Inventor · disambiguated record
Qizhi Liu
Also filed as: LIU QIZHI
197 granted patents·16 pending applications·958 citations·filing 1998–2024
99Inventor score
Files withIBM103GLOBALFOUNDRIES INC46GLOBALFOUNDRIES US INC18GLOBALFOUNDRIES SG PTE LTD6CAMILLO-CASTILLO RENATA5
Top patents by PatentIndex Score
213 records- 0198US9349793B2Semiconductor structure with airgapIBM·Filed 2014·Granted May 24, 2016·33 cites·16 claims
- 0297US9059252B1Silicon waveguide on bulk silicon substrate and methods of formingIBM·Filed 2014·Granted Jun 16, 2015·37 cites·19 claims
- 0396US11145725B2Heterojunction bipolar transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 12, 2021·4 cites·20 claims
- 0495US11579360B2Optical antenna with reflective material for photonic integrated circuit and methods to form sameGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0595US9847408B1Fabrication of integrated circuit structures for bipolor transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·11 cites·11 claims
- 0695US7563714B2Low resistance and inductance backside through vias and methods of fabricating sameIBM·Filed 2006·Granted Jul 21, 2009·35 cites·10 claims
- 0794US9093478B1Integrated circuit structure with bulk silicon FinFET and methods of formingIBM·Filed 2014·Granted Jul 28, 2015·14 cites·13 claims
- 0893US11063139B2Heterojunction bipolar transistors with airgap isolationGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 13, 2021·3 cites·20 claims
- 0993US8592876B2Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structuresDING HANYI·Filed 2012·Granted Nov 26, 2013·9 cites·9 claims
- 1092US9646993B2Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of formingIBM·Filed 2015·Granted May 9, 2017·7 cites·8 claims
- 1192US8536012B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesCAMILLO-CASTILLO RENATA·Filed 2011·Granted Sep 17, 2013·13 cites·15 claims
- 1292US7119416B1Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2005·Granted Oct 10, 2006·21 cites·6 claims
- 1391US10217852B1Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic baseGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·6 cites·20 claims
- 1491US10014397B1Bipolar junction transistors with a combined vertical-lateral architectureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·6 cites·16 claims
- 1591US9355972B2Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonatorIBM·Filed 2014·Granted May 31, 2016·8 cites·20 claims
- 1690US9633894B2Semiconductor structure with airgapIBM·Filed 2015·Granted Apr 25, 2017·4 cites·18 claims
- 1790US7851923B2Low resistance and inductance backside through vias and methods of fabricating sameIBM·Filed 2009·Granted Dec 14, 2010·16 cites·15 claims
- 1889US10038063B2Tunable breakdown voltage RF FET devicesIBM·Filed 2014·Granted Jul 31, 2018·6 cites·15 claims
- 1989US9917005B2Semiconductor structure with airgapIBM·Filed 2017·Granted Mar 13, 2018·3 cites·9 claims
- 2089US9726547B2Microbolometer devices in CMOS and BiCMOS technologiesIBM·Filed 2014·Granted Aug 8, 2017·13 cites·20 claims
- 2189US9240448B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2015·Granted Jan 19, 2016·5 cites·9 claims
- 2289US8796149B1Collector-up bipolar junction transistors in BiCMOS technologyIBM·Filed 2013·Granted Aug 5, 2014·8 cites·10 claims
- 2388US11362201B1Heterojunction bipolar transistors with undercut extrinsic base regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 2488US10535551B2Lateral PiN diodes and schottky diodesGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 14, 2020·4 cites·18 claims
- 2588US9608096B1Implementing stress in a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·6 cites·19 claims
- 2688US9029229B2Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regionsIBM·Filed 2013·Granted May 12, 2015·10 cites·13 claims
- 2788US8415763B2Tunable semiconductor deviceHARAME DAVID LOUIS·Filed 2011·Granted Apr 9, 2013·13 cites·17 claims
- 2888US7253096B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2005·Granted Aug 7, 2007·11 cites·7 claims
- 2988US6936910B2BiCMOS technology on SOI substratesIBM·Filed 2004·Granted Aug 30, 2005·48 cites·29 claims
- 3087US11719895B1Spot-size converters with angled facetsGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 8, 2023·1 cites·20 claims
- 3187US11016055B2Sensors with a front-end-of-line solution-receiving cavityGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted May 25, 2021·6 cites·20 claims
- 3287US10367083B2Compact device structures for a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 30, 2019·5 cites·12 claims
- 3387US10211087B2Semiconductor structure with airgapIBM·Filed 2017·Granted Feb 19, 2019·2 cites·13 claims
- 3487US9570564B2Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitanceGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 14, 2017·8 cites·18 claims
- 3587US7904273B2In-line depth measurement for thru silicon viaIBM·Filed 2009·Granted Mar 8, 2011·11 cites·20 claims
- 3687US7776704B2Method to build self-aligned NPN in advanced BiCMOS technologyIBM·Filed 2007·Granted Aug 17, 2010·12 cites·23 claims
- 3787US7709338B2BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devicesIBM·Filed 2006·Granted May 4, 2010·14 cites·8 claims
- 3887US6271127B1Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materialsCONEXANT SYSTEMS INC·Filed 1999·Granted Aug 7, 2001·101 cites·20 claims
- 3986US10312356B1Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
- 4086US9653477B2Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of formingIBM·Filed 2014·Granted May 16, 2017·6 cites·14 claims
- 4186US9224841B2Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a method of forming the semiconductor finsIBM·Filed 2014·Granted Dec 29, 2015·7 cites·20 claims
- 4286US9093491B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2012·Granted Jul 28, 2015·7 cites·13 claims
- 4386US6888221B1BICMOS technology on SIMOX wafersIBM·Filed 2004·Granted May 3, 2005·37 cites·30 claims
- 4485US10777668B2Bipolar junction transistors with a self-aligned emitter and baseGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 15, 2020·4 cites·18 claims
- 4585US10431654B2Extrinsic base doping for bipolar junction transistorsIBM·Filed 2015·Granted Oct 1, 2019·3 cites·12 claims
- 4685US9721949B1Method of forming super steep retrograde wells on FinFETGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·3 cites·13 claims
- 4785US9666475B2Semiconductor structure with airgapIBM·Filed 2016·Granted May 30, 2017·2 cites·11 claims
- 4885US9553145B2Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thicknessGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 24, 2017·5 cites·14 claims
- 4985US8786051B2Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitanceADKISSON JAMES W·Filed 2012·Granted Jul 22, 2014·7 cites·16 claims
- 5084US9202900B2Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technologyIBM·Filed 2014·Granted Dec 1, 2015·5 cites·7 claims
Showing the top 50 of 213 patent records by PatentIndex Score.
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