Inventor · disambiguated record
Beth Ann Rainey
Also filed as: RAINEY BETH A · RAINEY BETH ANN
11 granted patents·1 pending application·717 citations·filing 2002–2012
91Inventor score
Top patents by PatentIndex Score
12 records- 0198US6642090B1Fin FET devices from bulk semiconductor and method for formingIBM·Filed 2002·Granted Nov 4, 2003·540 cites·18 claims
- 0292US7119416B1Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2005·Granted Oct 10, 2006·21 cites·6 claims
- 0392US6664582B2Fin memory cell and method of fabricationIBM·Filed 2002·Granted Dec 16, 2003·68 cites·20 claims
- 0489US6888187B2DRAM cell with enhanced SER immunityIBM·Filed 2002·Granted May 3, 2005·42 cites·15 claims
- 0582US7037798B2Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2004·Granted May 2, 2006·26 cites·7 claims
- 0680US7696034B2Methods of base formation in a BiCOMS processIBM·Filed 2008·Granted Apr 13, 2010·6 cites·9 claims
- 0769US6864136B2DRAM cell with enhanced SER immunityIBM·Filed 2003·Granted Mar 8, 2005·12 cites·4 claims
- 0868US8299561B2Shielding for high-voltage semiconductor-on-insulator devicesBOTULA ALAN B·Filed 2010·Granted Oct 30, 2012·2 cites·24 claims
- 0957US8278197B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2008·Granted Oct 2, 2012·0 cites·14 claims
- 1054US8716759B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2012·Granted May 6, 2014·0 cites·11 claims
- 1152US8890246B2Shielding for high-voltage semiconductor-on-insulator devicesBOTULA ALAN B·Filed 2012·Granted Nov 18, 2014·0 cites·24 claims
- 1233US2006154423A1Methods of forming structure and spacer and related finfetFRIED DAVID M·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →