Inventor · disambiguated record
Thomas Straubinger
Also filed as: STRAUBINGER THOMAS · STRAUBINGER THOMAS LUDWIG
6 granted patents·5 pending applications·47 citations·filing 2009–2023
78Inventor score
Top patents by PatentIndex Score
11 records- 0194US8865324B2Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distributionSTRAUBINGER THOMAS·Filed 2010·Granted Oct 21, 2014·34 cites·7 claims
- 0291US8747982B2Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 10, 2014·10 cites·27 claims
- 0382US9590046B2Monocrystalline SiC substrate with a non-homogeneous lattice plane courseSICRYSTAL AG·Filed 2014·Granted Mar 7, 2017·2 cites·7 claims
- 0477US8758510B2Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 24, 2014·1 cites·12 claims
- 0560US2024044044A1Crystal growth device and method for growing a semiconductorFORSCHUNGSVERBUND BERLIN EV·Filed 2023·Application pending·0 cites
- 0654US9376764B2Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growingSICRYSTAL AG·Filed 2013·Granted Jun 28, 2016·0 cites·17 claims
- 0748US2010159182A1Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC SubstrateSICRYSTAL AG·Filed 2009·Application pending·0 cites
- 0840US2011086213A1Method of producing a silicon carbide bulk single crystal with thermal treatment, and low-impedance monocrystalline silicon carbide substrateSICRYSTAL AG·Filed 2010·Application pending·0 cites
- 0938US2010175614A1Thermally insulated configuration and method for producing a bulk sic crystalSICRYSTAL AG·Filed 2010·Application pending·0 cites
- 1032US2012308759A1Low-dislocation monocrystalline aln substrateBARZ RALPH-UWE·Filed 2012·Application pending·0 cites
- 1129US8303924B2Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrateBARZ RALPH-UWE·Filed 2010·Granted Nov 6, 2012·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →