Inventor · disambiguated record
Yohei Fujikawa
Also filed as: FUJIKAWA YOHEI
22 granted patents·2 pending applications·7 citations·filing 2017–2020
89Inventor score
Top patents by PatentIndex Score
24 records- 0186US11008670B2Manufacturing method of SiC ingotSHOWA DENKO KK·Filed 2017·Granted May 18, 2021·2 cites·8 claims
- 0284US11453959B2Crystal growth apparatus including heater with multiple regions and crystal growth method thereforSHOWA DENKO KK·Filed 2020·Granted Sep 27, 2022·1 cites·8 claims
- 0384US10995418B2Shielding member and single crystal growth device having the sameSHOWA DENKO KK·Filed 2019·Granted May 4, 2021·1 cites·19 claims
- 0483US11306412B2SiC single crystal manufacturing apparatus and SiC single crystal manufacturing methodSHOWA DENKO KK·Filed 2019·Granted Apr 19, 2022·1 cites·1 claims
- 0578US10837123B2Method of manufacturing SiC ingotSHOWA DENKO KK·Filed 2018·Granted Nov 17, 2020·2 cites·14 claims
- 0668US11427927B2SiC single crystal manufacturing apparatus and structure having container and filler for manufacturing SiC single crystalSHOWA DENKO KK·Filed 2019·Granted Aug 30, 2022·0 cites·9 claims
- 0764US11111599B2Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powderSHOWA DENKO KK·Filed 2019·Granted Sep 7, 2021·0 cites·8 claims
- 0863US11761114B2Method of producing SiC single crystal ingotSHOWA DENKO KK·Filed 2019·Granted Sep 19, 2023·0 cites·7 claims
- 0963US11643749B2Crucible and SiC single crystal growth apparatusSHOWA DENKO KK·Filed 2019·Granted May 9, 2023·0 cites·8 claims
- 1060US11946156B2SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatusSHOWA DENKO KK·Filed 2020·Granted Apr 2, 2024·0 cites·6 claims
- 1159US11454599B2Thermal conductivity measuring device, heating device, thermal conductivity measuring method, and quality assurance methodSHOWA DENKO KK·Filed 2019·Granted Sep 27, 2022·0 cites·16 claims
- 1256US11261541B2Shielding member and apparatus for single crystal growthSHOWA DENKO KK·Filed 2019·Granted Mar 1, 2022·0 cites·20 claims
- 1355US11814749B2Single crystal growth crucible and single crystal growth methodSHOWA DENKO KK·Filed 2019·Granted Nov 14, 2023·0 cites·7 claims
- 1454US11453958B2Heat-insulating shield member and single crystal manufacturing apparatus having the sameSHOWA DENKO KK·Filed 2019·Granted Sep 27, 2022·0 cites·20 claims
- 1553US11326274B2Single crystal growth crucible having a first housing and a second housing, and single crystal production deviceSHOWA DENKO KK·Filed 2020·Granted May 10, 2022·0 cites·6 claims
- 1653US10907272B2Method of manufacturing silicon carbide single crystal ingotSHOWA DENKO KK·Filed 2018·Granted Feb 2, 2021·0 cites·7 claims
- 1751US11905621B2SiC single crystal, method of manufacturing SiC ingot, and method of manufacturing SiC waferRESONAC CORP·Filed 2019·Granted Feb 20, 2024·0 cites·8 claims
- 1850US11618969B2SiC single crystal composite and SiC ingotSHOWA DENKO KK·Filed 2017·Granted Apr 4, 2023·0 cites·1 claims
- 1950US11041257B2Shielding member including a plurality of shielding plates arranged without gaps therebetween in plan view and apparatus for growing single crystalsSHOWA DENKO KK·Filed 2019·Granted Jun 22, 2021·0 cites·14 claims
- 2050US10844517B2Method of processing SiC single crystal and method of manufacturing SiC ingotSHOWA DENKO KK·Filed 2018·Granted Nov 24, 2020·0 cites·20 claims
- 2148US11459669B2SiC ingot and method of manufacturing SiC ingotSHOWA DENKO KK·Filed 2018·Granted Oct 4, 2022·0 cites·20 claims
- 2248US11078598B2Method for producing silicon carbide single crystalSHOWA DENKO KK·Filed 2017·Granted Aug 3, 2021·0 cites·6 claims
- 2348US2021189596A1SiC SINGLE CRYSTAL, METHOD OF MANUFACTURING SiC INGOT, AND METHOD OF MANUFACTURING SiC WAFERSHOWA DENKO KK·Filed 2019·Application pending·0 cites
- 2442US2020020777A1SiC WAFER AND MANUFACTURING METHOD OF SiC WAFERSHOWA DENKO KK·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →