Inventor · disambiguated record
Ji-Hyoung Yoo
Also filed as: YOO JI H · YOO JI-HYOUNG
27 granted patents·7 pending applications·195 citations·filing 1992–2020
95Inventor score
Files withMONOLITHIC POWER SYSTEMS INC19YOO JI-HYOUNG5MICREL INC3SAMSUNG ELECTRONICS CO LTD3CHENGDU MONOLITHIC POWER SYS2
Top patents by PatentIndex Score
34 records- 0192US11049957B1LDMOS device with sinker linkMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Jun 29, 2021·6 cites·7 claims
- 0292US10090409B2Method for fabricating LDMOS with self-aligned bodyMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Oct 2, 2018·13 cites·7 claims
- 0391US9502251B1Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing processMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Nov 22, 2016·8 cites·20 claims
- 0487US9941171B1Method for fabricating LDMOS with reduced source regionMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Apr 10, 2018·5 cites·6 claims
- 0587US9893170B1Manufacturing method of selectively etched DMOS body pickupMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Feb 13, 2018·5 cites·15 claims
- 0687US7265041B2Gate layouts for transistorsMICREL INC·Filed 2005·Granted Sep 4, 2007·15 cites·12 claims
- 0786US9893146B1Lateral DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Feb 13, 2018·5 cites·12 claims
- 0881US9159795B2High side DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Oct 13, 2015·7 cites·8 claims
- 0981US7635621B2Lateral double-diffused metal oxide semiconductor (LDMOS) device with an enhanced drift region that has an improved Ron area productMICREL INC·Filed 2006·Granted Dec 22, 2009·13 cites·20 claims
- 1079US5965919ASemiconductor device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 12, 1999·44 cites·17 claims
- 1177US9935176B1Method for fabricating LDMOS using CMP technologyMONOLITHIC POWER SYSTEMS INC·Filed 2016·Granted Apr 3, 2018·3 cites·13 claims
- 1275US9087774B2LDMOS device with short channel and associated fabrication methodMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Jul 21, 2015·3 cites·15 claims
- 1371US10090200B2Bipolar junction semiconductor device and method for manufacturing thereofCHENGDU MONOLITHIC POWER SYS·Filed 2016·Granted Oct 2, 2018·2 cites·21 claims
- 1471US9219146B2High voltage PMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Dec 22, 2015·3 cites·18 claims
- 1571US8749014B2Schottky diodes with dual guard ring regions and associated methodsYOO JI-HYOUNG·Filed 2011·Granted Jun 10, 2014·3 cites·20 claims
- 1668US5196356AMethod for manufacturing BICMOS devicesSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Mar 23, 1993·32 cites·8 claims
- 1766US8809988B2Low leakage and/or low turn-on voltage Schottky diodeYOO JI-HYOUNG·Filed 2009·Granted Aug 19, 2014·2 cites·16 claims
- 1866US8772867B2High voltage high side DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2012·Granted Jul 8, 2014·2 cites·15 claims
- 1963US8916439B2Method for forming dual gate insulation layers and semiconductor device having dual gate insulation layersYOO JI-HYOUNG·Filed 2012·Granted Dec 23, 2014·2 cites·20 claims
- 2061US8198679B2High voltage NMOS with low on resistance and associated methods of makingYOO JI-HYOUNG·Filed 2009·Granted Jun 12, 2012·2 cites·5 claims
- 2159US8916913B2High voltage semiconductor device and the associated method of manufacturingYOO JI-HYOUNG·Filed 2012·Granted Dec 23, 2014·1 cites·6 claims
- 2253US5840604AMethods of forming MOS transistors having hot-carrier suppression electrodesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 24, 1998·19 cites·20 claims
- 2350US11069777B1Manufacturing method of self-aligned DMOS body pickupMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Jul 20, 2021·0 cites·18 claims
- 2450US2018374949A1Method for fabricating ldmos with self-aligned bodyMONOLITHIC POWER SYSTEMS INC·Filed 2018·Application pending·0 cites
- 2550US2015001620A1Ldmos device with improved avalanche energy and associated fabricating methodMONOLITHIC POWER SYSTEMS INC·Filed 2013·Application pending·0 cites
- 2648US11205722B2Lateral DMOS having reduced lateral sizeCHENGDU MONOLITHIC POWER SYS·Filed 2020·Granted Dec 21, 2021·0 cites·18 claims
- 2745US2015162441A1Ldmos device with improved avalanche energy and associated fabricating methodMONOLITHIC POWER SYSTEMS INC·Filed 2015·Application pending·0 cites
- 2845US2021359124A1Schottky contact region for hole injection suppressionMONOLITHIC POWER SYSTEMS INC·Filed 2020·Application pending·0 cites
- 2944US9583561B2Schottky diodes with mesh style region and associated methodsMONOLITHIC POWER SYSTEMS INC·Filed 2015·Granted Feb 28, 2017·0 cites·16 claims
- 3041US2021193805A1Lateral transistor with lateral conductive field plate over a field plate positioning layerMONOLITHIC POWER SYSTEMS INC·Filed 2019·Application pending·0 cites
- 3134US2006065891A1Zener zap diode structure compatible with tungsten plug technologyMCCORMACK STEVE·Filed 2004·Application pending·0 cites
- 3232US2017170312A1High voltage dmos and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2015·Application pending·0 cites
- 3331US6838350B2Triply implanted complementary bipolar transistorsMICREL INC·Filed 2003·Granted Jan 4, 2005·0 cites·14 claims
- 3428US6114208AMethod for fabricating complementary MOS transistorSAMSUN ELECTRONICS CO LTD·Filed 1998·Granted Sep 5, 2000·0 cites·13 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →