Inventor · disambiguated record
Yasuo Namikawa
Also filed as: NAMIKAWA YASUO
20 granted patents·28 pending applications·194 citations·filing 1988–2019
94Inventor score
Files withNISHIGUCHI TARO12SUMITOMO ELECTRIC INDUSTRIES12SASAKI MAKOTO8FUJIKAWA KAZUHIRO3HORI TSUTOMU3
Top patents by PatentIndex Score
48 records- 0190US8435866B2Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Granted May 7, 2013·11 cites·14 claims
- 0286US6070911AClamp-type pipe jointJGC CORP·Filed 1999·Granted Jun 6, 2000·66 cites·12 claims
- 0380USD651992SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·26 cites·1 claims
- 0479USD651991SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·25 cites·1 claims
- 0575US8168515B2Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Granted May 1, 2012·3 cites·17 claims
- 0674USD655256SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Mar 6, 2012·20 cites·1 claims
- 0766US8697555B2Method of producing semiconductor device and semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2008·Granted Apr 15, 2014·2 cites·12 claims
- 0863US10829867B2GaAs crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Nov 10, 2020·0 cites·4 claims
- 0961US8921903B2Lateral junction field-effect transistorMASUDA TAKEYOSHI·Filed 2007·Granted Dec 30, 2014·2 cites·4 claims
- 1061US4994437AMethod of manufacturing oxide superconducting films by peritectic reactionSUMITOMO ELECTRIC INDUSTRIES·Filed 1988·Granted Feb 19, 1991·18 cites·12 claims
- 1150US6340535B2Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Jan 22, 2002·2 cites·9 claims
- 1249US8643065B2Semiconductor device and method for manufacturing the sameFUJIKAWA KAZUHIRO·Filed 2009·Granted Feb 4, 2014·0 cites·5 claims
- 1346US6881658B2Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the processSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Apr 19, 2005·1 cites·12 claims
- 1446US2012012862A1Method for manufacturing silicon carbide substrate, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 1546US2012025208A1Method for manufacturing silicon carbide substrate and silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 1645US10301744B2GaAs crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 28, 2019·0 cites·3 claims
- 1745US8629457B2Light-emitting deviceNISHIGUCHI TARO·Filed 2011·Granted Jan 14, 2014·0 cites·9 claims
- 1842US5851956AMethod of manufacturing oxide crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Dec 22, 1998·9 cites·8 claims
- 1939US8642476B2Method for manufacturing silicon carbide semiconductor deviceITOH SATOMI·Filed 2011·Granted Feb 4, 2014·0 cites·4 claims
- 2038US2011278593A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 2138US2011175107A1Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 2238US2012184113A1Method and device for manufacturing silicon carbide substrateINOUE HIROKI·Filed 2011·Application pending·0 cites
- 2338US2011278594A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 2438US2012126251A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceSASAKI MAKOTO·Filed 2011·Application pending·0 cites
- 2538US2011278595A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 2638US2011198027A1Method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 2738US2011233561A1Semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 2837US2012015499A1Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 2937US2011127585A1Lateral junction field-effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3037US2012068195A1Method for manufacturing silicon carbide substrate and silicon carbide substrateHARADA SHIN·Filed 2010·Application pending·0 cites
- 3137US2012003823A1Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 3237US2012003811A1Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 3337US2012003812A1Method of manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 3437US2012017826A1Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 3537US2012032191A1Method for manufacturing silicon carbide substrate and silicon carbide substrateHARADA SHIN·Filed 2010·Application pending·0 cites
- 3637US2012070605A1Silicon carbide ingot, silicon carbide substrate, manufacturing method thereof, crucible, and semiconductor substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 3737US2011284873A1Silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Application pending·0 cites
- 3837US2012161157A1Silicon carbide substrateINOUE HIROKI·Filed 2010·Application pending·0 cites
- 3937US2011306181A1Method of manufacturing silicon carbide substrateSASAKI MAKOTO·Filed 2010·Application pending·0 cites
- 4036US2012214309A1Method and apparatus of fabricating silicon carbide semiconductor deviceITOH SATOMI·Filed 2011·Application pending·0 cites
- 4136US2012056203A1Semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2010·Application pending·0 cites
- 4235US5632811AMethod of retaining melt of oxideSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted May 27, 1997·3 cites·11 claims
- 4335US2012161158A1Combined substrate having silicon carbide substrateHORI TSUTOMU·Filed 2011·Application pending·0 cites
- 4435US2012276715A1Method for manufacturing combined substrate having silicon carbide substrateHORI TSUTOMU·Filed 2011·Application pending·0 cites
- 4535US2012273800A1Composite substrate having single-crystal silicon carbide substrateHORI TSUTOMU·Filed 2011·Application pending·0 cites
- 4634US5846323ACrystal manufacturing apparatusINT SUPERCONDUCTIVITY TECH·Filed 1996·Granted Dec 8, 1998·4 cites·15 claims
- 4733US2012119225A1Silicon carbide substrate, epitaxial layer provided substrate, semiconductor device, and method for manufacturing silicon carbide substrateSHIOMI HIROMU·Filed 2011·Application pending·0 cites
- 4832US5707441AMethod for preparing an oxide crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Jan 13, 1998·2 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →