Inventor · disambiguated record
Yuji Tobisaka
Also filed as: TOBISAKA YUJI
13 granted patents·8 pending applications·25 citations·filing 2002–2022
86Inventor score
Top patents by PatentIndex Score
21 records- 0181US8030176B2Method for preparing substrate having monocrystalline filmSHINETSU CHEMICAL CO·Filed 2009·Granted Oct 4, 2011·10 cites·16 claims
- 0275US7749870B2Method for producing SOI substrateSHINETSU CHEMICAL CO·Filed 2009·Granted Jul 6, 2010·6 cites·9 claims
- 0373US8551862B2Method of manufacturing laminated wafer by high temperature laminating methodAKIYAMA SHOJI·Filed 2010·Granted Oct 8, 2013·3 cites·8 claims
- 0470US8138064B2Method for producing silicon film-transferred insulator waferAKIYAMA SHOJI·Filed 2009·Granted Mar 20, 2012·3 cites·16 claims
- 0569US9741603B2Method for producing hybrid substrate, and hybrid substrateSHINETSU CHEMICAL CO·Filed 2014·Granted Aug 22, 2017·2 cites·9 claims
- 0662US8357586B2Method for manufacturing SOI waferSHINETSU CHEMICAL CO·Filed 2009·Granted Jan 22, 2013·1 cites·12 claims
- 0760US2008087048A1Glass base material manufacturing apparatus and method thereofTAKEI JUNICHIRO·Filed 2007·Application pending·0 cites
- 0859US2014144188A1Glass base material manufacturing apparatus and method thereofSHINETSU CHEMICAL CO·Filed 2013·Application pending·0 cites
- 0952US9214379B2SOS substrate having low defect density in vicinity of interfaceSHINETSU CHEMICAL CO·Filed 2013·Granted Dec 15, 2015·0 cites·9 claims
- 1052US9214380B2SOS substrate having low surface defect densitySHINETSU CHEMICAL CO·Filed 2013·Granted Dec 15, 2015·0 cites·10 claims
- 1151US8772132B2Method of manufacturing laminated wafer by high temperature laminating methodSHINETSU CHEMICAL CO·Filed 2013·Granted Jul 8, 2014·0 cites·8 claims
- 1250US2024339747A1Antenna module and manufacturing method thereofUNIV TOHOKU·Filed 2022·Application pending·0 cites
- 1348US8420503B2Method for producing SOI substrateAKIYAMA SHOJI·Filed 2009·Granted Apr 16, 2013·0 cites·9 claims
- 1447US2011003460A1Method for treating surface of soi substrateAKIYAMA SHOJI·Filed 2009·Application pending·0 cites
- 1547US2002194879A1Glass base material manufacturing apparatus and method thereofFiled 2002·Application pending·0 cites
- 1645US10103021B2Thermally oxidized heterogeneous composite substrate and method for manufacturing sameSHINETSU CHEMICAL CO·Filed 2013·Granted Oct 16, 2018·0 cites·11 claims
- 1745US2022113601A1Manufacturing method for micro display boardSHINETSU CHEMICAL CO·Filed 2019·Application pending·0 cites
- 1845US2012119323A1Sos substrate having low surface defect densityAKIYAMA SHOJI·Filed 2010·Application pending·0 cites
- 1945US2012126362A1Sos substrate having low defect density in the vicinity of interfaceAKIYAMA SHOJI·Filed 2010·Application pending·0 cites
- 2040US8314006B2Method for manufacturing bonded waferTOBISAKA YUJI·Filed 2009·Granted Nov 20, 2012·0 cites·6 claims
- 2133US8497188B2Method for producing bonded waferKAWAI MAKOTO·Filed 2010·Granted Jul 30, 2013·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →