Inventor · disambiguated record
Hans-Joachim L. Gossmann
Also filed as: GOSSMANN HANS · GOSSMANN HANS-JOACHIM · GOSSMANN HANS-JOACHIM L · GOSSMANN HANS-JOACHIM LUDWIG
27 granted patents·4 pending applications·587 citations·filing 1990–2024
95Inventor score
Files withAPPLIED MATERIALS INC17LUCENT TECHNOLOGIES INC5VARIAN SEMICONDUCTOR EQUIPMENT ASS INC4AGERE SYST GUARDIAN CORP2AGERE SYSTEMS INC1
Top patents by PatentIndex Score
31 records- 0196US9853129B2Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growthAPPLIED MATERIALS INC·Filed 2016·Granted Dec 26, 2017·18 cites·14 claims
- 0295US11699570B1System and method for hi-precision ion implantationAPPLIED MATERIALS INC·Filed 2022·Granted Jul 11, 2023·3 cites·20 claims
- 0394US6153920AProcess for controlling dopant diffusion in a semiconductor layer and semiconductor device formed therebyLUCENT TECHNOLOGIES INC·Filed 1998·Granted Nov 28, 2000·172 cites·3 claims
- 0494US6043139AProcess for controlling dopant diffusion in a semiconductor layerLUCENT TECHNOLOGIES INC·Filed 1995·Granted Mar 28, 2000·161 cites·35 claims
- 0594US5731626AProcess for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed therebyLUCENT TECHNOLOGIES INC·Filed 1997·Granted Mar 24, 1998·173 cites·17 claims
- 0685US11804537B2Channeled implants for SiC MOSFET fabricationAPPLIED MATERIALS INC·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 0782US11476330B2System and technique for creating implanted regions using multiple tilt anglesAPPLIED MATERIALS INC·Filed 2020·Granted Oct 18, 2022·1 cites·15 claims
- 0875US12471322B2Horizontal GAA nano-wire and nano-slab transistorsAPPLIED MATERIALS INC·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 0975US10381465B2Method for fabricating asymmetrical three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 13, 2019·2 cites·11 claims
- 1074US9455196B2Method for improving fin isolationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Sep 27, 2016·2 cites·18 claims
- 1167US12002852B2System and technique for creating implanted regions using multiple tilt anglesAPPLIED MATERIALS INC·Filed 2022·Granted Jun 4, 2024·0 cites·15 claims
- 1265US9748364B2Method for fabricating three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 29, 2017·1 cites·18 claims
- 1364US11495500B2Horizontal GAA nano-wire and nano-slab transistorsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 8, 2022·0 cites·19 claims
- 1461US2025204061A1Complementary metal oxide semiconductor image sensor with reduced p-type region widthAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1559US11424125B2Angled ion implant to reduce MOSFET trench sidewall roughnessAPPLIED MATERIALS INC·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 1657US6632728B2Increasing the electrical activation of ion-implanted dopantsAGERE SYSTEMS INC·Filed 2001·Granted Oct 14, 2003·8 cites·10 claims
- 1757US2025112043A1LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTSAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1856US12247283B2Method and apparatus for controlled ion implantationAPPLIED MATERIALS INC·Filed 2021·Granted Mar 11, 2025·0 cites·17 claims
- 1954US11830739B2Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ionsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 28, 2023·0 cites·18 claims
- 2054US2025038000A1SiC TRENCH BOTTOM CORNER ROUNDINGAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2153US6358824B1Integrated circuits with tub-ties and shallow trench isolationAGERE SYST GUARDIAN CORP·Filed 2000·Granted Mar 19, 2002·6 cites·3 claims
- 2251US11551904B2System and technique for profile modulation using high tilt anglesAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·0 cites·20 claims
- 2351US10483355B2Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growthAPPLIED MATERIALS INC·Filed 2017·Granted Nov 19, 2019·0 cites·11 claims
- 2450US2025226224A1ASHABLE MASK FOR SiC TRENCH IMPLANTAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2549US12381088B2Method for precision oxidation control by ion implantationAPPLIED MATERIALS INC·Filed 2022·Granted Aug 5, 2025·0 cites·12 claims
- 2646US9455335B2Techniques for ion implantation of non-planar field effect transistorsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2013·Granted Sep 27, 2016·0 cites·17 claims
- 2740US5169798AForming a semiconductor layer using molecular beam epitaxyAT & T BELL LAB·Filed 1990·Granted Dec 8, 1992·11 cites·8 claims
- 2838US6403454B1Silicon semiconductor devices with δ-doped layersAGERE SYST GUARDIAN CORP·Filed 1999·Granted Jun 11, 2002·8 cites·5 claims
- 2937US6054342AMethod of making integrated circuits with tub-tiesLUCENT TECHNOLOGIES INC·Filed 1999·Granted Apr 25, 2000·6 cites·5 claims
- 3036US5949112AIntegrated circuits with tub-tiesLUCENT TECHNOLOGIES INC·Filed 1998·Granted Sep 7, 1999·5 cites·9 claims
- 3136US5500391AMethod for making a semiconductor device including diffusion controlAT & T CORP·Filed 1994·Granted Mar 19, 1996·9 cites·5 claims
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