Inventor · disambiguated record
Leonard C. Feldman
Also filed as: FELDMAN LEONARD · FELDMAN LEONARD C · FELDMAN LEONARD CECIL
21 granted patents·2 pending applications·570 citations·filing 1982–2018
96Inventor score
Top patents by PatentIndex Score
23 records- 0192US5068868AVertical cavity surface emitting lasers with electrically conducting mirrorsAT & T BELL LAB·Filed 1990·Granted Nov 26, 1991·83 cites·20 claims
- 0290US5249195AErbium doped optical devicesAT & T BELL LAB·Filed 1992·Granted Sep 28, 1993·76 cites·28 claims
- 0385US6939756B1Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defectsUNIV AUBURN·Filed 2001·Granted Sep 6, 2005·36 cites·15 claims
- 0485US4529455AMethod for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxyAT & T BELL LAB·Filed 1983·Granted Jul 16, 1985·60 cites·18 claims
- 0583US5308796AFabrication of electronic devices by electroless plating of copper onto a metal silicideAT & T BELL LAB·Filed 1993·Granted May 3, 1994·76 cites·9 claims
- 0683US4393311AMethod and apparatus for surface characterization and process control utilizing radiation from desorbed particlesBELL TELEPHONE LABOR INC·Filed 1982·Granted Jul 12, 1983·53 cites·43 claims
- 0779US9117817B2Semiconductor devices including polar insulation layer capped by non-polar insulation layerWILLIAMS JOHN R·Filed 2013·Granted Aug 25, 2015·4 cites·19 claims
- 0877US7891875B1Tear-resistive container for dispensing materialsFELDMAN LEONARD·Filed 2005·Granted Feb 22, 2011·10 cites·6 claims
- 0976US7235438B2Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defectsUNIV AUBURN·Filed 2005·Granted Jun 26, 2007·5 cites·16 claims
- 1073US7727340B2Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defectsUNIV VANDERBILT·Filed 2007·Granted Jun 1, 2010·4 cites·11 claims
- 1169US5904523AProcess for device fabrication in which a layer of oxynitride is formed at low temperaturesLUCENT TECHNOLOGIES INC·Filed 1997·Granted May 18, 1999·40 cites·5 claims
- 1264US5334306AMetallized paths on diamond surfacesAT & T BELL LAB·Filed 1992·Granted Aug 2, 1994·36 cites·16 claims
- 1362USD396550SPair of metatarsal padsPROFESSIONAL PRODUCT RES INC·Filed 1997·Granted Aug 4, 1998·16 cites·1 claims
- 1459US6572580B2Set depth nail notcher with patch system and method for treating nail fungusPROFOOT INC·Filed 2001·Granted Jun 3, 2003·21 cites·35 claims
- 1558US4861393ASemiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxyAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Aug 29, 1989·24 cites·12 claims
- 1650US9362367B2Semiconductor devices including polar insulation layer capped by non-polar insulation layerUNIV AUBURN·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 1747US11248904B2Systems and methods for real time measurement of surface curvature and thermal expansion of small samplesUNIV RUTGERS·Filed 2018·Granted Feb 15, 2022·0 cites·20 claims
- 1845US2005103713A1Devices with small-scale channels and the fabrication thereof by etchingFiled 2004·Application pending·0 cites
- 1942US5532510AReverse side etching for producing layers with strain variationAT & T CORP·Filed 1994·Granted Jul 2, 1996·12 cites·15 claims
- 2036US5500391AMethod for making a semiconductor device including diffusion controlAT & T CORP·Filed 1994·Granted Mar 19, 1996·9 cites·5 claims
- 2135US2005023156A1Nanostructured material transport devices and their fabrication by application of molecular coatings to nanoscale channelsFiled 2003·Application pending·0 cites
- 2229US6287276B1Set depth nail notcher and method for treating nail fungusPROFOOT INC·Filed 1998·Granted Sep 11, 2001·0 cites·30 claims
- 2329US6264628B1Set depth nail notcher and method for treating nail fungusPROFOOT INC·Filed 1999·Granted Jul 24, 2001·5 cites·48 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →