Inventor · disambiguated record
Li Wang
Also filed as: WANG LI · WANG LI K · WANG LI-KARN
26 granted patents·20 pending applications·184 citations·filing 2002–2024
95Inventor score
Top patents by PatentIndex Score
46 records- 0197US8574951B1Process of manufacturing an interdigitated back-contact solar cellNAT UNIV TSING HUA·Filed 2013·Granted Nov 5, 2013·31 cites·13 claims
- 0288US7758695B2Method for fabricating metal substrates with high-quality surfacesLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jul 20, 2010·11 cites·28 claims
- 0388US7741632B2InGaAIN light-emitting device containing carbon-based substrate and method for making the sameLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jun 22, 2010·24 cites·20 claims
- 0487US8426325B2Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrateWANG LI·Filed 2011·Granted Apr 23, 2013·5 cites·10 claims
- 0586US8222063B2Method for fabricating robust light-emitting diodesWANG LI·Filed 2008·Granted Jul 17, 2012·13 cites·8 claims
- 0684US7615420B2Method for manufacturing indium gallium aluminium nitride thin film on silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Nov 10, 2009·10 cites·19 claims
- 0782US8435816B2Method for fabricating InGaAlN light emitting device on a combined substrateXIONG CHUANBING·Filed 2008·Granted May 7, 2013·17 cites·18 claims
- 0882US8361880B2Semiconductor light-emitting device with metal support substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Jan 29, 2013·11 cites·11 claims
- 0977US7943942B2Semiconductor light-emitting device with double-sided passivationLATTICE POWER JIANGXI CORP·Filed 2008·Granted May 17, 2011·6 cites·20 claims
- 1077US7692205B2Semiconductor light-emitting deviceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 6, 2010·8 cites·6 claims
- 1177US6829397B2Dual fiber bragg grating strain sensor systemUNIV TSINGHUA·Filed 2002·Granted Dec 7, 2004·22 cites·28 claims
- 1276US7829359B2Method for fabricating highly reflective ohmic contact in light-emitting devicesLATTICE POWER JIANGXI CORP·Filed 2008·Granted Nov 9, 2010·7 cites·11 claims
- 1370US8383438B2Method for fabricating InGaAIN light-emitting diodes with a metal substrateLATTICE POWER JIANGXI CORP·Filed 2008·Granted Feb 26, 2013·4 cites·16 claims
- 1468US7705348B2Semiconductor light-emitting device with electrode for N-polar InGaAIN surfaceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 27, 2010·3 cites·9 claims
- 1568US2014073081A1Solar Cell Having Selective EmitterNAT UNIV TSING HUA·Filed 2013·Application pending·0 cites
- 1666US8288193B2Method of manufacturing selective emitter solar cellWU YUNG-HSIEN·Filed 2010·Granted Oct 16, 2012·2 cites·27 claims
- 1765US7888779B2Method of fabrication InGaAIN film and light-emitting device on a silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 15, 2011·3 cites·24 claims
- 1864US7919784B2Semiconductor light-emitting device and method for making sameLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 5, 2011·2 cites·11 claims
- 1963US2013048069A1Solar Cell Having Selective EmitterWANG LI-KARN·Filed 2012·Application pending·0 cites
- 2062US8044416B2Method for fabricating high-power light-emitting diode arraysLATTICE POWER JIANGXI CORP·Filed 2008·Granted Oct 25, 2011·2 cites·7 claims
- 2161US2015207019A1Method for Fabricating Crystalline Silicon Solar Cell Having Passivation Layer and Local Rear ContactsNAT UNIV TSING HUA·Filed 2014·Application pending·0 cites
- 2260US2025339044A1Blood pressure and heart rate measuring device, protective structure, and blood pressure and heart rate calculating method required by a blood pressure and heart rate measuring deviceMICRO NANO DEV CO LTD·Filed 2024·Application pending·0 cites
- 2359US8354665B2Semiconductor light-emitting devices for generating arbitrary colorLATTICE POWER JIANGXI CORP·Filed 2008·Granted Jan 15, 2013·2 cites·14 claims
- 2459US8053757B2Gallium nitride light-emitting device with ultra-high reverse breakdown voltageLATTICE POWER JIANGXI CORP·Filed 2007·Granted Nov 8, 2011·1 cites·27 claims
- 2555US2011056548A1Wafer-Based Solar Cell with Deeply Etched StructureWANG LI-KARN·Filed 2009·Application pending·0 cites
- 2651US2011133158A1Method for fabricating ingan-based multi-quantum well layersLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2750US2008261403A1Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrateLATTICE POWER JIANGXI CORP·Filed 2007·Application pending·0 cites
- 2848US2013122641A1Method of Fabricating Buried Contacts of Solar Cell with Curved TrenchesHSIEH FANG-CHI·Filed 2012·Application pending·0 cites
- 2947US2012222731A1Heterojunction Solar Cell Having Amorphous Silicon LayerHSIEH FANG-CHI·Filed 2011·Application pending·0 cites
- 3046US8461029B2Method for fabricating InGaN-based multi-quantum well layersJIANG FENGYI·Filed 2012·Granted Jun 11, 2013·0 cites·11 claims
- 3146US7977663B2Semiconductor light-emitting device with a highly reflective ohmic-electrodeLATTICE POWER JIANGXI CORP·Filed 2008·Granted Jul 12, 2011·0 cites·16 claims
- 3246US2011140081A1Method for fabricating semiconductor light-emitting device with double-sided passivationLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 3345US2011147704A1Semiconductor light-emitting device with passivation layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 3445US2014071788A1Mixing impeller having channel-shaped vanesWANG LI·Filed 2013·Application pending·0 cites
- 3545US2011147705A1Semiconductor light-emitting device with silicone protective layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 3645US2011253972A1LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILMLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 3744US2021215675A1Device for continuous measurement of cardiac activityThe Hospital for Sick Chicken·Filed 2019·Application pending·0 cites
- 3843US2011133159A1Semiconductor light-emitting device with passivation in p-type layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 3940US8431936B2Method for fabricating a p-type semiconductor structureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·12 claims
- 4040US8431475B2Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperatureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·18 claims
- 4140US7902556B2Method for fabricating high-quality semiconductor light-emitting devices on silicon substratesLATTICE POWER JIANGXI CORP·Filed 2006·Granted Mar 8, 2011·0 cites·7 claims
- 4240US2015015430A1Mobile Device Signal Interference Emitter and Control Method ThereofWANG LI K·Filed 2013·Application pending·0 cites
- 4340US2011298005A1Method for fabricating an n-type semiconductor material using silane as a precursorJIANG FENGYI·Filed 2007·Application pending·0 cites
- 4439US8384100B2InGaAIN light-emitting device and manufacturing method thereofLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 26, 2013·0 cites·9 claims
- 4536US2009321952A1Wire on wire stitch bonding in a semiconductor deviceLIANG XINGZHI·Filed 2008·Application pending·0 cites
- 4636US2009321501A1Method of fabricating wire on wire stitch bonding in a semiconductor deviceLIANG XINGZHI·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →