Inventor · disambiguated record
Justin S. Sandford
Also filed as: SANDFORD JUSTIN · SANDFORD JUSTIN S
8 granted patents·10 pending applications·245 citations·filing 1997–2021
87Inventor score
Top patents by PatentIndex Score
18 records- 0195US7595248B2Angled implantation for removal of thin film layersINTEL CORP·Filed 2005·Granted Sep 29, 2009·28 cites·8 claims
- 0294US8441074B2Substrate fins with different heightsRACHMADY WILLY·Filed 2010·Granted May 14, 2013·21 cites·20 claims
- 0393US6121100AMethod of fabricating a MOS transistor with a raised source/drain extensionINTEL CORP·Filed 1997·Granted Sep 19, 2000·147 cites·12 claims
- 0489US7768079B2Transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachementINTEL CORP·Filed 2007·Granted Aug 3, 2010·17 cites·5 claims
- 0580US8629039B2Substrate fins with different heightsRACHMADY WILLY·Filed 2013·Granted Jan 14, 2014·4 cites·12 claims
- 0669US6362034B1Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric fieldINTEL CORP·Filed 1999·Granted Mar 26, 2002·28 cites·14 claims
- 0751US2009321834A1Substrate fins with different heightsRACHMADY WILLY·Filed 2008·Application pending·0 cites
- 0848US2009057788A1Angled implantation for removal of thin film layersHATTENDORF MICHAEL L·Filed 2008·Application pending·0 cites
- 0947US10777421B2Technologies for selectively etching oxide and nitride materials and products formed using the sameINTEL CORP·Filed 2017·Granted Sep 15, 2020·0 cites·11 claims
- 1047US2022399445A1Conductive via bar self-aligned to gate endINTEL CORP·Filed 2021·Application pending·0 cites
- 1147US2011147848A1Multiple transistor fin heightsKUHN KELIN J·Filed 2009·Application pending·0 cites
- 1246US2017004975A1Technologies for selectively etching oxide and nitride materials and products formed using the sameINTEL CORP·Filed 2013·Application pending·0 cites
- 1344US11393934B2FinFET based capacitors and resistors and related apparatuses, systems, and methodsINTEL CORP·Filed 2017·Granted Jul 19, 2022·0 cites·22 claims
- 1442US2009283922A1Integrating high stress cap layer in high-k metal gate transistorRACHMADY WILLY·Filed 2007·Application pending·0 cites
- 1539US2007262399A1Sealing spacer to reduce or eliminate lateral oxidation of a high-k gate dielectricDEWEY GILBERT·Filed 2006·Application pending·0 cites
- 1636US2013320453A1Area scaling on trigate transistorsPETHE ABHIJIT JAYANT·Filed 2012·Application pending·0 cites
- 1735US2006286807A1Use of active temperature control to provide emmisivity independent wafer temperatureHWANG JACK·Filed 2005·Application pending·0 cites
- 1832US2006004493A1Use of active temperature control to provide emmisivity independent wafer temperatureHWANG JACK·Filed 2004·Application pending·0 cites
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