Inventor · disambiguated record
Long Hinh
Also filed as: HINH LONG · HINH LONG T
14 granted patents·1 pending application·33 citations·filing 2009–2022
89Inventor score
Files withCYPRESS SEMICONDUCTOR CORP11Infineon Technologies LLC2JENNE FREDRICK B1Longitude Flash Memory Solutions Ltd1
Top patents by PatentIndex Score
15 records- 0194US8953380B1Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Feb 10, 2015·14 cites·20 claims
- 0292US11017851B1Silicon-oxide-nitride-oxide-silicon based multi level non-volatile memory device and methods of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted May 25, 2021·5 cites·21 claims
- 0383US9378821B1Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jun 28, 2016·7 cites·14 claims
- 0478US9466374B2Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 11, 2016·3 cites·20 claims
- 0576US11810616B2Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereofInfineon Technologies LLC·Filed 2022·Granted Nov 7, 2023·0 cites·18 claims
- 0675US12183395B2Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereofInfineon Technologies LLC·Filed 2022·Granted Dec 31, 2024·0 cites·22 claims
- 0769US11367481B2Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2021·Granted Jun 21, 2022·0 cites·21 claims
- 0868US11355185B2Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereofCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Jun 7, 2022·0 cites·24 claims
- 0967US8897067B2Nonvolatile memory cells and methods of making such cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Nov 25, 2014·2 cites·7 claims
- 1060US9747987B1Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Aug 29, 2017·1 cites·20 claims
- 1153US2019318785A1Systems, methods, and apparatus for memory cells with common source linesLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 1252US10192622B2Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jan 29, 2019·0 cites·20 claims
- 1351US9818484B2Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Nov 14, 2017·0 cites·5 claims
- 1450US9627073B2Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Apr 18, 2017·0 cites·5 claims
- 1545US8670278B1Method and apparatus for extending the lifetime of a non-volatile trapped-charge memoryJENNE FREDRICK B·Filed 2009·Granted Mar 11, 2014·1 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →