Inventor · disambiguated record
Hyuck Soo Yang
Also filed as: YANG HYUCK SOO
4 granted patents·2 pending applications·7 citations·filing 2011–2021
66Inventor score
Files withMICRON TECHNOLOGY INC2GLOBALFOUNDRIES INC1GLOBALFOUNDRIES US INC1TOKYO ELECTRON LTD1YANG SEUNG JIN1
Top patents by PatentIndex Score
6 records- 0178US11522068B2IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Dec 6, 2022·2 cites·9 claims
- 0276US10453936B2Methods of forming replacement gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·2 cites·20 claims
- 0368US8507997B2Mask read-only memory having a fake select transistorYANG SEUNG-JIN·Filed 2011·Granted Aug 13, 2013·3 cites·18 claims
- 0456US12199094B2Apparatuses including Finfets having different gate oxide configurations, and related computing systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 14, 2025·0 cites·13 claims
- 0544US2023371242A1Method for fabricating semiconductor device with oxide semiconductor materialTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 0641US2023062092A1Recessed Access Devices And Methods Of Forming A Recessed Access DevicesMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →