Inventor · disambiguated record
Ichiro Mizushima
Also filed as: MIZUSHIMA ICHIRO
103 granted patents·38 pending applications·2,281 citations·filing 1992–2024
99Inventor score
Top patents by PatentIndex Score
141 records- 0199US6531754B1Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Mar 11, 2003·250 cites·14 claims
- 0298US8476708B2Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentrationFUKUZUMI YOSHIAKI·Filed 2012·Granted Jul 2, 2013·59 cites·15 claims
- 0397US7235456B2Method of making empty space in siliconTOSHIBA KK·Filed 2006·Granted Jun 26, 2007·38 cites·26 claims
- 0496US8415242B2Nonvolatile semiconductor memory device and method of manufacturing the sameMIZUSHIMA ICHIRO·Filed 2010·Granted Apr 9, 2013·34 cites·14 claims
- 0596US7507634B2Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatmentTOSHIBA KK·Filed 2007·Granted Mar 24, 2009·28 cites·7 claims
- 0696US6335251B2Semiconductor apparatus having elevated source and drain structure and manufacturing method thereforTOSHIBA KK·Filed 2001·Granted Jan 1, 2002·123 cites·4 claims
- 0795US8624316B2Nonvolatile semiconductor memory device and method of fabricating the sameMIZUSHIMA ICHIRO·Filed 2011·Granted Jan 7, 2014·22 cites·9 claims
- 0895US7019364B1Semiconductor substrate having pillars within a closed empty spaceTOSHIBA KK·Filed 2000·Granted Mar 28, 2006·74 cites·12 claims
- 0995US6835981B2Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regionsTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·88 cites·16 claims
- 1095US6617226B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Sep 9, 2003·75 cites·4 claims
- 1195US6346732B1Semiconductor device with oxide mediated epitaxial layerTOSHIBA KK·Filed 2000·Granted Feb 12, 2002·86 cites·5 claims
- 1295US6342421B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1998·Granted Jan 29, 2002·168 cites·16 claims
- 1394US7009273B2Semiconductor device with a cavity therein and a method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Mar 7, 2006·92 cites·15 claims
- 1492US6395621B1Method of manufacturing a semiconductor device with oxide mediated epitaxial layerTOSHIBA KK·Filed 2001·Granted May 28, 2002·56 cites·13 claims
- 1591US6570217B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted May 27, 2003·96 cites·16 claims
- 1690US6630714B2Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layerTOSHIBA KK·Filed 2002·Granted Oct 7, 2003·47 cites·36 claims
- 1789US7989856B2Fin transistorTOSHIBA KK·Filed 2008·Granted Aug 2, 2011·17 cites·18 claims
- 1889US6100132AMethod of deforming a trench by a thermal treatmentTOSHIBA KK·Filed 1998·Granted Aug 8, 2000·72 cites·10 claims
- 1989US5864161ASemiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1995·Granted Jan 26, 1999·84 cites·5 claims
- 2088US7602013B2Semiconductor device with recessed channelTOSHIBA KK·Filed 2007·Granted Oct 13, 2009·12 cites·4 claims
- 2188US6906384B2Semiconductor device having one of patterned SOI and SON structureTOSHIBA KK·Filed 2002·Granted Jun 14, 2005·44 cites·19 claims
- 2287US8742391B2Non-volatile semiconductor memoryTOSHIBA KK·Filed 2013·Granted Jun 3, 2014·8 cites·20 claims
- 2387US6979846B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Dec 27, 2005·31 cites·13 claims
- 2487US6903025B2Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2003·Granted Jun 7, 2005·29 cites·40 claims
- 2586US7459748B2Semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted Dec 2, 2008·17 cites·13 claims
- 2686US7294562B2Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 13, 2007·12 cites·14 claims
- 2785US9257552B2Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2014·Granted Feb 9, 2016·7 cites·15 claims
- 2885US6552380B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Apr 22, 2003·28 cites·6 claims
- 2984US8637915B2Nonvolatile semiconductor memoryICHIGE MASAYUKI·Filed 2011·Granted Jan 28, 2014·7 cites·20 claims
- 3084US7537978B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted May 26, 2009·8 cites·15 claims
- 3183US8530957B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Sep 10, 2013·5 cites·7 claims
- 3282US8455346B2Method for manufacturing nonvolatile memory deviceNOJIRI YASUHIRO·Filed 2011·Granted Jun 4, 2013·4 cites·34 claims
- 3382US7829948B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Nov 9, 2010·8 cites·18 claims
- 3482US7420249B2Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layerTOSHIBA KK·Filed 2007·Granted Sep 2, 2008·7 cites·7 claims
- 3581US6600189B1Semiconductor device and semiconductor device manufacturing methodTOSHIBA KK·Filed 2000·Granted Jul 29, 2003·25 cites·4 claims
- 3681US6232641B1Semiconductor apparatus having elevated source and drain structure and manufacturing method thereforTOSHIBA KK·Filed 1999·Granted May 15, 2001·43 cites·20 claims
- 3781US6207591B1Method and equipment for manufacturing semiconductor deviceTOSHIBA KK·Filed 1998·Granted Mar 27, 2001·41 cites·26 claims
- 3880US6924518B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Aug 2, 2005·27 cites·22 claims
- 3979US8648464B2Semiconductor device and manufacturing method thereofKITAMURA MASAYUKI·Filed 2012·Granted Feb 11, 2014·6 cites·4 claims
- 4079US7982259B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Jul 19, 2011·6 cites·18 claims
- 4179US6018185ASemiconductor device with element isolation filmTOSHIBA KK·Filed 1997·Granted Jan 25, 2000·57 cites·11 claims
- 4278US7372086B2Semiconductor device including MOSFET and isolation region for isolating the MOSFETTOSHIBA KK·Filed 2004·Granted May 13, 2008·17 cites·14 claims
- 4378US7145215B2Semiconductor device with a cavity therein and a method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Dec 5, 2006·7 cites·5 claims
- 4478US6744104B1Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Jun 1, 2004·42 cites·28 claims
- 4576US7265017B2Method for manufacturing partial SOI substratesTOSHIBA KK·Filed 2005·Granted Sep 4, 2007·5 cites·6 claims
- 4676US7208353B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2005·Granted Apr 24, 2007·5 cites·4 claims
- 4776US7018904B2Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the sameTOSHIBA KK·Filed 2004·Granted Mar 28, 2006·17 cites·13 claims
- 4875US7842564B2Semiconductor memory device manufacturing method and semiconductor memory deviceTOSHIBA KK·Filed 2008·Granted Nov 30, 2010·6 cites·14 claims
- 4974US10325805B2Method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2017·Granted Jun 18, 2019·1 cites·16 claims
- 5074US8673786B2Method for manufacturing microstructure using self-assembly of amphiphilic polymerWATANABE KEI·Filed 2012·Granted Mar 18, 2014·3 cites·13 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ichiro Mizushima files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →