Inventor · disambiguated record
Naein Lee
Also filed as: LEE NAEIN
25 granted patents·4 pending applications·69 citations·filing 2010–2018
94Inventor score
Top patents by PatentIndex Score
29 records- 0192US10199325B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·14 cites·20 claims
- 0289US9929099B2Planarized interlayer dielectric with air gap isolationSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 27, 2018·7 cites·15 claims
- 0389US9842803B2Semiconductor devices including gaps between conductive patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 12, 2017·5 cites·20 claims
- 0488US9524937B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 20, 2016·7 cites·20 claims
- 0586US9252235B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 2, 2016·6 cites·14 claims
- 0681US10192782B2Method of manufacturing semiconductor device using a plurality of etch stop layersLEE WOOJIN·Filed 2015·Granted Jan 29, 2019·4 cites·20 claims
- 0780US9343409B2Semiconductor devices having staggered air gapsRHA SANGHO·Filed 2015·Granted May 17, 2016·3 cites·17 claims
- 0880US8759183B2Methods of forming semiconductor devices using electrolyzed sulfuric acid (ESA)HEO JUNG SHIK·Filed 2012·Granted Jun 24, 2014·9 cites·53 claims
- 0979US9972528B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·3 cites·20 claims
- 1078US10049997B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 14, 2018·3 cites·28 claims
- 1177US9520300B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 13, 2016·2 cites·20 claims
- 1273US9312171B2Semiconductor devices having through-electrodes and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 12, 2016·3 cites·20 claims
- 1369US10438802B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·1 cites·18 claims
- 1467US10109665B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 23, 2018·1 cites·15 claims
- 1566US8937343B2Semiconductor device including transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 20, 2015·1 cites·12 claims
- 1658US9082874B2Semiconductor device including transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 14, 2015·0 cites·8 claims
- 1757US10497647B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 3, 2019·0 cites·20 claims
- 1857US10141258B2Semiconductor devices having staggered air gapsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·11 claims
- 1954US9748170B2Semiconductor devices having staggered air gapsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 29, 2017·0 cites·14 claims
- 2053US9911644B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 6, 2018·0 cites·12 claims
- 2153US9548389B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·0 cites·6 claims
- 2250US10186485B2Planarized interlayer dielectric with air gap isolationSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 22, 2019·0 cites·20 claims
- 2348US9299836B2Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 29, 2016·0 cites·8 claims
- 2448US2014087537A1Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2540US9576848B2Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 21, 2017·0 cites·19 claims
- 2640US2013089961A1Methods of Forming Semiconductor Devices Including an Epitaxial Layer and Semiconductor Devices Formed TherebySHIN GEO MYUNG·Filed 2012·Application pending·0 cites
- 2737US2018108540A1Method of forming an interposer and a method of manufacturing a semiconductor package including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 2833US9953827B2Method of forming semiconductor device having dielectric layer and related systemSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 24, 2018·0 cites·18 claims
- 2928US2010230758A1Semiconductor device with improved stressor shapeCHANG CHONG KWANG·Filed 2010·Application pending·0 cites
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