Inventor · disambiguated record
Joo Jin
Also filed as: JIN JOO · JIN JOO SEOK
4 granted patents·10 pending applications·6 citations·filing 2010–2025
63Inventor score
Top patents by PatentIndex Score
14 records- 0180US8481102B2Temperature control method for chemical vapor deposition apparatusHONG SUNG JAE·Filed 2010·Granted Jul 9, 2013·4 cites·12 claims
- 0275US2025297350A1Method of forming plasma-resistant coating layer with low brightness using heat treatment process of rare-earth metal compound powder and plasma-resistant coating film formed therebyKOMICO LTD·Filed 2025·Application pending·0 cites
- 0373US12378654B2Method of forming plasma-resistant coating layer with low brightness using heat treatment process of rare-earth metal compound powderKOMICO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·6 claims
- 0464US12480574B2TransmissionHYUNDAI TRANSYS INC·Filed 2021·Granted Nov 25, 2025·0 cites·6 claims
- 0560US8703614B2Metal organic chemical vapor deposition apparatus and methodLIG ADP CO LTD·Filed 2012·Granted Apr 22, 2014·2 cites·5 claims
- 0658US2024124967A1Method of forming plasma-resistant coating filmKOMICO LTD·Filed 2023·Application pending·0 cites
- 0751US2025313189A1Control apparatus and method of electric oil pump for hybrid vehicleHYUNDAI TRANSYS INC·Filed 2024·Application pending·0 cites
- 0835US2011159183A1Chemical vapor deposition apparatus and a control method thereofLIG ADP CO LTD·Filed 2010·Application pending·0 cites
- 0934US2012217538A1Nitride based light emitting device using wurtzite powder and method of manufacturing the sameJIN JOO·Filed 2011·Application pending·0 cites
- 1034US2012217536A1Nitride based light emitting device with excellent crystallinity and brightness and method of manufacturing the sameJIN JOO·Filed 2011·Application pending·0 cites
- 1134US2012217503A1METHOD OF MANUFACTURING GaN POWDER AND NITRIDE-BASED LIGHT EMITTING DEVICE USING GaN POWDER MANUFACTURED BY THE METHODJIN JOO·Filed 2011·Application pending·0 cites
- 1229US2012217470A1Nitride based light emitting device with excellent crystallinity and brightness and method of manufacturing the sameJIN JOO·Filed 2011·Application pending·0 cites
- 1329US2012217504A1Nitride based light emitting device using silicon substrate and method of manufacturing the sameJIN JOO·Filed 2011·Application pending·0 cites
- 1429US2012217537A1Nitride based light emitting device using patterned lattice buffer layer and method of manufacturing the sameJIN JOO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →