Inventor · disambiguated record
Alexander H. Nickel
Also filed as: NICKEL ALEXANDER · NICKEL ALEXANDER H
36 granted patents·3 pending applications·381 citations·filing 2001–2018
97Inventor score
Top patents by PatentIndex Score
39 records- 0196US6515368B1Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copperADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 4, 2003·130 cites·10 claims
- 0293US7776682B1Ordered porosity to direct memory element formationSPANSION LLC·Filed 2005·Granted Aug 17, 2010·32 cites·20 claims
- 0389US6624075B1Method of reducing electromigration in a copper line by Zinc-Doping of a copper surface from an electroplated copper-zinc alloy thin film and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 23, 2003·46 cites·10 claims
- 0487US8035153B2Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applicationsSPANSION LLC·Filed 2010·Granted Oct 11, 2011·9 cites·27 claims
- 0587US6660633B1Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 9, 2003·36 cites·10 claims
- 0686US7534732B1Semiconductor devices with copper interconnects and composite silicon nitride capping layersSPANSION LLC·Filed 2006·Granted May 19, 2009·12 cites·7 claims
- 0784US8415256B1Gap-filling with uniform propertiesNICKEL ALEXANDER·Filed 2010·Granted Apr 9, 2013·9 cites·14 claims
- 0877US7884030B1Gap-filling with uniform propertiesADVANCED MICRO DEVICES INC AND SPANSION LLC·Filed 2006·Granted Feb 8, 2011·7 cites·14 claims
- 0976US7307027B1Void free interlayer dielectricADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 11, 2007·5 cites·11 claims
- 1075US8735960B2High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performanceTRAN MINH Q·Filed 2008·Granted May 27, 2014·8 cites·16 claims
- 1175US7985674B2SiH4 soak for low hydrogen SiN deposition to improve flash memory device performanceSPANSION LLC·Filed 2008·Granted Jul 26, 2011·4 cites·8 claims
- 1275US6936925B1Semiconductor device having copper lines with reduced electromigration using an electroplated interim copper-zinc alloy film on a copper surfaceADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 30, 2005·15 cites·19 claims
- 1375US6717236B1Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 6, 2004·22 cites·18 claims
- 1475US6479879B1Low defect organic BARC coating in a semiconductor structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 12, 2002·17 cites·10 claims
- 1571US9324927B2Semiconductor light emitting device with thick metal layersKONINKL PHILIPS NV·Filed 2012·Granted Apr 26, 2016·1 cites·17 claims
- 1671US8309455B2SiH4 soak for low hydrogen SiN deposition to improve flash memory device performanceKIM SUNG JIN·Filed 2011·Granted Nov 13, 2012·2 cites·12 claims
- 1771US7732276B2Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applicationsSPANSION LLC·Filed 2007·Granted Jun 8, 2010·4 cites·20 claims
- 1866US9219209B2P-N separation metal fill for flip chip LEDsLEI JIPU·Filed 2012·Granted Dec 22, 2015·2 cites·20 claims
- 1965US10490719B2Die bond pad design to enable different electrical configurationsLUMILEDS HOLDING BV·Filed 2016·Granted Nov 26, 2019·1 cites·16 claims
- 2062US10020431B2Sealed semiconductor light emitting deviceKONINKLIJKE PHILIPS NV·Filed 2013·Granted Jul 10, 2018·1 cites·24 claims
- 2161US8026169B2Cu annealing for improved data retention in flash memory devicesADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 27, 2011·2 cites·6 claims
- 2260US9484513B2Semiconductor light emitting device with thick metal layersKONINKLIJKE PHILIPS NV·Filed 2016·Granted Nov 1, 2016·0 cites·19 claims
- 2359US9406857B2Chip scale light emitting device with metal pillars in a molding compound formed at wafer levelKONINKLIJKE PHILIPS NV·Filed 2013·Granted Aug 2, 2016·1 cites·12 claims
- 2456US10170675B2P—N separation metal fill for flip chip LEDsLUMILEDS LLC·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
- 2555US8017870B2Fastening device for a lineBOSCH GMBH ROBERT·Filed 2007·Granted Sep 13, 2011·1 cites·15 claims
- 2655US6528424B1Method of electroplating a copper-zinc alloy thin film on a copper surface using a chemical solutionADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·5 cites·10 claims
- 2754US7102156B1Memory elements using organic active layerSPANSION LLC ADVANCED MICRO DE·Filed 2004·Granted Sep 5, 2006·6 cites·15 claims
- 2852US9722161B2P-n separation metal fill for flip chip LEDsKONINKLIJKE PHILIPS NV·Filed 2015·Granted Aug 1, 2017·0 cites·19 claims
- 2951US6811671B1Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 2, 2004·3 cites·18 claims
- 3051US2018323353A1Sealed semiconductor light emitting deviceLUMILEDS LLC·Filed 2018·Application pending·0 cites
- 3150US8384146B2Methods for forming a memory cell having a top oxide spacerSPANSION LLC·Filed 2012·Granted Feb 26, 2013·0 cites·13 claims
- 3249US9425325B2Electrically programmable and eraseable memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Aug 23, 2016·0 cites·8 claims
- 3347US8633074B2Electrically programmable and erasable memory device and method of fabrication thereofTRAN MINH Q·Filed 2008·Granted Jan 21, 2014·0 cites·16 claims
- 3447US8202779B2Methods for forming a memory cell having a top oxide spacerFANG SHENQING·Filed 2010·Granted Jun 19, 2012·0 cites·7 claims
- 3543US9935069B2Reducing solder pad topology differences by planarizationLUMILEDS LLC·Filed 2014·Granted Apr 3, 2018·0 cites·11 claims
- 3643US9608016B2Method of separating a wafer of semiconductor devicesKONINKLIJKE PHILIPS NV·Filed 2013·Granted Mar 28, 2017·0 cites·20 claims
- 3742US2008096364A1Conformal liner for gap-fillingADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 3841US2008153236A1Flash memory devices and methods for fabricating the sameCHENG NING·Filed 2006·Application pending·0 cites
- 3940US8202810B2Low-H plasma treatment with N2 anneal for electronic memory devicesNICKEL ALEXANDER H·Filed 2008·Granted Jun 19, 2012·0 cites·9 claims
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