Inventor · disambiguated record
Renata Camillo-Castillo
Also filed as: CAMILLO-CASTILLO RENATA · CAMILLO-CASTILLO RENATA A
57 granted patents·6 pending applications·758 citations·filing 2008–2022
98Inventor score
Files withGLOBALFOUNDRIES INC25IBM22CAMILLO-CASTILLO RENATA8CAMILLO-CASTILLO RENATA A3GLOBALFOUNDRIES US INC2
Top patents by PatentIndex Score
63 records- 0199US9324846B1Field plate in heterojunction bipolar transistor with improved break-down voltageIBM·Filed 2015·Granted Apr 26, 2016·522 cites·20 claims
- 0296US9368608B1Heterojunction bipolar transistor with improved performance and breakdown voltageGLOBALFOUNDARIES INC·Filed 2015·Granted Jun 14, 2016·26 cites·20 claims
- 0395US9245951B1Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 26, 2016·20 cites·20 claims
- 0495US9224858B1Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFETIBM·Filed 2014·Granted Dec 29, 2015·20 cites·20 claims
- 0593US9825157B1Heterojunction bipolar transistor with stress componentGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 21, 2017·9 cites·15 claims
- 0693US9761525B1Multiple back gate transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·10 cites·19 claims
- 0793US9722057B2Bipolar junction transistors with a buried dielectric region in the active device regionGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 1, 2017·9 cites·20 claims
- 0892US9159817B2Heterojunction bipolar transistors with an airgap between the extrinsic base and collectorIBM·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 0992US8536012B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesCAMILLO-CASTILLO RENATA·Filed 2011·Granted Sep 17, 2013·13 cites·15 claims
- 1091US10014397B1Bipolar junction transistors with a combined vertical-lateral architectureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·6 cites·16 claims
- 1188US9608096B1Implementing stress in a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·6 cites·19 claims
- 1288US9318551B2Trench isolation structures and methods for bipolar junction transistorsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 19, 2016·7 cites·13 claims
- 1387US10367083B2Compact device structures for a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 30, 2019·5 cites·12 claims
- 1487US9070734B2Heterojunction bipolar transistors with reduced parasitic capacitanceIBM·Filed 2014·Granted Jun 30, 2015·7 cites·11 claims
- 1585US10431654B2Extrinsic base doping for bipolar junction transistorsIBM·Filed 2015·Granted Oct 1, 2019·3 cites·12 claims
- 1685US9721949B1Method of forming super steep retrograde wells on FinFETGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·3 cites·13 claims
- 1785US8598660B2Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltageCAMILLO-CASTILLO RENATA·Filed 2011·Granted Dec 3, 2013·7 cites·11 claims
- 1884US8810005B1Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up regionIBM·Filed 2013·Granted Aug 19, 2014·7 cites·12 claims
- 1983US10211090B2Transistor with an airgap for reduced base-emitter capacitance and method of forming the transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 19, 2019·4 cites·18 claims
- 2083US8716837B2Bipolar junction transistors with a link region connecting the intrinsic and extrinsic basesIBM·Filed 2013·Granted May 6, 2014·5 cites·20 claims
- 2183US8405186B2Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structureCAMILLO-CASTILLO RENATA·Filed 2010·Granted Mar 26, 2013·7 cites·17 claims
- 2282US9653566B2Bipolar junction transistors with an air gap in the shallow trench isolationGLOBALFOUNDRIES INC·Filed 2015·Granted May 16, 2017·3 cites·19 claims
- 2380US9111986B2Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic baseIBM·Filed 2014·Granted Aug 18, 2015·4 cites·10 claims
- 2480US8735986B2Forming structures on resistive substratesBOTULA ALAN B·Filed 2011·Granted May 27, 2014·4 cites·18 claims
- 2579US9583569B2Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 28, 2017·2 cites·20 claims
- 2679US8946861B2Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up regionIBM·Filed 2013·Granted Feb 3, 2015·5 cites·12 claims
- 2778US9496377B2Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic baseGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 15, 2016·2 cites·8 claims
- 2878US8232156B2Vertical heterojunction bipolar transistors with reduced base-collector junction capacitanceCAMILLO-CASTILLO RENATA·Filed 2010·Granted Jul 31, 2012·4 cites·19 claims
- 2977US10164101B1Transistor with improved channel mobilityGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·2 cites·17 claims
- 3076US9231074B2Bipolar junction transistors with an air gap in the shallow trench isolationGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 5, 2016·3 cites·11 claims
- 3174US8586423B2Silicon controlled rectifier with stress-enhanced adjustable trigger voltageCAMILLO-CASTILLO RENATA·Filed 2011·Granted Nov 19, 2013·3 cites·16 claims
- 3274US8338863B2Vertical heterojunction bipolar transistors with reduced base-collector junction capacitanceCAMILLO-CASTILLO RENATA·Filed 2012·Granted Dec 25, 2012·3 cites·10 claims
- 3373US10446644B2Device structures for a silicon-on-insulator substrate with a high-resistance handle waferGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 15, 2019·2 cites·17 claims
- 3469US10964796B2Heterojunction bipolar transistors with stress material for improved mobilityGLOBALFOUNDRIES US INC·Filed 2017·Granted Mar 30, 2021·1 cites·19 claims
- 3569US8957456B1Heterojunction bipolar transistors with reduced parasitic capacitanceIBM·Filed 2013·Granted Feb 17, 2015·2 cites·10 claims
- 3666US11876123B2Heterojunction bipolar transistors with stress material for improved mobilityGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 3766US9059138B2Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structureCAMILLO-CASTILLO RENATA·Filed 2012·Granted Jun 16, 2015·2 cites·20 claims
- 3865US9859382B2Integrated CMOS wafersGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 2, 2018·1 cites·20 claims
- 3964US11152467B2Extrinsic base doping for bipolar junction transistorsIBM·Filed 2019·Granted Oct 19, 2021·0 cites·8 claims
- 4064US10784346B2Extrinsic base doping for bipolar junction transistorsIBM·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 4164US8975146B2Trench isolation structures and methods for bipolar junction transistorsIBM·Filed 2013·Granted Mar 10, 2015·1 cites·17 claims
- 4264US8946799B2Silicon controlled rectifier with stress-enhanced adjustable trigger voltageIBM·Filed 2013·Granted Feb 3, 2015·1 cites·18 claims
- 4364US8916446B2Bipolar junction transistor with multiple emitter fingersCAMILLO-CASTILLO RENATA·Filed 2011·Granted Dec 23, 2014·1 cites·14 claims
- 4463US9034712B2Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltageIBM·Filed 2013·Granted May 19, 2015·1 cites·11 claims
- 4561US8603889B2Integrated circuit structure having air-gap trench isolation and related design structureCAMILLO-CASTILLO RENATA A·Filed 2012·Granted Dec 10, 2013·1 cites·9 claims
- 4656US9159801B2Bipolar junction transistor with multiple emitter fingersIBM·Filed 2014·Granted Oct 13, 2015·0 cites·5 claims
- 4756US8872305B2Integrated circuit structure having air-gap trench isolation and related design structureIBM·Filed 2013·Granted Oct 28, 2014·0 cites·11 claims
- 4855US10170553B2Shaped terminals for a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·0 cites·12 claims
- 4954US9257324B2Forming structures on resistive substratesIBM·Filed 2014·Granted Feb 9, 2016·0 cites·17 claims
- 5053US9219128B2Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitanceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·0 cites·16 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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