433505B2Method of dental microscopic procedureYOO BEN·Filed 2005·Granted Oct 7, 2008·10 cites·1 claims
- 0571US8871612B2Method for forming a cleaved facet of semiconductor deviceHAN YOUNG HUN·Filed 2012·Granted Oct 28, 2014·3 cites·15 claims
- 0662US7620228B2Method of dental microscopic procedureSIMJI CO LTD·Filed 2008·Granted Nov 17, 2009·4 cites·17 claims
- 0756US2025351631A1Epitaxial die and chip die for semiconductor light-emitting device, and manufacturing method thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 0856US2025294925A1Epitaxial die for semiconductor light-emitting device, semiconductor light-emitting device including same, and manufacturing methods thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 0955US2025311346A1Epitaxial wafer for gan hemt with enhanced electrical insulation and manufacturing method thereofWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1054US2025324644A1High-quality gan hemt power semiconductor epitaxy wafer with 3d nitride structure and manufacturing method of the sameWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1154US2025324643A1Gan hemt epitaxial wafer based on aln thick film and manufacturing method of the sameWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1254US2025324631A1Method for manufacturing gan hemt power semiconductor epitaxial wafers with high-quality gan channel region through growth temperature modulationWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1353US2025203899A1Method for manufacturing group 3 nitride semiconductor template using double seed layerWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 1453US2025285860A1Method for manufacturing semiconductor template having group iii metal polar surfaceWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 1552US2025287729A1Method for manufacturing microdisplay panelWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 1652US2025285859A1Method for manufacturing group 3 nitride semiconductor templateWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 1752US2025285922A1Method for manufacturing group iii nitride power semiconductor device using epitaxial diesWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 1852US2025287730A1Method for manufacturing semiconductor device using semiconductor growth templateWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 1951US9406838B2Light-emitting deviceLG INNOTEK CO LTD·Filed 2013·Granted Aug 2, 2016·0 cites·20 claims
- 2051US2025294839A1Method for manufacturing group 3 nitride semiconductor template and semiconductor template manufactured therebyWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2151US2025294928A1Epitaxial die enabling easy detection of electrical defects, semiconductor light-emitting device using same, and manufacturing methods thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2251US2025294921A1Method for manufacturing semiconductor light-emitting device having color conversion technology applied theretoWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2351US2025293025A1Method for manufacturing group iii nitride semiconductor template and semiconductor template manufactured therebyWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2451US2025287747A1Epitaxial die for semiconductor light-emitting device, semiconductor light-emitting device including same, and manufacturing methods thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2544US10510925B2Light-emitting device and lighting system comprising sameLG INNOTEK CO LTD·Filed 2016·Granted Dec 17, 2019·0 cites·18 claims
- 2639US2012138994A1Light emitting device, light emitting device package, and light unitKANG DAE SUNG·Filed 2012·Application pending·0 cites
- 2735US8912528B2Method for forming a cleaved facet of semiconductor deviceHAN YOUNG HUN·Filed 2012·Granted Dec 16, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →