Inventor · disambiguated record
Somit Talwar
Also filed as: TALWAR SOMIT
34 granted patents·2 pending applications·2,334 citations·filing 1997–2008
98Inventor score
Top patents by PatentIndex Score
36 records- 0198US6747245B2Laser scanning apparatus and methods for thermal processingULTRATECH STEPPER INC·Filed 2002·Granted Jun 8, 2004·190 cites·43 claims
- 0298US6635588B1Method for laser thermal processing using thermally induced reflectivity switchULTRATECH STEPPER INC·Filed 2002·Granted Oct 21, 2003·287 cites·30 claims
- 0398US6479821B1Thermally induced phase switch for laser thermal processingULTRATECH STEPPER INC·Filed 2000·Granted Nov 12, 2002·289 cites·48 claims
- 0495US7154066B2Laser scanning apparatus and methods for thermal processingULTRATECH INC·Filed 2004·Granted Dec 26, 2006·81 cites·10 claims
- 0595US6365476B1Laser thermal process for fabricating field-effect transistorsULTRATECH STEPPER INC·Filed 2000·Granted Apr 2, 2002·125 cites·21 claims
- 0694US7494942B2Laser thermal annealing of lightly doped silicon substratesULTRATECH INC·Filed 2006·Granted Feb 24, 2009·22 cites·9 claims
- 0794US7399945B2Method of thermal processing a substrate with direct and redirected reflected radiationULTRATECH INC·Filed 2006·Granted Jul 15, 2008·23 cites·6 claims
- 0894US6380044B1High-speed semiconductor transistor and selective absorption process forming sameULTRATECH STEPPER INC·Filed 2000·Granted Apr 30, 2002·95 cites·80 claims
- 0993US7098155B2Laser thermal annealing of lightly doped silicon substratesULTRATECH INC·Filed 2004·Granted Aug 29, 2006·57 cites·8 claims
- 1093US6383956B2Method of forming thermally induced reflectivity switch for laser thermal processingULTRATECH STEPPER INC·Filed 2001·Granted May 7, 2002·61 cites·17 claims
- 1193US6303476B1Thermally induced reflectivity switch for laser thermal processingULTRATECH STEPPER INC·Filed 2000·Granted Oct 16, 2001·62 cites·12 claims
- 1292US6300208B1Methods for annealing an integrated device using a radiant energy absorber layerULTRATECH STEPPER INC·Filed 2000·Granted Oct 9, 2001·61 cites·55 claims
- 1392US6274488B1Method of forming a silicide region in a Si substrate and a device having sameULTRATECH STEPPER INC·Filed 2000·Granted Aug 14, 2001·79 cites·27 claims
- 1492US5908307AFabrication method for reduced-dimension FET devicesULTRATECH STEPPER INC·Filed 1997·Granted Jun 1, 1999·138 cites·38 claims
- 1591US6645838B1Selective absorption process for forming an activated doped region in a semiconductorULTRATECH STEPPER INC·Filed 2002·Granted Nov 11, 2003·60 cites·12 claims
- 1691US5888888AMethod for forming a silicide region on a silicon bodyULTRATECH STEPPER INC·Filed 1997·Granted Mar 30, 1999·122 cites·32 claims
- 1789US6495390B2Thermally induced reflectivity switch for laser thermal processingULTRATECH STEPPER INC·Filed 2001·Granted Dec 17, 2002·38 cites·40 claims
- 1888US6570656B1Illumination fluence regulation system and method for use in thermal processing employed in the fabrication of reduced-dimension integrated circuitsULTRATECH STEPPER INC·Filed 2000·Granted May 27, 2003·48 cites·17 claims
- 1987US7879741B2Laser thermal annealing of lightly doped silicon substratesULTRATECH INC·Filed 2006·Granted Feb 1, 2011·10 cites·18 claims
- 2087US6825101B1Methods for annealing a substrate and article produced by such methodsULTRATECH INC·Filed 2000·Granted Nov 30, 2004·36 cites·65 claims
- 2186US7763828B2Laser thermal processing with laser diode radiationULTRATECH INC·Filed 2003·Granted Jul 27, 2010·35 cites·22 claims
- 2286US7157660B2Laser scanning apparatus and methods for thermal processingULTRATECH INC·Filed 2004·Granted Jan 2, 2007·30 cites·33 claims
- 2386US7148159B2Laser thermal annealing of lightly doped silicon substratesULTRATECH INC·Filed 2003·Granted Dec 12, 2006·31 cites·17 claims
- 2486US5956603AGas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuitsULTRATECH STEPPER INC·Filed 1998·Granted Sep 21, 1999·83 cites·15 claims
- 2585US6420264B1Method of forming a silicide region in a Si substrate and a device having sameULTRATECH STEPPER INC·Filed 2001·Granted Jul 16, 2002·41 cites·25 claims
- 2682US6777317B2Method for semiconductor gate dopingULTRATECH STEPPER INC·Filed 2001·Granted Aug 17, 2004·41 cites·23 claims
- 2782US6635541B1Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layerULTRATECH STEPPER INC·Filed 2000·Granted Oct 21, 2003·29 cites·22 claims
- 2880US7145104B2Silicon layer for uniformizing temperature during photo-annealingULTRATECH INC·Filed 2004·Granted Dec 5, 2006·24 cites·26 claims
- 2977US6388297B1Structure and method for an optical block in shallow trench isolation for improved laser anneal controlULTRATECH STEPPER INC·Filed 2000·Granted May 14, 2002·20 cites·6 claims
- 3074US6297135B1Method for forming silicide regions on an integrated deviceULTRATECH STEPPER INC·Filed 1998·Granted Oct 2, 2001·42 cites·50 claims
- 3170US6387803B2Method for forming a silicide region on a silicon bodyULTRATECH STEPPER INC·Filed 1998·Granted May 14, 2002·37 cites·42 claims
- 3266US6326219B2Methods for determining wavelength and pulse length of radiant energy used for annealingULTRATECH STEPPER INC·Filed 1999·Granted Dec 4, 2001·29 cites·85 claims
- 3361US7731798B2Heated chuck for laser thermal processingULTRATECH INC·Filed 2004·Granted Jun 8, 2010·8 cites·36 claims
- 3455US2009095724A1Laser thermal processing with laser diode radiationULTRATECH INC·Filed 2008·Application pending·0 cites
- 3544US2005189329A1Laser thermal processing with laser diode radiationFiled 2004·Application pending·0 cites
- 3639US7326877B2Laser thermal processing chuck with a thermal compensating heater moduleULTRATECH INC·Filed 2004·Granted Feb 5, 2008·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →