Inventor · disambiguated record
Bong Seok Suh
Also filed as: SUH BONG-SEOK
20 granted patents·7 pending applications·106 citations·filing 2004–2024
93Inventor score
Top patents by PatentIndex Score
27 records- 0194US11101269B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·4 cites·20 claims
- 0294US7332764B2Metal-insulator-metal (MIM) capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·38 cites·22 claims
- 0392US11784186B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 10, 2023·2 cites·20 claims
- 0488US7335590B2Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 26, 2008·21 cites·40 claims
- 0586US2025126882A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0683US8633520B2Semiconductor deviceYU DONG-HEE·Filed 2010·Granted Jan 21, 2014·9 cites·20 claims
- 0782US10804265B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 0881US12183734B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0974US7863201B2Methods of forming field effect transistors having silicided source/drain contacts with low contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·4 cites·12 claims
- 1070US6953745B2Void-free metal interconnection structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 11, 2005·17 cites·20 claims
- 1169US7655525B2Semiconductor device free of gate spacer stress and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·4 cites·20 claims
- 1269US7446033B2Method of forming a metal interconnection of a semiconductor device, and metal interconnection formed by such methodSAMUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·4 cites·40 claims
- 1363US11967614B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 1463US11538807B2Method for fabricating a semiconductor device including a gate structure with an inclined side wallSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·10 claims
- 1562US12107135B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·18 claims
- 1661US7341908B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 11, 2008·1 cites·34 claims
- 1758US11139382B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 5, 2021·0 cites·19 claims
- 1857US11322589B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·0 cites·9 claims
- 1957US11011519B2Semiconductor device including gate structure having device isolation filmSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 18, 2021·0 cites·20 claims
- 2050US2014131815A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2147US11063150B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·19 claims
- 2244US10636793B2FINFETs having electrically insulating diffusion break regions therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·18 claims
- 2342US2007298600A1Method of Fabricating Semiconductor Device and Semiconductor Device Fabricated TherebySUH BONG-SEOK·Filed 2006·Application pending·0 cites
- 2442US2006289999A1Selective copper alloy interconnections in semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2542US2009057755A1Spacer undercut filler, method of manufacture thereof and articles comprising the sameIBM·Filed 2007·Application pending·0 cites
- 2641US2006154465A1Method for fabricating interconnection line in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2736US2008067612A1Semiconductor Device Including Nickel Alloy Silicide Layer Having Uniform Thickness and Method of Manufacturing the SameLEE SUN JUNG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →