Inventor · disambiguated record
Masayoshi Yoshimura
Also filed as: YOSHIMURA MASAYOSHI
20 granted patents·1 pending application·243 citations·filing 1975–2007
95Inventor score
Top patents by PatentIndex Score
21 records- 0189US6734549B2Semiconductor device having a device for testing the semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 11, 2004·39 cites·16 claims
- 0280US4689503ALevel conversion circuitry for a semiconductor integrated circuit utilizing bis CMOS circuit elementsHITACHI LTD·Filed 1984·Granted Aug 25, 1987·16 cites·42 claims
- 0378US3990092AResistance element for semiconductor integrated circuitHITACHI LTD·Filed 1975·Granted Nov 2, 1976·22 cites·10 claims
- 0475US7032196B2Semiconductor wiring substrate, semiconductor device, method for testing semiconductor device, and method for mounting semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 18, 2006·15 cites·6 claims
- 0574US4095253ASingle in-line high power resin-packaged semiconductor device having an improved heat dissipatorHITACHI LTD·Filed 1976·Granted Jun 13, 1978·33 cites·17 claims
- 0669US4056413AEtching method for flattening a silicon substrate utilizing an anisotropic alkali etchantHITACHI LTD·Filed 1976·Granted Nov 1, 1977·26 cites·10 claims
- 0766US7197725B2Semiconductor integrated circuit and testing method for the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 27, 2007·13 cites·19 claims
- 0866US4021687ATransistor circuit for deep saturation preventionHITACHI LTD·Filed 1975·Granted May 3, 1977·14 cites·8 claims
- 0962US5245224ALevel conversion circuitry for a semiconductor integrated circuitHITACHI LTD·Filed 1992·Granted Sep 14, 1993·17 cites·19 claims
- 1058US4423433AHigh-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodesHITACHI LTD·Filed 1980·Granted Dec 27, 1983·15 cites·11 claims
- 1155US7348595B2Semiconductor wiring substrate, semiconductor device, method for testing semiconductor device, and method for mounting semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 25, 2008·4 cites·6 claims
- 1255US7171600B2Semiconductor wiring substrate, semiconductor device, method for testing semiconductor device, and method for mounting semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 30, 2007·4 cites·4 claims
- 1353US6708315B2Method of design for testability, method of design for integrated circuits and integrated circuitsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 16, 2004·6 cites·22 claims
- 1449US4983862ASemiconductor integrated circuit with a bi-MOS input circuit for providing input signals to an internal logic blockHITACHI LTD·Filed 1989·Granted Jan 8, 1991·5 cites·62 claims
- 1543US4879480ABicmos gate arrayHITACHI LTD·Filed 1988·Granted Nov 7, 1989·4 cites·19 claims
- 1639US2007250284A1Semiconductor integrated circuit and testing method for the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 1736US5103120ALevel conversion circuitry for a semiconductor integrated circuitHITACHI LTD·Filed 1991·Granted Apr 7, 1992·2 cites·14 claims
- 1833US4024568ATransistor with base/emitter encirclement configurationHITACHI LTD·Filed 1975·Granted May 17, 1977·4 cites·4 claims
- 1931US4443812AHigh-breakdown-voltage semiconductor deviceHITACHI LTD·Filed 1981·Granted Apr 17, 1984·2 cites·4 claims
- 2030US5512847ABiCMOS tri-state output driverHITACHI LTD·Filed 1994·Granted Apr 30, 1996·0 cites·28 claims
- 2129US5495183ALevel conversion circuitry for a semiconductor integrated circuitHITACHI LTD·Filed 1995·Granted Feb 27, 1996·2 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →