Inventor · disambiguated record
Matthias Stecher
Also filed as: STECHER MATTHIAS
63 granted patents·5 pending applications·458 citations·filing 1998–2025
98Inventor score
Files withINFINEON TECHNOLOGIES AG35STECHER MATTHIAS9INFINEON TECHNOLOGIES AUSTRIA AG8INFINEON TECHNOLOGIES AUSTRIA4SIEMENS AG4
Top patents by PatentIndex Score
68 records- 0199US8569842B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesWEIS ROLF·Filed 2011·Granted Oct 29, 2013·83 cites·30 claims
- 0297US8970262B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesWEIS ROLF·Filed 2012·Granted Mar 3, 2015·28 cites·25 claims
- 0395US9705026B2Method of triggering avalanche breakdown in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 11, 2017·16 cites·6 claims
- 0488US9214424B2Method for producing a conductor lineSTECHER MATTHIAS·Filed 2012·Granted Dec 15, 2015·13 cites·22 claims
- 0588US8093677B2Semiconductor device and manufacturing methodSTECHER MATTHIAS·Filed 2009·Granted Jan 10, 2012·11 cites·17 claims
- 0685US8076238B2Electronic device and method for productionHOSSEINI KHALIL·Filed 2007·Granted Dec 13, 2011·9 cites·14 claims
- 0785US7626262B2Electrically conductive connection, electronic component and method for their productionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 1, 2009·13 cites·12 claims
- 0883US8749018B2Integrated semiconductor device having an insulating structure and a manufacturing methodSTECHER MATTHIAS·Filed 2010·Granted Jun 10, 2014·7 cites·20 claims
- 0983US7859082B2Lateral bipolar transistor and method of productionINFINEON TECHNOLOGIES AG·Filed 2007·Granted Dec 28, 2010·10 cites·20 claims
- 1081US10002830B2Semiconductor device with multi-layer metallizationINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 19, 2018·2 cites·17 claims
- 1181US9953968B2Integrated circuit having an ESD protection structure and photon sourceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 24, 2018·4 cites·25 claims
- 1279US6194764B1Integrated semiconductor circuit with protection structure for protecting against electrostatic dischargeINFINEON TECHNOLOGIES AG·Filed 1998·Granted Feb 27, 2001·49 cites·20 claims
- 1378US8552571B2Electronic device and method for productionHOSSEINI KHALIL·Filed 2011·Granted Oct 8, 2013·3 cites·14 claims
- 1477US7808067B2Semiconductor device and temperature sensor structure for a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 5, 2010·7 cites·26 claims
- 1577US7709938B2Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 4, 2010·7 cites·5 claims
- 1677US6146976AMethod for producing bridged doped zonesINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 14, 2000·35 cites·14 claims
- 1776US9048019B2Semiconductor structure including guard ringINFINEON TECHNOLOGIES AG·Filed 2012·Granted Jun 2, 2015·3 cites·36 claims
- 1876US8138575B2Integrated circuit including a reverse current complexSTECHER MATTHIAS·Filed 2007·Granted Mar 20, 2012·6 cites·9 claims
- 1976US6320232B1Integrated semiconductor circuit with protective structure for protection against electrostatic dischargeINFINEON TECHNOLOGIES AG·Filed 1998·Granted Nov 20, 2001·39 cites·11 claims
- 2075US7528010B2Semiconductor component and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2007·Granted May 5, 2009·5 cites·10 claims
- 2174US6873012B2SOI componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 29, 2005·19 cites·13 claims
- 2273US7851913B2Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apartINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 14, 2010·6 cites·37 claims
- 2371US8330269B2Semiconductor device and methodSTECHER MATTHIAS·Filed 2011·Granted Dec 11, 2012·3 cites·21 claims
- 2471US7737560B2Metallization layer for a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 15, 2010·6 cites·7 claims
- 2571US6525383B1Power MOSFETSIEMENS AG·Filed 1998·Granted Feb 25, 2003·32 cites·6 claims
- 2669US9972619B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted May 15, 2018·1 cites·19 claims
- 2769US8021929B2Apparatus and method configured to lower thermal stressesINFINEON TECHNOLOGIES AG·Filed 2010·Granted Sep 20, 2011·2 cites·14 claims
- 2869US7781828B2Integrated semiconductor chip with lateral thermal insulationINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 24, 2010·4 cites·25 claims
- 2968US9263619B2Semiconductor component and method of triggering avalanche breakdownINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 16, 2016·2 cites·14 claims
- 3068US7888782B2Apparatus and method configured to lower thermal stressesINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 15, 2011·3 cites·21 claims
- 3164US7888794B2Semiconductor device and methodINFINEON TECHNOLOGIES AG·Filed 2008·Granted Feb 15, 2011·3 cites·24 claims
- 3261US11222812B2Semiconductor device with multi-layer metallizationINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 11, 2022·0 cites·15 claims
- 3360US8169063B2Semiconductor component and method for producing the sameOTREMBA RALF·Filed 2009·Granted May 1, 2012·1 cites·19 claims
- 3459US8665054B2Semiconductor component with coreless transformerSTECHER MATTHIAS·Filed 2012·Granted Mar 4, 2014·1 cites·30 claims
- 3557US10347580B2Semiconductor component comprising copper metallizationsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Jul 9, 2019·0 cites·7 claims
- 3657US9754912B2Electronic device and method for productionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 3757US9368447B2Electronic device and method for productionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 14, 2016·0 cites·22 claims
- 3857US8509269B2Method for producing a cylindrical optical component of quartz glass and optically active component obtained by said methodBAUER PETER·Filed 2009·Granted Aug 13, 2013·1 cites·18 claims
- 3955US8736070B2Semiconductor component comprising copper metallizationsINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 27, 2014·0 cites·14 claims
- 4055US2009079080A1Semiconductor Device with Multi-Layer MetallizationINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 4154US11754640B2Device comprising two voltage domains and methodINFINEON TECHNOLOGIES AG·Filed 2021·Granted Sep 12, 2023·0 cites·18 claims
- 4254US2025308768A1Coupler arrangementINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 4353US9257448B2Integrated semiconductor device having an insulating structure and a manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 9, 2016·0 cites·10 claims
- 4453US2009085215A1Semiconductor component comprising copper metallizationsSTECHER MATTHIAS·Filed 2008·Application pending·0 cites
- 4552US9431382B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 30, 2016·0 cites·26 claims
- 4651US10199491B2Vertical transistor with improved robustnessINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 5, 2019·0 cites·20 claims
- 4751US6043531AMethod for producing bridged, doped zonesSIEMENS AG·Filed 1998·Granted Mar 28, 2000·11 cites·8 claims
- 4850US9466677B2Semiconductor structure including guard ringINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 11, 2016·0 cites·20 claims
- 4950US8183125B2Semiconductor device and manufacturing methodSTECHER MATTHIAS·Filed 2011·Granted May 22, 2012·0 cites·8 claims
- 5049US8569865B2Integrated circuit and production methodSTECHER MATTHIAS·Filed 2012·Granted Oct 29, 2013·0 cites·18 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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