Inventor · disambiguated record
Sheung-Hee Park
Also filed as: PARK SHEUNG-HEE
19 granted patents·1 pending application·204 citations·filing 1997–2010
95Inventor score
Top patents by PatentIndex Score
20 records- 0189US7385851B1Repetitive erase verify technique for flash memory devicesSPANSION LLC·Filed 2006·Granted Jun 10, 2008·25 cites·23 claims
- 0284US7319615B1Ramp gate erase for dual bit flash memorySPANSION LLC·Filed 2006·Granted Jan 15, 2008·17 cites·15 claims
- 0379US6937518B1Programming of a flash memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 30, 2005·25 cites·20 claims
- 0472US7142455B1Positive gate stress during erase to improve retention in multi-level, non-volatile flash memorySPANSION LLC·Filed 2004·Granted Nov 28, 2006·18 cites·11 claims
- 0568US6469939B1Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) processADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 22, 2002·16 cites·48 claims
- 0667US7288809B1Flash memory with buried bit linesSPANSION LLC·Filed 2003·Granted Oct 30, 2007·10 cites·9 claims
- 0766US7599228B1Flash memory device having increased over-erase correction efficiency and robustness against device variationsSPANSION L L C·Filed 2004·Granted Oct 6, 2009·14 cites·18 claims
- 0866US7561471B2Cycling improvement using higher erase biasSPANSION LLC·Filed 2007·Granted Jul 14, 2009·6 cites·34 claims
- 0965US7952938B2Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memorySPANSION LLC·Filed 2010·Granted May 31, 2011·3 cites·20 claims
- 1063US6897518B1Flash memory cell having reduced leakage currentADVANCED MICRO DEVICES INC·Filed 2003·Granted May 24, 2005·10 cites·15 claims
- 1163US6392929B1Method of programming a flash memory cellHYUNDAI ELECTRONICS IND·Filed 2000·Granted May 21, 2002·13 cites·4 claims
- 1259US7746705B2Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memorySPANSION LLC·Filed 2007·Granted Jun 29, 2010·4 cites·13 claims
- 1357US7020021B1Ramped soft programming for control of erase voltage distributions in flash memory devicesADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·9 cites·16 claims
- 1456US6381192B1Address buffer in a flash memoryHYUNDAI ELECTRONICS IND·Filed 2000·Granted Apr 30, 2002·9 cites·22 claims
- 1554US6583465B1Code addressable memory cell in a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 24, 2003·5 cites·2 claims
- 1652US6754109B1Method of programming memory cellsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·7 cites·9 claims
- 1751US6950344B1Reading flash memoryADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 27, 2005·6 cites·18 claims
- 1842US6781885B1Method of programming a memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 24, 2004·3 cites·7 claims
- 1934US2002106852A1Lowered channel doping with source side boron implant for deep sub 0.18 micron flash memory cellFiled 2001·Application pending·0 cites
- 2031US5859452AMemory cell array having improved channel characteristicsHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jan 12, 1999·4 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →