Inventor · disambiguated record
Jeong-Hwan Son
Also filed as: SON JEONG-HWAN
40 granted patents·4 pending applications·1,038 citations·filing 1996–2024
98Inventor score
Files withLG SEMICON CO LTD23HYUNDAI ELECTRONICS IND14HYNIX SEMICONDUCTOR INC2HUEN CO LTD1HYUNDAI ELECTRONCIS IND CO LTD1
Top patents by PatentIndex Score
44 records- 0191US6103562AMethod of making semiconductor device with decreased channel width and constant threshold voltageLG SEMICON CO LTD·Filed 1999·Granted Aug 15, 2000·125 cites·7 claims
- 0289US6383876B1MOS device having non-uniform dopant concentration and method for fabricating the sameLG SEMICON CO LTD·Filed 2000·Granted May 7, 2002·51 cites·3 claims
- 0389US6063681ASilicide formation using two metalizationsLG SEMICON CO LTD·Filed 1998·Granted May 16, 2000·82 cites·15 claims
- 0489US5851866AFabrication method for CMOS with sidewallsLG SEMICON CO LTD·Filed 1997·Granted Dec 22, 1998·72 cites·44 claims
- 0589US5750430AMethod for making metal oxide semiconductor field effect transistor (MOSFET)LG SEMICON CO LTD·Filed 1996·Granted May 12, 1998·74 cites·12 claims
- 0681US5696012AFabrication method of semiconductor memory device containing CMOS transistorsLG SEMICON CO LTD·Filed 1996·Granted Dec 9, 1997·65 cites·6 claims
- 0780US6218248B1Semiconductor device and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 17, 2001·52 cites·13 claims
- 0880US6066534AMethod of manufacturing a field effect transistorLG SEMICON CO LTD·Filed 1997·Granted May 23, 2000·47 cites·11 claims
- 0979US6010936ASemiconductor device fabrication methodLG SEMICON CO LTD·Filed 1997·Granted Jan 4, 2000·45 cites·33 claims
- 1078US6455402B2Method of forming retrograde doping file in twin well CMOS deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Sep 24, 2002·21 cites·6 claims
- 1177US6337505B2Semiconductor device and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jan 8, 2002·17 cites·6 claims
- 1277US6110769ASOI (silicon on insulator) device and method for fabricating the sameLG SEMICON CO LTD·Filed 1998·Granted Aug 29, 2000·40 cites·10 claims
- 1376US6210998B1Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layerHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 3, 2001·37 cites·12 claims
- 1472US6169315B1Metal oxide semiconductor field effect transistor (MOSFET) and method for making thereofHYUNDAI ELECTRONICS IND·Filed 1998·Granted Jan 2, 2001·29 cites·9 claims
- 1572US6023088ASemiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layerLG SEMICON CO LTD·Filed 1998·Granted Feb 8, 2000·30 cites·26 claims
- 1672US5759885AMethod for fabricating CMOSFET having LDD structureLG SEMICON CO LTD·Filed 1997·Granted Jun 2, 1998·33 cites·23 claims
- 1767US5904538AMethod for developing shallow trench isolation in a semiconductor memory deviceLG SEMICON CO LTD·Filed 1997·Granted May 18, 1999·41 cites·24 claims
- 1861US2025218661A1Multilayer electronic componentSAMSUNG ELECTRO MECH·Filed 2024·Application pending·0 cites
- 1959US6537927B1Apparatus and method for heat-treating semiconductor substrateHYNIX SEMICONDUCTOR INC·Filed 1999·Granted Mar 25, 2003·22 cites·15 claims
- 2056US6251760B1Semiconductor device and its wiring and a fabrication method thereofHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jun 26, 2001·16 cites·15 claims
- 2155US6146953AFabrication method for mosfet deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Nov 14, 2000·20 cites·15 claims
- 2255US6064096ASemiconductor LDD device having halo impurity regionsLG SEMICON CO LTD·Filed 1998·Granted May 16, 2000·13 cites·20 claims
- 2354US6348715B1SOI (silicon on insulator) deviceLG SEMICON CO LTD·Filed 2000·Granted Feb 19, 2002·6 cites·10 claims
- 2453US6362060B2Method for forming semiconductor device having a gate in the trenchHYUNDAI ELECTRONICS IND·Filed 2001·Granted Mar 26, 2002·4 cites·18 claims
- 2553US5747865AVaractor diode controllable by surface layout designKOREA ADVANCED INST SCI & TECH·Filed 1997·Granted May 5, 1998·16 cites·11 claims
- 2648US5877532ASemiconductor device and method of manufacturing the sameLG SEMICON CO LTD·Filed 1997·Granted Mar 2, 1999·8 cites·36 claims
- 2747US6180473B1Method for manufacturing semiconductor deviceHYUNDAI ELECTRONCIS IND CO LTD·Filed 1999·Granted Jan 30, 2001·14 cites·13 claims
- 2845US6462389B2Semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Oct 8, 2002·3 cites·13 claims
- 2943US6297136B1Method for fabricating an embedded semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Oct 2, 2001·10 cites·7 claims
- 3043US6261910B1Semiconductor device and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 1998·Granted Jul 17, 2001·6 cites·21 claims
- 3141US6137141AMOS device and fabrication methodLG SEMICON CO LTD·Filed 1998·Granted Oct 24, 2000·8 cites·12 claims
- 3241US5789266AMetal oxide semiconductor field effect transistor (MOSFET) fabrication methodLG SEMICON CO LTD·Filed 1996·Granted Aug 4, 1998·8 cites·4 claims
- 3338US5978259ASemiconductor memory deviceLG SEMICON CO LTD·Filed 1998·Granted Nov 2, 1999·6 cites·18 claims
- 3438US2002024102A1Retrograde doping profile in twin well CMOS deviceHYUNDAI ELECTRONICS IND·Filed 2001·Application pending·0 cites
- 3536US6069056AMethod of forming isolation structureLG SEMICON CO LTD·Filed 1997·Granted May 30, 2000·5 cites·21 claims
- 3636US5923057ABipolar semiconductor device and method for fabricating the sameLG SEMICON CO LTD·Filed 1997·Granted Jul 13, 1999·4 cites·27 claims
- 3736US2020171115A1Composition for preventing or treating visceral fat obesity containing extract of salvia miltiorrhiza radixHUEN CO LTD·Filed 2018·Application pending·0 cites
- 3835US7091094B2Method of making a semiconductor device having a gate electrode with an hourglass shapeHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 15, 2006·0 cites·4 claims
- 3935US6541341B1Method for fabricating MOS field effect transistorHYUNDAI ELECTRONICS IND·Filed 1996·Granted Apr 1, 2003·4 cites·15 claims
- 4030US6482712B1Method for fabricating a bipolar semiconductor deviceLG SEMICON CO LTD·Filed 1999·Granted Nov 19, 2002·0 cites·14 claims
- 4130US6358805B2Method of making a SOI device having fixed channel threshold voltageLG SEMICON CO LTD·Filed 1998·Granted Mar 19, 2002·3 cites·15 claims
- 4230US6225682B1Semiconductor memory device having isolation structure and method of fabricating the sameHYUNDAI ELECTRONICS IND·Filed 1998·Granted May 1, 2001·0 cites·19 claims
- 4330US2001016393A1Mosfet having doped regions with different impurity concentrationFiled 1999·Application pending·0 cites
- 4429US5877068AMethod for forming isolating layer in semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Mar 2, 1999·1 cites·19 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →