Inventor · disambiguated record
Andrew E. Horch
Also filed as: HORCH ANDREW · HORCH ANDREW E · HORCH ANDREW EDWARD
95 granted patents·5 pending applications·1,778 citations·filing 1993–2024
99Inventor score
Top patents by PatentIndex Score
100 records- 0198US9953990B1One-time programmable memory using rupturing of gate insulationSYNOPSYS INC·Filed 2017·Granted Apr 24, 2018·21 cites·18 claims
- 0298US7456439B1Vertical thyristor-based memory with trench isolation and its method of fabricationT RAM SEMICONDUCTOR INC·Filed 2004·Granted Nov 25, 2008·161 cites·13 claims
- 0398US6653174B1Thyristor-based device over substrate surfaceT RAM INC·Filed 2001·Granted Nov 25, 2003·115 cites·36 claims
- 0497US7400255B2Wireless functional testing of RFID tagIMPINJ INC·Filed 2005·Granted Jul 15, 2008·53 cites·27 claims
- 0596US7897440B1Vertical thyristor-based memory with trench isolation and method of fabrication thereofT RAM SEMICONDUCTOR INC·Filed 2008·Granted Mar 1, 2011·40 cites·13 claims
- 0694US7528724B2On die RFID tag antennaIMPINJ INC·Filed 2005·Granted May 5, 2009·35 cites·22 claims
- 0794US6965129B1Thyristor-based device having dual control portsT RAM INC·Filed 2002·Granted Nov 15, 2005·73 cites·38 claims
- 0893US12082403B1One time programmable bitcell with select device in isolated wellSYNOPSYS INC·Filed 2022·Granted Sep 3, 2024·3 cites·20 claims
- 0993US10446562B1One-time programmable bitcell with partially native select deviceSYNOPSYS INC·Filed 2017·Granted Oct 15, 2019·9 cites·12 claims
- 1093US7939861B2Non-volatile memory devices having floating-gates FETs with different source-gate and drain-gate border lengthsSYNOPSYS INC·Filed 2007·Granted May 10, 2011·21 cites·17 claims
- 1193US7508719B2Non-volatile memory cell circuit with programming through band-to-band tunneling and impact ionization gate currentVIRAGE LOGIC CORP·Filed 2006·Granted Mar 24, 2009·26 cites·36 claims
- 1293US7482251B1Etch before grind for semiconductor die singulationIMPINJ INC·Filed 2007·Granted Jan 27, 2009·52 cites·42 claims
- 1393US6790713B1Method for making an inlayed thyristor-based deviceT RAM INC·Filed 2002·Granted Sep 14, 2004·72 cites·30 claims
- 1492US7320895B1Thyristor-based device having dual control portsT RAM SEMICONDUCTOR INC·Filed 2005·Granted Jan 22, 2008·19 cites·9 claims
- 1591US6703646B1Thyristor with lightly-doped emitterT RAM INC·Filed 2002·Granted Mar 9, 2004·48 cites·24 claims
- 1691US6690039B1Thyristor-based device that inhibits undesirable conductive channel formationT RAM INC·Filed 2002·Granted Feb 10, 2004·61 cites·23 claims
- 1790US8674422B2Asymmetric dense floating gate nonvolatile memory with decoupled capacitorHORCH ANDREW E·Filed 2012·Granted Mar 18, 2014·12 cites·16 claims
- 1890US7474568B2Non-volatile memory with programming through band-to-band tunneling and impact ionization gate currentVIRAGE LOGIC CORP·Filed 2006·Granted Jan 6, 2009·23 cites·25 claims
- 1989US8122307B1One time programmable memory test structures and methodsLINDHORST CHAD A·Filed 2007·Granted Feb 21, 2012·27 cites·49 claims
- 2089US7326969B1Semiconductor device incorporating thyristor-based memory and strained siliconT RAM SEMICONDUCTOR INC·Filed 2004·Granted Feb 5, 2008·46 cites·19 claims
- 2189US6953953B1Deep trench isolation for thyristor-based semiconductor deviceT RAM INC·Filed 2002·Granted Oct 11, 2005·40 cites·20 claims
- 2289US6781888B1Reference cells for TCCT based memory cellsT RAM INC·Filed 2002·Granted Aug 24, 2004·39 cites·12 claims
- 2388US9001580B1Asymmetric dense floating gate nonvolatile memory with decoupled capacitorSYNOPSYS INC·Filed 2013·Granted Apr 7, 2015·9 cites·21 claims
- 2488US7312622B2Wafer level testing for RFID tagsIMPINJ INC·Filed 2004·Granted Dec 25, 2007·38 cites·26 claims
- 2588US7304327B1Thyristor circuit and approach for temperature stabilityT RAM SEMICONDUCTOR INC·Filed 2003·Granted Dec 4, 2007·32 cites·17 claims
- 2688US6727528B1Thyristor-based device including trench dielectric isolation for thyristor-body regionsT RAM INC·Filed 2001·Granted Apr 27, 2004·39 cites·46 claims
- 2786US7651882B1RFID tag circuit die with shielding layer to control I/O bump flowIMPINJ INC·Filed 2007·Granted Jan 26, 2010·27 cites·32 claims
- 2886US6690038B1Thyristor-based device over substrate surfaceT RAM INC·Filed 2002·Granted Feb 10, 2004·40 cites·28 claims
- 2984US8373167B2RFID tag having non-volatile memory device having floating-gate FETs with different source-gate and drain-gate border lengthsSYNOPSYS INC·Filed 2007·Granted Feb 12, 2013·8 cites·14 claims
- 3084US6888176B1Thyrister semiconductor deviceT RAM INC·Filed 2003·Granted May 3, 2005·33 cites·18 claims
- 3183US8194468B2Non-volatile memory cell with BTBT programmingHORCH ANDREW E·Filed 2011·Granted Jun 5, 2012·7 cites·20 claims
- 3283US7279367B1Method of manufacturing a thyristor semiconductor deviceT RAM SEMICONDUCTOR INC·Filed 2004·Granted Oct 9, 2007·27 cites·39 claims
- 3382US7125753B1Self-aligned thin capacitively-coupled thyristor structureT RAM SEMICONDUCTOR INC·Filed 2005·Granted Oct 24, 2006·9 cites·7 claims
- 3482US6756612B1Carrier coupler for thyristor-based semiconductor deviceT RAM INC·Filed 2002·Granted Jun 29, 2004·25 cites·18 claims
- 3581US8598642B2Very dense NVM bitcellHORCH ANDREW E·Filed 2011·Granted Dec 3, 2013·5 cites·18 claims
- 3681US7491586B2Semiconductor device with leakage implant and method of fabricationT RAM SEMICONDUCTOR INC·Filed 2005·Granted Feb 17, 2009·9 cites·27 claims
- 3781US6767770B1Method of forming self-aligned thin capacitively-coupled thyristor structureT RAM INC·Filed 2002·Granted Jul 27, 2004·23 cites·33 claims
- 3881US6686612B1Thyristor-based device adapted to inhibit parasitic currentT RAM INC·Filed 2002·Granted Feb 3, 2004·27 cites·30 claims
- 3980US7718492B2Non-volatile memory cell circuit with programming through band-to-band tunneling and impact ionization gate currentVIRAGE LOGIC CORP·Filed 2009·Granted May 18, 2010·10 cites·20 claims
- 4080US6828202B1Semiconductor region self-aligned with ion implant shadowingT RAM INC·Filed 2003·Granted Dec 7, 2004·26 cites·4 claims
- 4179US6980457B1Thyristor-based device having a reduced-resistance contact to a buried emitter regionT RAM INC·Filed 2002·Granted Dec 27, 2005·19 cites·28 claims
- 4279US6940772B1Reference cells for TCCT based memory cellsT RAM INC·Filed 2002·Granted Sep 6, 2005·19 cites·22 claims
- 4379US6583452B1Thyristor-based device having extended capacitive couplingT RAM INC·Filed 2001·Granted Jun 24, 2003·25 cites·23 claims
- 4478US6815734B1Varied trench depth for thyristor isolationT RAM INC·Filed 2002·Granted Nov 9, 2004·22 cites·14 claims
- 4576US8829588B2NVM bitcell with a replacement control gate and additional floating gateHORCH ANDREW E·Filed 2011·Granted Sep 9, 2014·4 cites·25 claims
- 4676US6818482B1Method for trench isolation for thyristor-based deviceT RAM INC·Filed 2002·Granted Nov 16, 2004·23 cites·48 claims
- 4774US10529436B1One-time programmable bitcell with diode under anti-fuseSYNOPSYS INC·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 4873US8630117B2RFID tag having non-volatile memory device having floating-gate FETs with different source-gate and drain-gate border lengthsSYNOPSYS INC·Filed 2013·Granted Jan 14, 2014·2 cites·11 claims
- 4973US2025124992A1One-time programmable bitcell for frontside and backside power interconnectSYNOPSYS INC·Filed 2024·Application pending·0 cites
- 5072US9406812B1Asymmetric dense floating gate nonvolatile memory with decoupled capacitorSYNOPSYS INC·Filed 2015·Granted Aug 2, 2016·2 cites·26 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →