Inventor · disambiguated record
Mikiya Ichimura
Also filed as: ICHIMURA MIKIYA
38 granted patents·6 pending applications·68 citations·filing 2008–2022
96Inventor score
Top patents by PatentIndex Score
44 records- 0189US11309455B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Apr 19, 2022·2 cites·14 claims
- 0289US10410859B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Sep 10, 2019·4 cites·20 claims
- 0388US9284911B2Engine combustion chamber structure, and inner wall structure of through channelNGK INSULATORS LTD·Filed 2014·Granted Mar 15, 2016·5 cites·15 claims
- 0484US8648351B2Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Granted Feb 11, 2014·6 cites·4 claims
- 0583US11088299B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Aug 10, 2021·1 cites·27 claims
- 0683US11011678B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted May 18, 2021·1 cites·15 claims
- 0783US9090993B2Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrateMIYOSHI MAKOTO·Filed 2012·Granted Jul 28, 2015·6 cites·6 claims
- 0881US9627568B2Photovoltaic elementNGK INSULATORS LTD·Filed 2015·Granted Apr 18, 2017·2 cites·16 claims
- 0981US8378386B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceNGK INSULATORS LTD·Filed 2010·Granted Feb 19, 2013·6 cites·13 claims
- 1080US10770552B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2020·Granted Sep 8, 2020·1 cites·8 claims
- 1179US9024325B2Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor elementNGK INSULATORS LTD·Filed 2013·Granted May 5, 2015·4 cites·18 claims
- 1278US11611017B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Mar 21, 2023·1 cites·14 claims
- 1378US8946723B2Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Granted Feb 3, 2015·4 cites·16 claims
- 1478US8471265B2Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereofMIYOSHI MAKOTO·Filed 2012·Granted Jun 25, 2013·4 cites·20 claims
- 1578US8415690B2Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor elementMIYOSHI MAKOTO·Filed 2012·Granted Apr 9, 2013·4 cites·29 claims
- 1678US8410552B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Apr 2, 2013·5 cites·13 claims
- 1776US8025728B2Method for manufacturing single crystal of nitrideNGK INSULATORS LTD·Filed 2008·Granted Sep 27, 2011·2 cites·7 claims
- 1875US8853829B2Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor deviceNGK INSULATORS LTD·Filed 2013·Granted Oct 7, 2014·3 cites·15 claims
- 1972US10629688B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Apr 21, 2020·0 cites·12 claims
- 2069US8860084B2Epitaxial substrate for semiconductor device, semiconductor device, method of manufacturing epitaxial substrate for semiconductor device, and method of manufacturing semiconductor deviceNGK INSULATORS LTD·Filed 2013·Granted Oct 14, 2014·2 cites·18 claims
- 2169US8853735B2Epitaxial substrate for semiconductor device and semiconductor deviceNGK INSULATORS LTD·Filed 2012·Granted Oct 7, 2014·2 cites·10 claims
- 2268US9882042B2Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrateNGK INSULATORS LTD·Filed 2015·Granted Jan 30, 2018·1 cites·2 claims
- 2361US7670430B2Method of recovering sodium metal from fluxNGK INSULATORS LTD·Filed 2008·Granted Mar 2, 2010·0 cites·4 claims
- 2460US10580646B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 2560US10418239B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Sep 17, 2019·0 cites·8 claims
- 2659US11555257B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Jan 17, 2023·0 cites·15 claims
- 2759US10804432B2Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Oct 13, 2020·0 cites·13 claims
- 2857US10734548B2Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Aug 4, 2020·0 cites·13 claims
- 2957US9382641B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceICHIMURA MIKIYA·Filed 2010·Granted Jul 5, 2016·1 cites·16 claims
- 3057US8853828B2Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor deviceSUMIYA SHIGEAKI·Filed 2012·Granted Oct 7, 2014·1 cites·20 claims
- 3156US2023215969A9Method for producing group 13 element nitride crystal layer, and seed crystal substrateNGK INSULATORS LTD·Filed 2022·Application pending·0 cites
- 3255US10347755B2Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrateNGK INSULATORS LTD·Filed 2016·Granted Jul 9, 2019·0 cites·2 claims
- 3350US7988784B2Method for manufacturing III metal nitride single crystalNGK INSULATORS LTD·Filed 2010·Granted Aug 2, 2011·0 cites·2 claims
- 3449US2014352646A1Heat-Insulating Member and Structure of Combustion Chamber for EngineNGK INSULATORS LTD·Filed 2014·Application pending·0 cites
- 3548US8506705B2Method for manufacturing nitride single crystalICHIMURA MIKIYA·Filed 2009·Granted Aug 13, 2013·0 cites·7 claims
- 3647US10128406B2GaN template substrateNGK INSULATORS LTD·Filed 2016·Granted Nov 13, 2018·0 cites·6 claims
- 3746US10332958B2Supporting substrate for composite substrate and composite substrateNGK INSULATORS LTD·Filed 2015·Granted Jun 25, 2019·0 cites·11 claims
- 3846US2015040879A1Structure of combustion chamber for engine and inner wall structure of flow pathNGK INSULATORS LTD·Filed 2014·Application pending·0 cites
- 3944US10332975B2Epitaxial substrate for semiconductor device and method for manufacturing sameNGK INSULATORS LTD·Filed 2017·Granted Jun 25, 2019·0 cites·8 claims
- 4044US8969880B2Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Granted Mar 3, 2015·0 cites·23 claims
- 4142US8598626B2Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structureMIYOSHI MAKOTO·Filed 2010·Granted Dec 3, 2013·0 cites·7 claims
- 4241US2013020583A1Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Application pending·0 cites
- 4341US2013026486A1Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Application pending·0 cites
- 4438US2012168771A1Semiconductor element, hemt element, and method of manufacturing semiconductor elementMIYOSHI MAKOTO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →