Inventor · disambiguated record
Joel P. Desouza
Also filed as: DESOUZA JOEL P
10 granted patents·5 pending applications·330 citations·filing 1991–2020
89Inventor score
Top patents by PatentIndex Score
15 records- 0198US7772096B2Formation of SOI by oxidation of silicon with engineered porosity gradientINTERNAT MACHINES CORP·Filed 2008·Granted Aug 10, 2010·201 cites·9 claims
- 0297US7968459B2Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistorsIBM·Filed 2008·Granted Jun 28, 2011·104 cites·21 claims
- 0386US9324813B2Doped zinc oxide as N+ layer for semiconductor devicesIBM·Filed 2014·Granted Apr 26, 2016·5 cites·18 claims
- 0475US9917215B2Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devicesIBM·Filed 2016·Granted Mar 13, 2018·1 cites·20 claims
- 0574US9379259B2Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devicesIBM·Filed 2012·Granted Jun 28, 2016·1 cites·25 claims
- 0670US9722033B2Doped zinc oxide as n+ layer for semiconductor devicesIBM·Filed 2016·Granted Aug 1, 2017·1 cites·18 claims
- 0768US11444215B2Double layered transparent conductive oxide for reduced Schottky barrier in photovoltaic devicesIBM·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 0865US7465992B2Field effect transistor with mixed-crystal-orientation channel and source/drain regionsIBM·Filed 2005·Granted Dec 16, 2008·3 cites·28 claims
- 0964US10593815B2Double layered transparent conductive oxide for reduced Schottky barrier in photovoltaic devicesIBM·Filed 2018·Granted Mar 17, 2020·0 cites·20 claims
- 1062US2014124795A1Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devicesIBM·Filed 2012·Application pending·0 cites
- 1149US2011212622A1Surface texturing using a low quality dielectric layerIBM·Filed 2010·Application pending·0 cites
- 1239US5188978AControlled silicon doping of III-V compounds by thermal oxidation of silicon capping layerIBM·Filed 1991·Granted Feb 23, 1993·14 cites·43 claims
- 1338US2005170570A1High electrical quality buried oxide in simoxIBM·Filed 2004·Application pending·0 cites
- 1437US2004266129A1Method of forming silicon-on-insulator wafers having process resistant applicationsIBM·Filed 2003·Application pending·0 cites
- 1537US2007218597A1Structure and method for controlling the behavior of dislocations in strained semiconductor layersIBM·Filed 2006·Application pending·0 cites
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