Inventor · disambiguated record
John P. Erdeljac
Also filed as: ERDELJAC JOHN P
22 granted patents·1,465 citations·filing 1987–2014
97Inventor score
Files withTEXAS INSTRUMENTS INC22
Top patents by PatentIndex Score
22 records- 0198US6683380B2Integrated circuit with bonding layer over active circuitryTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 27, 2004·274 cites·11 claims
- 0296US6144100AIntegrated circuit with bonding layer over active circuitryTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 7, 2000·256 cites·17 claims
- 0394US6424005B1LDMOS power device with oversized dwellTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 23, 2002·140 cites·11 claims
- 0494US6236101B1Metallization outside protective overcoat for improved capacitors and inductorsTEXAS INSTRUMENTS INC·Filed 1998·Granted May 22, 2001·180 cites·10 claims
- 0590US5489547AMethod of fabricating semiconductor device having polysilicon resistor with low temperature coefficientTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 6, 1996·115 cites·12 claims
- 0689US5171699AVertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabricationTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 15, 1992·71 cites·34 claims
- 0787US4805071AHigh voltage capacitor for integrated circuitsTEXAS INSTRUMENTS INC·Filed 1987·Granted Feb 14, 1989·49 cites·19 claims
- 0886US9431286B1Deep trench with self-aligned sinkerTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 30, 2016·8 cites·7 claims
- 0985US5330922ASemiconductor process for manufacturing semiconductor devices with increased operating voltagesTEXAS INSTRUMENTS INC·Filed 1989·Granted Jul 19, 1994·41 cites·24 claims
- 1085US5317180AVertical DMOS transistor built in an n-well MOS-based BiCMOS processTEXAS INSTRUMENTS INC·Filed 1992·Granted May 31, 1994·54 cites·17 claims
- 1182US5554873ASemiconductor device having polysilicon resistor with low temperature coefficientTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 10, 1996·58 cites·4 claims
- 1278US6284617B1Metalization outside protective overcoat for improved capacitors and inductorsTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 4, 2001·23 cites·1 claims
- 1378US5719421ADMOS transistor with low on-resistance and method of fabricationTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 17, 1998·43 cites·10 claims
- 1470US5825065ALow voltage DMOS transistorTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 20, 1998·30 cites·10 claims
- 1564US4994887AHigh voltage merged bipolar/CMOS technologyTEXAS INSTRUMENTS INC·Filed 1987·Granted Feb 19, 1991·26 cites·3 claims
- 1659US5408125ASemiconductor process for manufacturing semiconductor device with increased operating voltagesTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 18, 1995·16 cites·6 claims
- 1757US6153451ATransistor with increased operating voltage and method of fabricationTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 28, 2000·17 cites·9 claims
- 1854US6284669B1Power transistor with silicided gate and contactsTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 4, 2001·16 cites·4 claims
- 1954US5436179ASemiconductor process for manufacturing semiconductor devices with increased operating voltagesTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 25, 1995·15 cites·7 claims
- 2053US6534364B1Tunnel diode layout for an EEPROM cell for protecting the tunnel diode regionTEXAS INSTRUMENTS INC·Filed 1997·Granted Mar 18, 2003·14 cites·12 claims
- 2148US6025231ASelf aligned DMOS transistor and method of fabricationTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 15, 2000·10 cites·13 claims
- 2248US5576233AMethod for making an EEPROM with thermal oxide isolated floating gateTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 19, 1996·9 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →