Inventor · disambiguated record
Yuichi Nakashima
Also filed as: NAKASHIMA YUICHI
13 granted patents·1 pending application·309 citations·filing 1989–2007
93Inventor score
Top patents by PatentIndex Score
14 records- 0193US5051948AContent addressable memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 24, 1991·81 cites·21 claims
- 0292US7268434B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Sep 11, 2007·28 cites·18 claims
- 0390US5101250AElectrically programmable non-volatile memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 31, 1992·99 cites·13 claims
- 0474US6617666B2Semiconductor device with capacitor and process for manufacturing the deviceTOSHIBA KK·Filed 2002·Granted Sep 9, 2003·14 cites·13 claims
- 0571US7242094B2Semiconductor device having capacitor formed in multilayer wiring structureTOSHIBA KK·Filed 2003·Granted Jul 10, 2007·15 cites·8 claims
- 0661US5231041AManufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gateMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 27, 1993·22 cites·4 claims
- 0759US6864137B2MIM capacitor with diffusion barrierTOSHIBA KK·Filed 2003·Granted Mar 8, 2005·5 cites·13 claims
- 0850US7042041B2Semiconductor deviceTOSHIBA KK·Filed 2004·Granted May 9, 2006·4 cites·25 claims
- 0948US2007228573A1Semiconductor device having capacitor formed in multilayer wiring structureMATSUNAGA TAKESHI·Filed 2007·Application pending·0 cites
- 1044US5877067AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1997·Granted Mar 2, 1999·14 cites·11 claims
- 1141US6004840AMethod of fabricating a semiconductor device comprising a MOS portion and a bipolar portionTOSHIBA KK·Filed 1996·Granted Dec 21, 1999·9 cites·15 claims
- 1236US5604371ASemiconductor device with an insulation film having an end covered by a conductive filmTOSHIBA KK·Filed 1995·Granted Feb 18, 1997·6 cites·14 claims
- 1336US5204540AResin sealed semiconductor device for use in testing and evaluation method of stress due to resin sealMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 20, 1993·9 cites·13 claims
- 1430US5187558AStress reduction structure for a resin sealed semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 16, 1993·3 cites·1 claims
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