Inventor · disambiguated record
Kiyotaka Imai
Also filed as: IMAI KIYOTAKA
49 granted patents·15 pending applications·968 citations·filing 1983–2025
98Inventor score
Top patents by PatentIndex Score
64 records- 0195US6222234B1Semiconductor device having partially and fully depleted SOI elements on a common substrateNEC CORP·Filed 1999·Granted Apr 24, 2001·147 cites·2 claims
- 0294US5506427AHeterojunction bipolar transistor with silicon-germanium baseNEC CORP·Filed 1994·Granted Apr 9, 1996·105 cites·6 claims
- 0388US5494836AProcess of producing heterojunction bipolar transistor with silicon-germanium baseNEC CORP·Filed 1995·Granted Feb 27, 1996·92 cites·10 claims
- 0488US5376816ABi-cmos integrated circuit device having buried region use in common for bipolar and mos transistorsNEC CORP·Filed 1993·Granted Dec 27, 1994·82 cites·3 claims
- 0584US5834825ASemiconductor device having spiral wiring directly covered with an insulating layer containing ferromagnetic particlesNEC CORP·Filed 1996·Granted Nov 10, 1998·75 cites·5 claims
- 0683US6342413B1Method of manufacturing semiconductor deviceNEC CORP·Filed 2000·Granted Jan 29, 2002·25 cites·19 claims
- 0778US6573027B1Manufacturing method of semiconductor deviceNEC CORP·Filed 2000·Granted Jun 3, 2003·22 cites·16 claims
- 0877US9893187B2Sacrificial non-epitaxial gate stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·2 cites·20 claims
- 0976US2025329579A1Method of manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1074US6337248B1Process for manufacturing semiconductor devicesNEC CORP·Filed 1999·Granted Jan 8, 2002·35 cites·5 claims
- 1172US7238996B2Semiconductor deviceNEC CORP·Filed 2005·Granted Jul 3, 2007·4 cites·10 claims
- 1272US6344675B1SOI-MOS field effect transistor with improved source/drain structure and method of forming the sameFiled 2000·Granted Feb 5, 2002·16 cites·55 claims
- 1371USD751989SElectric connectorHORIZON CO·Filed 2014·Granted Mar 22, 2016·16 cites·1 claims
- 1470US6461907B2Semiconductor device and fabrication methodNEC CORP·Filed 2001·Granted Oct 8, 2002·11 cites·7 claims
- 1568US12381112B2Method of manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2022·Granted Aug 5, 2025·0 cites·11 claims
- 1668US7759744B2Semiconductor device having high dielectric constant layers of different thicknessesNEC ELECTRONICS CORP·Filed 2005·Granted Jul 20, 2010·4 cites·1 claims
- 1768US6388504B1Integrated circuit device with switching between active mode and standby mode controlled by digital circuitNEC CORP·Filed 2000·Granted May 14, 2002·12 cites·10 claims
- 1868US5523245AProcess for fabricating high-performance facet-free small-sized bipolar transistorNEC CORP·Filed 1995·Granted Jun 4, 1996·37 cites·16 claims
- 1967US5648279AMethod of manufacturing bipolar transistor having emitter region and external base region formed in self alignment mannerNEC CORP·Filed 1995·Granted Jul 15, 1997·28 cites·2 claims
- 2066US5302535AMethod of manufacturing high speed bipolar transistorNEC CORP·Filed 1992·Granted Apr 12, 1994·27 cites·11 claims
- 2166US2025196283A1Systems and methods for panel polishingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2265US8389350B2Semiconductor device and method for manufacturing the same in which variations are reduced and characteristics are improvedSAKAKIDANI AKIHITO·Filed 2011·Granted Mar 5, 2013·3 cites·20 claims
- 2365US7754570B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Jul 13, 2010·2 cites·18 claims
- 2465US5872039ASemiconductor device and manufacturing method of the sameNEC CORP·Filed 1996·Granted Feb 16, 1999·24 cites·10 claims
- 2564US6489236B1Method for manufacturing a semiconductor device having a silicide layerNEC CORP·Filed 2000·Granted Dec 3, 2002·9 cites·7 claims
- 2664US5081658AMethod of measuring plating amount and plating film composition of plated steel plate and apparatus thereforNIPPON KOKAN KK·Filed 1990·Granted Jan 14, 1992·29 cites·19 claims
- 2764US2025006229A1Semiconductor memory deviceTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2861US6756676B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2001·Granted Jun 29, 2004·6 cites·12 claims
- 2961US6160291ASOI-MOS field effect transistor with improved source/drain structureNEC CORP·Filed 1998·Granted Dec 12, 2000·17 cites·79 claims
- 3061US5424228AMethod for fabricating a bipolar transistor with reduced base resistanceNEC CORP·Filed 1994·Granted Jun 13, 1995·20 cites·7 claims
- 3159US5508537ABipolar transistor with particular base structureNEC CORP·Filed 1994·Granted Apr 16, 1996·19 cites·5 claims
- 3258US6664148B2Integrated circuit device with switching between active mode and standby mode controlled by digital circuitNEC CORP·Filed 2002·Granted Dec 16, 2003·7 cites·12 claims
- 3355US2024412970A1Manufacturing method for semiconductor deviceTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 3454US9812816B2Connector for use with a socketHORIZON CO·Filed 2014·Granted Nov 7, 2017·4 cites·2 claims
- 3554US6368754B1Reticle used for fabrication of semiconductor deviceNEC CORP·Filed 1999·Granted Apr 9, 2002·14 cites·12 claims
- 3654US2024387176A1Stacked substrate for laser lift-off, substrate processing method, and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 3753US2025201721A1Substrate bonding method and bonded substrateTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3852US6297529B1Semiconductor device with multilayered gate structureNEC CORP·Filed 1999·Granted Oct 2, 2001·12 cites·4 claims
- 3951US5569611AMethod of manufacturing a bipolar transistor operating at low temperatureNEC CORP·Filed 1994·Granted Oct 29, 1996·13 cites·9 claims
- 4050US2024413146A1Method of manufacturing semiconductor device and semiconductor deviceTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 4149US7157322B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2001·Granted Jan 2, 2007·2 cites·23 claims
- 4246US11315789B2Method and structure for low density silicon oxide for fusion bonding and debondingTOKYO ELECTRON LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 4345US2008093699A1Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 4445US2010117156A1Semiconductor device and method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 4542US6194261B1High yield semiconductor device and method of fabricating the sameNEC CORP·Filed 1999·Granted Feb 27, 2001·8 cites·6 claims
- 4641US10536401B2Communication device, communication system and communication methodNEC CORP·Filed 2015·Granted Jan 14, 2020·0 cites·14 claims
- 4741US6160293ASub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layersNEC CORP·Filed 1998·Granted Dec 12, 2000·7 cites·14 claims
- 4841US6031271AHigh yield semiconductor device and method of fabricating the sameNEC CORP·Filed 1998·Granted Feb 29, 2000·8 cites·2 claims
- 4940US6472714B1Semiconductor device in which memory cells and peripheral circuits are provided on the same circuitNEC CORP·Filed 2000·Granted Oct 29, 2002·3 cites·10 claims
- 5040US4553854AMethod for continuously measuring surface temperature of heated steel stripNIPPON KOKAN KK·Filed 1983·Granted Nov 19, 1985·6 cites·8 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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