Inventor · disambiguated record
Hsiang-Ting Hung
Also filed as: HUNG HSIANG-TING
8 granted patents·3 pending applications·8 citations·filing 2015–2024
76Inventor score
Top patents by PatentIndex Score
11 records- 0187US11489521B2Power transistor module and controlling method thereofFast SiC Semiconductor Incorporated·Filed 2021·Granted Nov 1, 2022·2 cites·23 claims
- 0281US9373713B2Silicon carbide semiconductor device and method of manufacture thereofHESTIA POWER INC·Filed 2015·Granted Jun 21, 2016·4 cites·19 claims
- 0374US10020368B2Silicon carbide semiconductor element and manufacturing method thereofHESTIA POWER INC·Filed 2016·Granted Jul 10, 2018·2 cites·15 claims
- 0464US12261594B2Cascode diode circuitFast SiC Semiconductor Incorporated·Filed 2023·Granted Mar 25, 2025·0 cites·9 claims
- 0558US12419089B2Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2023·Granted Sep 16, 2025·0 cites·15 claims
- 0658US2024347599A1Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2024·Application pending·0 cites
- 0755US2024234569A9silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2023·Application pending·0 cites
- 0854US12495576B2Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2023·Granted Dec 9, 2025·0 cites·12 claims
- 0950US2023307507A1Silicon carbide semiconductor deviceFast SiC Semiconductor Incorporated·Filed 2022·Application pending·0 cites
- 1049US11190181B2Power transistor module and controlling method thereofFast SiC Semiconductor Incorporated·Filed 2021·Granted Nov 30, 2021·0 cites·14 claims
- 1137US9685552B2Silicon carbide field effect transistorHESTIA POWER INC·Filed 2015·Granted Jun 20, 2017·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →