Inventor · disambiguated record
Steve Weiyi Yang
Also filed as: YANG STEVE WEIYI
20 granted patents·4 pending applications·143 citations·filing 2018–2024
94Inventor score
Files withYANGTZE MEMORY TECH CO LTD24
Top patents by PatentIndex Score
24 records- 0198US10147732B1Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 4, 2018·66 cites·21 claims
- 0297US11758732B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 0397US11527547B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0497US10923491B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
- 0597US10593690B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 17, 2020·21 cites·20 claims
- 0695US10930663B2Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 23, 2021·14 cites·12 claims
- 0794US11031333B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·8 cites·19 claims
- 0893US10679721B2Structure and method for testing three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·9 cites·15 claims
- 0992US11211397B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 28, 2021·6 cites·14 claims
- 1088US10998079B2Structure and method for testing three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 4, 2021·2 cites·17 claims
- 1188US2025024683A1Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1284US12137568B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 1382US12137567B2Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 5, 2024·1 cites·20 claims
- 1482US10804279B2Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·4 cites·16 claims
- 1579US2025017019A1Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1677US12142575B2Staircase etch control in forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·18 claims
- 1775US10522474B2Staircase etch control in forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·19 claims
- 1875US2023422504A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1973US11699657B2Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layerYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·17 claims
- 2070US11805646B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 31, 2023·0 cites·21 claims
- 2166US10423176B2Low-dropout regulatorsYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 24, 2019·1 cites·18 claims
- 2262US11462474B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·20 claims
- 2361US2020203285A1Staircase etch control in forming three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 2453US11264397B2Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →