Inventor · disambiguated record
Hirokazu Fujiwara
Also filed as: FUJIWARA HIROKAZU
20 granted patents·7 pending applications·64 citations·filing 2004–2022
92Inventor score
Top patents by PatentIndex Score
27 records- 0191US8440524B2Semiconductor device manufacturing methodFUJIWARA HIROKAZU·Filed 2011·Granted May 14, 2013·14 cites·15 claims
- 0288US9954096B2Switching device and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Apr 24, 2018·5 cites·4 claims
- 0385US8748975B2Switching element and manufacturing method thereofFUJIWARA HIROKAZU·Filed 2012·Granted Jun 10, 2014·7 cites·9 claims
- 0482US8216667B2Tantalum carbide-coated carbon material and production method thereofFUJIWARA HIROKAZU·Filed 2006·Granted Jul 10, 2012·5 cites·20 claims
- 0576US9612215B2SusceptorFUJITA ICHIRO·Filed 2005·Granted Apr 4, 2017·7 cites·12 claims
- 0676US9201094B2Wafer examination device and wafer examination methodFUJIWARA HIROKAZU·Filed 2013·Granted Dec 1, 2015·3 cites·11 claims
- 0776US8470672B2Method of manufacturing silicon carbide semiconductor deviceENDO TAKESHI·Filed 2011·Granted Jun 25, 2013·4 cites·8 claims
- 0875US9780205B2Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereofSAITO JUN·Filed 2014·Granted Oct 3, 2017·3 cites·6 claims
- 0974US7855131B2Manufacturing method of a semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2009·Granted Dec 21, 2010·4 cites·5 claims
- 1072US8324704B2Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the sameYAMAMOTO TAKEO·Filed 2010·Granted Dec 4, 2012·3 cites·5 claims
- 1166US9853141B2Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodesSAITO JUN·Filed 2014·Granted Dec 26, 2017·2 cites·2 claims
- 1261US8168485B2Semiconductor device making methodENDO TAKESHI·Filed 2009·Granted May 1, 2012·2 cites·19 claims
- 1357US8164100B2Semiconductor device and method of manufacturing thereofFUJIWARA HIROKAZU·Filed 2008·Granted Apr 24, 2012·1 cites·2 claims
- 1454US9142411B2Method for producing semiconductor deviceTSUJIMURA MASATOSHI·Filed 2013·Granted Sep 22, 2015·1 cites·13 claims
- 1547US7779392B2Load balance control method and load balance control apparatus in data-processing systemHITACHI LTD·Filed 2004·Granted Aug 17, 2010·3 cites·2 claims
- 1646US2024221158A1Image diagnossis assistance device, image diagnossis assistance method, and image diagnossis assistance programUNIV KEIO·Filed 2022·Application pending·0 cites
- 1744US10020390B2Semiconductor device and semiconductor device manufacturing methodSAITO JUN·Filed 2014·Granted Jul 10, 2018·0 cites·9 claims
- 1844US2009267082A1Semiconductor device and manufacturing method of the sameDENSO CORP·Filed 2009·Application pending·0 cites
- 1943US9607836B2Semiconductor device and manufacturing method of semiconductor deviceFUJIWARA HIROKAZU·Filed 2013·Granted Mar 28, 2017·0 cites·3 claims
- 2043US2009224353A1DiodeDENSO CORP·Filed 2009·Application pending·0 cites
- 2143US2009230405A1Diode having Schottky junction and PN junction and method for manufacturing the sameDENSO CORP·Filed 2009·Application pending·0 cites
- 2243US2009160008A1Semiconductor device and method of manufacturing the sameFUJIWARA HIROKAZU·Filed 2008·Application pending·0 cites
- 2340US2007186858A1SusceptorTOYO TANSO CO·Filed 2005·Application pending·0 cites
- 2439US8436365B2SiC semiconductor device having Schottky barrier diode and method for manufacturing the sameYAMAMOTO TAKEO·Filed 2011·Granted May 7, 2013·0 cites·14 claims
- 2538US9899469B2Semiconductor device and manufacturing method thereofTOYOTA MOTOR CO LTD·Filed 2015·Granted Feb 20, 2018·0 cites·3 claims
- 2637US2013105889A1Switching device and method for manufacturing the sameFUJIWARA HIROKAZU·Filed 2012·Application pending·0 cites
- 2733US8163637B2Forming impurity regions in silicon carbide devicesKONISHI MASAKI·Filed 2010·Granted Apr 24, 2012·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →