Inventor · disambiguated record
Yun-Yu Wang
Also filed as: WANG YUN · WANG YUN Y · WANG YUN-YU
106 granted patents·27 pending applications·1,158 citations·filing 1998–2023
99Inventor score
Files withIBM94GLOBALFOUNDRIES INC9INFINEON TECHNOLOGIES AG6DECLOAK INTELLIGENCES CO2DOMENICUCCI ANTHONY G2
Top patents by PatentIndex Score
133 records- 0197US6921711B2Method for forming metal replacement gate of high performanceIBM·Filed 2003·Granted Jul 26, 2005·147 cites·25 claims
- 0295US7402532B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2006·Granted Jul 22, 2008·28 cites·1 claims
- 0393US7569475B2Interconnect structure having enhanced electromigration reliability and a method of fabricating sameIBM·Filed 2006·Granted Aug 4, 2009·25 cites·1 claims
- 0492US9551674B1Method of producing an un-distorted dark field strain map at high spatial resolution through dark field electron holographyGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·6 cites·20 claims
- 0592US8729702B1Copper seed layer for an interconnect structure having a doping concentration level gradientST MICROELECTRONICS INC·Filed 2012·Granted May 20, 2014·13 cites·26 claims
- 0692US7750418B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2008·Granted Jul 6, 2010·18 cites·31 claims
- 0790US7504336B2Methods for forming CMOS devices with intrinsically stressed metal silicide layersIBM·Filed 2006·Granted Mar 17, 2009·16 cites·18 claims
- 0890US6323130B1Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridgingIBM·Filed 2000·Granted Nov 27, 2001·59 cites·16 claims
- 0988US7425497B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2006·Granted Sep 16, 2008·14 cites·1 claims
- 1088US6440851B1Method and structure for controlling the interface roughness of cobalt disilicideIBM·Filed 1999·Granted Aug 27, 2002·57 cites·24 claims
- 1187US6784105B1Simultaneous native oxide removal and metal neutral deposition methodINFINEON TECHNOLOGIES CORP·Filed 2003·Granted Aug 31, 2004·45 cites·16 claims
- 1286US9023697B23D transistor channel mobility enhancementIBM·Filed 2013·Granted May 5, 2015·6 cites·15 claims
- 1386US8343825B2Reducing dislocation formation in semiconductor devices through targeted carbon implantationIBM·Filed 2011·Granted Jan 1, 2013·7 cites·21 claims
- 1485US9680019B1Fin-type field-effect transistors with strained channelsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·3 cites·13 claims
- 1585US9275907B23D transistor channel mobility enhancementIBM·Filed 2014·Granted Mar 1, 2016·5 cites·20 claims
- 1685US8138083B2Interconnect structure having enhanced electromigration reliability and a method of fabricating sameYANG CHIH-CHAO·Filed 2009·Granted Mar 20, 2012·10 cites·25 claims
- 1785US7790599B2Metal cap for interconnect structuresIBM·Filed 2007·Granted Sep 7, 2010·13 cites·13 claims
- 1884US7563704B2Method of forming an interconnect including a dielectric cap having a tensile stressIBM·Filed 2005·Granted Jul 21, 2009·12 cites·14 claims
- 1984US6388327B1Capping layer for improved silicide formation in narrow semiconductor structuresIBM·Filed 2001·Granted May 14, 2002·31 cites·6 claims
- 2083US9953927B1Liner replacements for interconnect openingsGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 24, 2018·5 cites·20 claims
- 2182US7102232B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2004·Granted Sep 5, 2006·19 cites·13 claims
- 2282US6887783B2Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereofINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 3, 2005·26 cites·18 claims
- 2380US8236709B2Method of fabricating a device using low temperature anneal processes, a device and design structureDOMENICUCCI ANTHONY G·Filed 2009·Granted Aug 7, 2012·6 cites·20 claims
- 2480US7122462B2Back end interconnect with a shaped interfaceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 17, 2006·25 cites·5 claims
- 2580US7109116B1Method for reducing dendrite formation in nickel silicon salicide processesIBM·Filed 2005·Granted Sep 19, 2006·7 cites·4 claims
- 2680US6331486B1Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloyIBM·Filed 2000·Granted Dec 18, 2001·21 cites·22 claims
- 2780US6207584B1High dielectric constant material deposition to achieve high capacitanceIBM·Filed 2000·Granted Mar 27, 2001·24 cites·31 claims
- 2879US7514370B2Compressive nitride film and method of manufacturing thereofIBM·Filed 2006·Granted Apr 7, 2009·6 cites·5 claims
- 2979US7372158B2HDP-based ILD capping layerIBM·Filed 2006·Granted May 13, 2008·8 cites·15 claims
- 3078US8294485B2Detecting asymmetrical transistor leakage defectsOUYANG XU·Filed 2010·Granted Oct 23, 2012·4 cites·5 claims
- 3177US7820559B2Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layerIBM·Filed 2008·Granted Oct 26, 2010·4 cites·19 claims
- 3276US9685553B2Generating tensile strain in bulk finFET channelGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 20, 2017·2 cites·11 claims
- 3376US6285996B1Run-time support for user-defined index ranges and index filtersIBM·Filed 1998·Granted Sep 4, 2001·75 cites·31 claims
- 3475US9105741B2Method of replacement source/drain for 3D CMOS transistorsCHAN KEVIN K·Filed 2012·Granted Aug 11, 2015·4 cites·13 claims
- 3575US7956417B2Method of reducing stacking faults through annealingIBM·Filed 2010·Granted Jun 7, 2011·3 cites·6 claims
- 3675US7138717B2HDP-based ILD capping layerIBM·Filed 2004·Granted Nov 21, 2006·19 cites·10 claims
- 3775US6261951B1Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 1999·Granted Jul 17, 2001·34 cites·19 claims
- 3874US7101784B2Method to generate porous organic dielectricIBM·Filed 2005·Granted Sep 5, 2006·5 cites·20 claims
- 3974US6387790B1Conversion of amorphous layer produced during IMP Ti depositionIBM·Filed 2000·Granted May 14, 2002·19 cites·19 claims
- 4073US9905694B2Fin-type field-effect transistors with strained channelsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·1 cites·7 claims
- 4173US7241696B2Method for depositing a metal layer on a semiconductor interconnect structure having a capping layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 10, 2007·20 cites·19 claims
- 4273US6753606B2Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloyIBM·Filed 2001·Granted Jun 22, 2004·13 cites·11 claims
- 4372US7287325B2Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishingIBM·Filed 2005·Granted Oct 30, 2007·3 cites·7 claims
- 4472US6878624B1Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSiIBM·Filed 2003·Granted Apr 12, 2005·20 cites·20 claims
- 4572US6593660B2Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 2001·Granted Jul 15, 2003·11 cites·12 claims
- 4672US6475893B2Method for improved fabrication of salicide structuresIBM·Filed 2001·Granted Nov 5, 2002·16 cites·26 claims
- 4771US8125048B2Antifuse structure for in line circuit modificationKANE TERENCE L·Filed 2009·Granted Feb 28, 2012·3 cites·4 claims
- 4871US7498256B2Copper contact via structure using hybrid barrier layerIBM·Filed 2006·Granted Mar 3, 2009·5 cites·1 claims
- 4971US7015469B2Electron holography methodIBM·Filed 2004·Granted Mar 21, 2006·8 cites·5 claims
- 5071US6914320B2Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 5, 2005·13 cites·17 claims
Showing the top 50 of 133 patent records by PatentIndex Score.
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