Inventor · disambiguated record
Constantin Bulucea
Also filed as: BULUCEA CONSTANTIN
71 granted patents·7 pending applications·3,216 citations·filing 1988–2023
99Inventor score
Files withNAT SEMICONDUCTOR CORP46BULUCEA CONSTANTIN11SILICONIX INC5BAHL SANDEEP3TEXAS INSTRUMENTS INC3
Top patents by PatentIndex Score
78 records- 0199US8258026B2Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applicationsBULUCEA CONSTANTIN·Filed 2011·Granted Sep 4, 2012·95 cites·30 claims
- 0298US7595243B1Fabrication of semiconductor structure having N-channel channel-junction field-effect transistorNAT SEMICONDUCTOR CORP·Filed 2006·Granted Sep 29, 2009·115 cites·66 claims
- 0398US6548842B1Field-effect transistor for alleviating short-channel effectsNAT SEMICONDUCTOR CORP·Filed 2000·Granted Apr 15, 2003·240 cites·84 claims
- 0498US5072266ATrench DMOS power transistor with field-shaping body profile and three-dimensional geometrySILICONIX INC·Filed 1988·Granted Dec 10, 1991·441 cites·14 claims
- 0597US8163619B2Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2009·Granted Apr 24, 2012·121 cites·46 claims
- 0697US7419863B1Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zoneNAT SEMICONDUCTOR CORP·Filed 2005·Granted Sep 2, 2008·55 cites·18 claims
- 0797US6020227AFabrication of multiple field-effect transistor structure having local threshold-adjust dopingNAT SEMICONDUCTOR CORP·Filed 1997·Granted Feb 1, 2000·182 cites·28 claims
- 0896US7701005B1Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristicsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 20, 2010·33 cites·22 claims
- 0996US7176530B1Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistorNAT SEMICONDUCTOR CORP·Filed 2004·Granted Feb 13, 2007·91 cites·66 claims
- 1096US6566204B1Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistorsNAT SEMICONDUCTOR CORP·Filed 2000·Granted May 20, 2003·142 cites·44 claims
- 1196US5952701ADesign and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor valueNAT SEMICONDUCTOR CORP·Filed 1997·Granted Sep 14, 1999·177 cites·25 claims
- 1295US11881525B2Semiconductor device with bi-directional double-base trench power switchesIDEAL POWER INC·Filed 2022·Granted Jan 23, 2024·6 cites·20 claims
- 1395US8034679B1Fabrication of field-effect transistor having hypoabrupt body dopant distribution below source/drain zoneNAT SEMICONDUCTOR CORP·Filed 2010·Granted Oct 11, 2011·15 cites·20 claims
- 1495US7642574B2Semiconductor architecture having field-effect transistors especially suitable for analog applicationsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jan 5, 2010·40 cites·22 claims
- 1595US6078082AField-effect transistor having multi-part channelNAT SEMICONDUCTOR CORP·Filed 1997·Granted Jun 20, 2000·117 cites·1 claims
- 1695US5744372AFabrication of complementary field-effect transistors each having multi-part channelNAT SEMICONDUCTOR CORP·Filed 1995·Granted Apr 28, 1998·128 cites·12 claims
- 1794US7595244B1Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristicsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Sep 29, 2009·18 cites·38 claims
- 1894US7145191B1P-channel field-effect transistor with reduced junction capacitanceNAT SEMICONDUCTOR CORP·Filed 2004·Granted Dec 5, 2006·57 cites·58 claims
- 1994US5866931ADMOS power transistor with reduced number of contacts using integrated body-source connectionsSILICONIX INC·Filed 1996·Granted Feb 2, 1999·124 cites·7 claims
- 2093US7879669B1Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel lengthNAT SEMICONDUCTOR CORP·Filed 2006·Granted Feb 1, 2011·17 cites·40 claims
- 2193US7579642B1Gate-enhanced junction varactorNAT SEMICONDUCTOR CORP·Filed 2006·Granted Aug 25, 2009·21 cites·50 claims
- 2293US6127700AField-effect transistor having local threshold-adjust dopingNAT SEMICONDUCTOR CORP·Filed 1995·Granted Oct 3, 2000·108 cites·51 claims
- 2393US5298442ATrench DMOS power transistor with field-shaping body profile and three-dimensional geometrySILICONIX INC·Filed 1991·Granted Mar 29, 1994·98 cites·24 claims
- 2492US6599804B2Fabrication of field-effect transistor for alleviating short-channel effectsNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jul 29, 2003·57 cites·34 claims
- 2591US12148819B2System and method for bi-directional trench power switchesIDEAL POWER INC·Filed 2023·Granted Nov 19, 2024·1 cites·17 claims
- 2691US8101479B2Fabrication of asymmetric field-effect transistors using L-shaped spacersPARKER D COURTNEY·Filed 2009·Granted Jan 24, 2012·32 cites·44 claims
- 2791US7081663B2Gate-enhanced junction varactor with gradual capacitance variationNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jul 25, 2006·28 cites·86 claims
- 2890US8148777B1Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zoneBULUCEA CONSTANTIN·Filed 2010·Granted Apr 3, 2012·8 cites·46 claims
- 2990US5410170ADMOS power transistors with reduced number of contacts using integrated body-source connectionsSILICONIX INC·Filed 1993·Granted Apr 25, 1995·72 cites·9 claims
- 3088US6576966B1Field-effect transistor having multi-part channelNAT SEMICONDUCTOR CORP·Filed 2000·Granted Jun 10, 2003·36 cites·30 claims
- 3187US8735980B2Configuration and fabrication of semiconductor structure using empty and filled wellsNAT SEMICONDUCTOR CORP·Filed 2012·Granted May 27, 2014·7 cites·18 claims
- 3286US8013390B1Semiconductor architecture having field-effect transistors especially suitable for analog applicationsNAT SEMICONDUCTOR CORP·Filed 2010·Granted Sep 6, 2011·5 cites·34 claims
- 3386US7863681B1Semiconductor structure utilizing empty and filled wellsNAT SEMICONDUCTOR CORP·Filed 2009·Granted Jan 4, 2011·7 cites·36 claims
- 3486US7838369B2Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applicationsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Nov 23, 2010·8 cites·26 claims
- 3585US6797576B1Fabrication of p-channel field-effect transistor for reducing junction capacitanceNAT SEMICONDUCTOR CORP·Filed 2002·Granted Sep 28, 2004·35 cites·26 claims
- 3685US5217907AArray spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular constructionNAT SEMICONDUCTOR CORP·Filed 1992·Granted Jun 8, 1993·58 cites·6 claims
- 3784US8610207B2Semiconductor architecture having field-effect transistors especially suitable for analog applicationsBULUCEA CONSTANTIN·Filed 2011·Granted Dec 17, 2013·4 cites·32 claims
- 3884US8304835B2Configuration and fabrication of semiconductor structure using empty and filled wellsBULUCEA CONSTANTIN·Filed 2009·Granted Nov 6, 2012·8 cites·82 claims
- 3984US7785971B1Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakageNAT SEMICONDUCTOR CORP·Filed 2007·Granted Aug 31, 2010·6 cites·52 claims
- 4083US5441900ACMOS latchup suppression by localized minority carrier lifetime reductionNAT SEMICONDUCTOR CORP·Filed 1994·Granted Aug 15, 1995·51 cites·6 claims
- 4182US8415752B2Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2012·Granted Apr 9, 2013·5 cites·30 claims
- 4282US8410549B2Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocketBULUCEA CONSTANTIN·Filed 2009·Granted Apr 2, 2013·8 cites·20 claims
- 4381US6627950B1Trench DMOS power transistor with field-shaping body profile and three-dimensional geometrySILICONIX INC·Filed 1997·Granted Sep 30, 2003·40 cites·92 claims
- 4480US5701023AInsulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggednessNAT SEMICONDUCTOR CORP·Filed 1994·Granted Dec 23, 1997·41 cites·52 claims
- 4579US8629027B1Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsBULUCEA CONSTANTIN·Filed 2011·Granted Jan 14, 2014·4 cites·34 claims
- 4679US8513703B2Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the sameBAHL SANDEEP·Filed 2010·Granted Aug 20, 2013·6 cites·12 claims
- 4779US7973372B2Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopantsNAT SEMICONDUCTOR CORP·Filed 2009·Granted Jul 5, 2011·5 cites·32 claims
- 4879US5581115ABipolar transistors using isolated selective doping to improve performance characteristicsNAT SEMICONDUCTOR CORP·Filed 1994·Granted Dec 3, 1996·41 cites·19 claims
- 4978US8309420B1Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applicationsBULUCEA CONSTANTIN·Filed 2011·Granted Nov 13, 2012·3 cites·38 claims
- 5078US7838930B1Insulated-gate field-effect transistor with hypoabrupt step change in body dopant concentration below source/drain zoneNAT SEMICONDUCTOR CORP·Filed 2007·Granted Nov 23, 2010·4 cites·34 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →