Inventor · disambiguated record
Alfonso Patti
Also filed as: PATTI ALFONSO
12 granted patents·4 pending applications·21 citations·filing 1989–2025
86Inventor score
Top patents by PatentIndex Score
16 records- 0196US11222969B2Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
- 0284US2025280560A1Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0383US2025280553A1Hemt transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0481US2024178301A1Hemt transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 0579US10522646B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2016·Granted Dec 31, 2019·2 cites·23 claims
- 0676US9882040B2Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobilityST MICROELECTRONICS SRL·Filed 2016·Granted Jan 30, 2018·2 cites·21 claims
- 0775US12457765B2Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2022·Granted Oct 28, 2025·0 cites·18 claims
- 0873US11862707B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 0971US10396192B2HEMT transistors with improved electron mobilityST MICROELECTRONICS SRL·Filed 2018·Granted Aug 27, 2019·1 cites·19 claims
- 1070US10032898B2Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobilityST MICROELECTRONICS SRL·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 1165US11101363B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2019·Granted Aug 24, 2021·0 cites·14 claims
- 1253US2017148906A1Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2016·Application pending·0 cites
- 1338US5032887ABipolar power semiconductor device and process for its manufactureSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Jul 16, 1991·11 cites·7 claims
- 1433US9508846B2Vertical MOS semiconductor device for high-frequency applications, and related manufacturing processST MICROELECTRONICS SRL·Filed 2015·Granted Nov 29, 2016·0 cites·21 claims
- 1525US8759188B2Radiation hardened bipolar injunction transistorPATTI ALFONSO·Filed 2011·Granted Jun 24, 2014·0 cites·24 claims
- 1625US5083182ADarlington device with an ultra-lightweight emitter speed-up transistorSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Jan 21, 1992·0 cites·2 claims
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