Inventor · disambiguated record
Christopher C. Hobbs
Also filed as: HOBBS CHRISTOPHER · HOBBS CHRISTOPHER C · HOBBS CHRISTOPHER M
18 granted patents·2 pending applications·1,954 citations·filing 1997–2015
96Inventor score
Files withMOTOROLA INC13FREESCALE SEMICONDUCTOR INC2GUARDIAN INDUSTRIES1HOBBS CHRISTOPHER C1MAIKOWSKI DAVID P1
Top patents by PatentIndex Score
20 records- 0198US6184072B1Process for forming a high-K gate dielectricMOTOROLA INC·Filed 2000·Granted Feb 6, 2001·224 cites·2 claims
- 0297US6171910B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Jan 9, 2001·271 cites·16 claims
- 0397US6027961ACMOS semiconductor devices and method of formationMOTOROLA INC·Filed 1998·Granted Feb 22, 2000·358 cites·17 claims
- 0496US6432779B1Selective removal of a metal oxide dielectricMOTOROLA INC·Filed 2001·Granted Aug 13, 2002·139 cites·2 claims
- 0595US6514808B1Transistor having a high K dielectric and short gate length and method thereforMOTOROLA INC·Filed 2001·Granted Feb 4, 2003·104 cites·11 claims
- 0694US8183104B2Method for dual-channel nanowire FET deviceHOBBS CHRISTOPHER C·Filed 2010·Granted May 22, 2012·38 cites·15 claims
- 0794US5960270AMethod for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regionsMOTOROLA INC·Filed 1997·Granted Sep 28, 1999·391 cites·43 claims
- 0892US6300202B1Selective removal of a metal oxide dielectricMOTOROLA INC·Filed 2000·Granted Oct 9, 2001·113 cites·20 claims
- 0991US6787421B2Method for forming a dual gate oxide device using a metal oxide and resulting deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 7, 2004·59 cites·19 claims
- 1089US6717226B2Transistor with layered high-K gate dielectric and method thereforMOTOROLA INC·Filed 2002·Granted Apr 6, 2004·52 cites·7 claims
- 1187US6465853B1Method for making semiconductor deviceMOTOROLA INC·Filed 2001·Granted Oct 15, 2002·64 cites·14 claims
- 1286US6004850ATantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formationMOTOROLA INC·Filed 1998·Granted Dec 21, 1999·58 cites·23 claims
- 1383US8939606B2Heatable lens for luminaires, and/or methods of making the sameMAIKOWSKI DAVID P·Filed 2012·Granted Jan 27, 2015·8 cites·27 claims
- 1481US6573160B2Method of recrystallizing an amorphous region of a semiconductorMOTOROLA INC·Filed 2000·Granted Jun 3, 2003·30 cites·21 claims
- 1576US6294820B1Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layerMOTOROLA INC·Filed 1999·Granted Sep 25, 2001·33 cites·8 claims
- 1675US7858482B2Method of forming a semiconductor device using stress memorizationFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Dec 28, 2010·5 cites·15 claims
- 1761US6818493B2Selective metal oxide removal performed in a reaction chamber in the absence of RF activationMOTOROLA INC·Filed 2001·Granted Nov 16, 2004·7 cites·27 claims
- 1854US9725356B2Heatable lens for luminaires, and/or methods of making the sameGUARDIAN INDUSTRIES·Filed 2015·Granted Aug 8, 2017·0 cites·13 claims
- 1936US2003054669A1Amorphous metal oxide gate dielectric structure and method thereofFiled 2002·Application pending·0 cites
- 2033US2005179390A1Compact fluorescent lampTRANSWORLD LIGHTING INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →