Inventor · disambiguated record
Nathaniel Berliner
Also filed as: BERLINER NATHANIEL · BERLINER NATHANIEL C
8 granted patents·1 pending application·41 citations·filing 2009–2018
83Inventor score
Top patents by PatentIndex Score
9 records- 0191US9105559B2Conformal doping for FinFET devicesIBM·Filed 2013·Granted Aug 11, 2015·13 cites·6 claims
- 0289US8900973B2Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusionBERLINER NATHANIEL C·Filed 2011·Granted Dec 2, 2014·14 cites·18 claims
- 0384US8796128B2Dual metal fill and dual threshold voltage for replacement gate metal devicesEDGE LISA F·Filed 2012·Granted Aug 5, 2014·9 cites·13 claims
- 0474US8927422B2Raised silicide contactALPTEKIN EMRE·Filed 2012·Granted Jan 6, 2015·3 cites·19 claims
- 0564US8124427B2Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thicknessBERLINER NATHANIEL C·Filed 2009·Granted Feb 28, 2012·2 cites·20 claims
- 0652US10566416B2Semiconductor device with improved field layerMICROSEMI CORP·Filed 2018·Granted Feb 18, 2020·0 cites·23 claims
- 0750US8940554B2Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thicknessBERLINER NATHANIEL C·Filed 2012·Granted Jan 27, 2015·0 cites·16 claims
- 0849US9018024B2Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thicknessBERLINER NATHANIEL C·Filed 2009·Granted Apr 28, 2015·0 cites·12 claims
- 0949US2014084382A1Dual metal fill and dual threshold voltage for replacement gate metal devicesIBM·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →