Inventor · disambiguated record
Takashi Nakabayashi
Also filed as: NAKABAYASHI TAKASHI
68 granted patents·22 pending applications·766 citations·filing 1975–2022
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD31HITACHI METALS LTD16KUBOTA KK12PANASONIC CORP10PROTERIAL LTD4
Top patents by PatentIndex Score
90 records- 0192US6319782B1Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 20, 2001·84 cites·9 claims
- 0291US5903031AMIS device, method of manufacturing the same, and method of diagnosing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted May 11, 1999·117 cites·13 claims
- 0390US10256466B2Positive-electrode material for lithium ion secondary battery, method and producing the same, and lithium ion secondary batteryHITACHI METALS LTD·Filed 2016·Granted Apr 9, 2019·3 cites·11 claims
- 0488US11432464B2Harvesting machine with crop detection and harvesting width detectionKUBOTA KK·Filed 2018·Granted Sep 6, 2022·8 cites·17 claims
- 0588US10461328B2Cathode active material used for lithium ion secondary battery and lithium ion secondary battery using sameHITACHI METALS LTD·Filed 2017·Granted Oct 29, 2019·2 cites·8 claims
- 0688US5736421ASemiconductor device and associated fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 7, 1998·78 cites·6 claims
- 0785US5698902ASemiconductor device having finely configured gate electrodesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 16, 1997·70 cites·13 claims
- 0884US9224512B2Positive electrode active material for non-aqueous secondary battery and manufacturing method thereof, as well as non-aqueous secondary battery using positive electrode active materialHITACHI METALS LTD·Filed 2014·Granted Dec 29, 2015·3 cites·13 claims
- 0980US6143626AMethod of manufacturing a semiconductor device using a trench isolation techniqueMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 7, 2000·51 cites·9 claims
- 1079US7834419B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Nov 16, 2010·6 cites·43 claims
- 1175US7126174B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·13 cites·20 claims
- 1274US11581534B2Positive-electrode material for lithium ion secondary battery, method for producing the same, and lithium ion secondary batteryHITACHI METALS LTD·Filed 2020·Granted Feb 14, 2023·0 cites·3 claims
- 1374US10749175B2Positive-electrode material for lithium ion secondary battery, method for producing the same, and lithium ion secondary batteryHITACHI METALS LTD·Filed 2019·Granted Aug 18, 2020·0 cites·3 claims
- 1473US10193150B2Lithium ion secondary battery cathode material, lithium ion secondary battery cathode and lithium ion secondary battery that use same, and method for manufacturing lithium ion secondary battery cathode materialHITACHI METALS LTD·Filed 2015·Granted Jan 29, 2019·1 cites·7 claims
- 1573US6280888B1Phase-shifting mask with multiple phase-shift regionsMATSUSHITA ELECTRONICS CORP·Filed 2000·Granted Aug 28, 2001·11 cites·13 claims
- 1672US11764356B2Method for producing positive electrode active material for lithium ion secondary batteriesPROTERIAL LTD·Filed 2021·Granted Sep 19, 2023·0 cites·8 claims
- 1772US9071040B2Ion generatorMAMIYA TOSHIO·Filed 2011·Granted Jun 30, 2015·5 cites·10 claims
- 1871US7474683B2Distributed feedback semiconductor laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jan 6, 2009·3 cites·6 claims
- 1971US7109536B2Memory embedded semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Sep 19, 2006·10 cites·12 claims
- 2071US6876682B2Light generating moduleSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Apr 5, 2005·11 cites·20 claims
- 2171US6621123B1Semiconductor device, and semiconductor integrated deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 16, 2003·15 cites·8 claims
- 2271US6281562B1Semiconductor device which reduces the minimum distance requirements between active areasMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 28, 2001·28 cites·12 claims
- 2369US8911901B2Negative electrode for non-aqueous secondary battery and non-aqueous secondary batteryNAKABAYASHI TAKASHI·Filed 2012·Granted Dec 16, 2014·1 cites·17 claims
- 2468US5946563ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Aug 31, 1999·29 cites·13 claims
- 2566US8481115B2Coated, fine metal particles comprising titanium oxide and silicon oxide coating, and their production methodTOKORO HISATO·Filed 2009·Granted Jul 9, 2013·2 cites·13 claims
- 2666US7737480B2Semiconductor memory device and manufacturing method thereofPANASONIC CORP·Filed 2007·Granted Jun 15, 2010·3 cites·6 claims
- 2766US6114095AMethod of manufacturing electronic device using phase-shifting mask with multiple phase-shift regionsMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Sep 5, 2000·22 cites·5 claims
- 2866US2024158260A1Method for manufacturing positive electrode active material for lithium-ion secondary batteryPROTERIAL LTD·Filed 2022·Application pending·0 cites
- 2965US6747320B2Semiconductor device with DRAM insideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 8, 2004·11 cites·9 claims
- 3065US2024317605A1Positive electrode active material for lithium ion secondary battery, and lithium ion secondary batteryPROTERIAL LTD·Filed 2022·Application pending·0 cites
- 3163US11665999B2Harvester with clog determining unitKUBOTA KK·Filed 2018·Granted Jun 6, 2023·2 cites·2 claims
- 3263US6093592AMethod of manufacturing a semiconductor apparatus having a silicon-on-insulator structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 25, 2000·20 cites·4 claims
- 3362US7622777B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Nov 24, 2009·1 cites·35 claims
- 3462US6758607B2Optical communication module and optical communication module productSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Jul 6, 2004·14 cites·20 claims
- 3562US5960300AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Sep 28, 1999·24 cites·6 claims
- 3662US2023282819A1Positive electrode active material for lithium ion secondary battery, and lithium ion secondary battery in which same is usedPROTERIAL LTD·Filed 2021·Application pending·0 cites
- 3761US7795662B2Semiconductor memory device and method for fabricating samePANASONIC CORP·Filed 2007·Granted Sep 14, 2010·2 cites·16 claims
- 3861US7763922B2Semiconductor memory and method for manufacturing the samePANASONIC CORP·Filed 2005·Granted Jul 27, 2010·2 cites·20 claims
- 3961US6492672B1Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 10, 2002·7 cites·11 claims
- 4061US5879983ASemiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Mar 9, 1999·16 cites·4 claims
- 4157US6124160ASemiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Sep 26, 2000·13 cites·4 claims
- 4257US2019207215A1Method for producing positive electrode active material for lithium ion secondary batteries, positive electrode active material for lithium ion secondary batteries, and lithium ion secondary batteryHITACHI METALS LTD·Filed 2017·Application pending·0 cites
- 4356US7932153B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2009·Granted Apr 26, 2011·0 cites·4 claims
- 4456US5925912ASemiconductor apparatus having a conductive sidewall structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jul 20, 1999·22 cites·5 claims
- 4555US10749176B2Cathode active material used for lithium ion secondary battery, method for producing same, and lithium ion secondary batteryHITACHI METALS LTD·Filed 2016·Granted Aug 18, 2020·0 cites·8 claims
- 4653US12245548B2Agricultural work machine such as harvesterKUBOTA KK·Filed 2020·Granted Mar 11, 2025·0 cites·25 claims
- 4753US6967409B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 22, 2005·3 cites·81 claims
- 4852US8247074B2Coated, fine metal particles comprising specific content of carbon and nitrogen, and their production methodTOKORO HISATO·Filed 2007·Granted Aug 21, 2012·0 cites·15 claims
- 4951US6906382B2Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 14, 2005·4 cites·22 claims
- 5050US2015188139A1Positive Electrode Active Material for Lithium Secondary Batteries, Positive Electrode for Lithium Secondary Batteries Using Same, Lithium Secondary Battery, and Method for Producing Positive Electrode Active Material for Lithium Secondary BatteriesHITACHI METALS LTD·Filed 2013·Application pending·0 cites
Showing the top 50 of 90 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Takashi Nakabayashi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →